Abstract: A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10?6 h?1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10?5 h?1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.

Abstract: A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10?6 h?1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10?5 h?1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.

Abstract: A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10?6 h?1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10?5 h?1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.

Abstract: A refractory object can include at least 10 wt % Al2O3. Further, the refractory object may contain less than approximately 6 wt % SiO2 or may include a dopant that includes an oxide of Ti, Mg, Ta, Nb, or any combination thereof. In an embodiment, at least approximately 1% of the Al2O3 in the refractory object can be provided as reactive Al2O3. In another embodiment, the refractory object may have a density of at least approximately 3.55 g/cc, a corrosion rate of no greater than approximately 2.69 mm/year, or any combination of the foregoing. In a particular embodiment, the refractory object can be used to form an Al—Si—Mg glass sheet. In an embodiment, the refractory object may be formed by a process using a compound of Ti, Mg, Ta, Nb, or any combination thereof.

Abstract: A refractory object can include at least 10 wt % Al2O3. In an embodiment, the refractory object can further include a dopant including an oxide of a rare earth element, Ta, Nb, Hf, or any combination thereof. In another embodiment, the refractory object may have a property such that the averaged grain size does not increase more than 500% during sintering, an aspect ratio less than approximately 4.0, a creep rate less than approximately 1.0×10?5 ?m/(?m×hr), or any combination thereof. In a particular embodiment, the refractory object can be in the form of a refractory block or a glass overflow forming block. The glass overflow forming block can be useful in forming an Al—Si—Mg glass sheet. In a particular embodiment, a layer including Mg—Al oxide can initially form along exposed surfaces of the glass overflow forming block when forming the Al—Si—Mg glass sheet.

Abstract: A component includes a body including zircon (ZrSiO4) grains, the body having a free silica intergranular phase present between the zircon grains and distributed substantially uniformly through the body. The body comprises a content of free silica not greater than about 2 wt. % for the total weight of the body.

Abstract: A component includes a body including zircon (ZrSiO4) grains, the body having a free silica intergranular phase present between the zircon grains and distributed substantially uniformly through the body. The body comprises a content of free silica not greater than about 2 wt. % for the total weight of the body.

Abstract: A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10?6 h?1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10?5 h?1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.

Abstract: A refractory object can include at least 10 wt % Al2O3. Further, the refractory object may contain less than approximately 6 wt % SiO2 or may include a dopant that includes an oxide of Ti, Mg, Ta, Nb, or any combination thereof. In an embodiment, at least approximately 1% of the Al2O3 in the refractory object can be provided as reactive Al2O3. In another embodiment, the refractory object may have a density of at least approximately 3.55 g/cc, a corrosion rate of no greater than approximately 2.69 mm/year, or any combination of the foregoing. In a particular embodiment, the refractory object can be used to form an Al—Si—Mg glass sheet. In an embodiment, the refractory object may be formed by a process using a compound of Ti, Mg, Ta, Nb, or any combination thereof.

Abstract: A component includes a body including zircon (ZrSiO4) grains, the body having a free silica intergranular phase present between the zircon grains and distributed substantially uniformly through the body. The body comprises a content of free silica not greater than about 2 wt. % for the total weight of the body.

Abstract: A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10?6 h?1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10?5 h?1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.

Abstract: A refractory object can include at least 10 wt % Al2O3. In an embodiment, the refractory object can further include a dopant including an oxide of a rare earth element, Ta, Nb, Hf, or any combination thereof. In another embodiment, the refractory object may have a property such that the averaged grain size does not increase more than 500% during sintering, an aspect ratio less than approximately 4.0, a creep rate less than approximately 1.0×10?5 ?m/(?m×hr), or any combination thereof. In a particular embodiment, the refractory object can be in the form of a refractory block or a glass overflow forming block. The glass overflow forming block can be useful in forming an Al—Si—Mg glass sheet. In a particular embodiment, a layer including Mg—Al oxide can initially form along exposed surfaces of the glass overflow forming block when forming the Al—Si—Mg glass sheet.

Abstract: A component includes a body including zircon (ZrSiO4) grains, the body having a free silica intergranular phase present between the zircon grains and distributed substantially uniformly through the body. The body comprises a content of free silica not greater than about 2 wt. % for the total weight of the body.

Abstract: A refractory object can include at least approximately 10 wt % Al2O3 and at least approximately 1 wt % SiO2. In an embodiment, the refractory object can include an additive. In a particular embodiment, the additive can include TiO2, Y2O3, SrO, BaO, CaO, Ta2O5, Fe2O3, ZnO, or MgO. The refractory object can include at least approximately 3 wt % of the additive. In an additional embodiment, the refractory object can include no greater than approximately 8 wt % of the additive. In a further embodiment, the creep rate of the refractory object can be at least approximately 1×10?6 h?1. In another embodiment, the creep rate of the refractory object can be no greater than approximately 5×10?5 h?1. In an illustrative embodiment, the refractory object can include a glass overflow trough or a forming block.

Abstract: A refractory object can include at least 10 wt % Al2O3. Further, the refractory object may contain less than approximately 6 wt % SiO2 or may include a dopant that includes an oxide of Ti, Mg, Ta, Nb, or any combination thereof. In an embodiment, at least approximately 1% of the Al2O3 in the refractory object can be provided as reactive Al2O3. In another embodiment, the refractory object may have a density of at least approximately 3.55 g/cc, a corrosion rate of no greater than approximately 2.69 mm/year, or any combination of the foregoing. In a particular embodiment, the refractory object can be used to form an Al—Si—Mg glass sheet. In an embodiment, the refractory object may be formed by a process using a compound of Ti, Mg, Ta, Nb, or any combination thereof.