Abstract: The present disclosure is directed a quantum processing element comprising: a semiconductor and a dielectric material forming an interface with the semiconductor; a dopant atom with nuclear spin of quantum number larger than ½ embedded in the semiconductor at a distance from the interface, at least one conductive electrode disposed in a manner such that there is at least a portion of dielectric material between the at least one conductive electrode and the dopant atom. The disclosure is also directed to a method of operating the quantum processing element comprising the steps of: applying a magnetic field to the dopant atom to separate the energies of the spin states associated with the nucleus of the dopant atom; applying a voltage to the at least one conductive electrode to generate an electric field gradient at a nucleus of the dopant atom; and encoding quantum information in the nuclear spin of the nucleus via the applied voltage.

Abstract: This invention concerns a method to switch on and off the exchange interaction J between electron spins bound to donor atoms. The electron spins have the role of ‘qubits’ to carry quantum information, and the exchange interaction J has the role of mediator for two-qubit quantum logic operations. The invention aims at exploiting the existence of a further magnetic interaction, the hyperfine interaction A, between each electron spin and the nuclear spin of the donor atom (301, 302) that binds the electron. The hyperfine interaction A, together with the ability to read out (504) and control the state of the nuclear spins, is used to suppress the effect of the exchange interaction J at all times, except while a quantum logic operation is being performed. In this way, the result of the quantum logic operation is not distorted after the operation has taken place.

Abstract: The present disclosure provides a method of operation of a quantum processing element and an advanced processing apparatus comprising a plurality of quantum processing elements operated in accordance with the method. Embodiments of the methods disclosed allow using the quantum properties of an MOS structure and a donor atom embedded in the semiconductor to implement electron and nuclear spin qubits and provide multi-qubit coupling, including coupling at longer distances facilitated by a resonator.

Abstract: The present disclosure provides a method of operation of a quantum processing element and an advanced processing apparatus comprising a plurality of quantum processing elements operated in accordance with the method. Embodiments of the methods disclosed allow using the quantum properties of an MOS structure and a donor atom embedded in the semiconductor to implement electron and nuclear spin qubits and provide multi-qubit coupling, including coupling at longer distances facilitated by a resonator.

Abstract: This invention concerns a method to switch on and off the exchange interaction J between electron spins bound to donor atoms. The electron spins have the role of ‘qubits’ to carry quantum information, and the exchange interaction J has the role of mediator for two-qubit quantum logic operations. The invention aims at exploiting the existence of a further magnetic interaction, the hyperfine interaction A, between each electron spin and the nuclear spin of the donor atom (301, 302) that binds the electron. The hyperfine interaction A, together with the ability to read out (504) and control the state of the nuclear spins, is used to suppress the effect of the exchange interaction J at all times, except while a quantum logic operation is being performed. In this way, the result of the quantum logic operation is not distorted after the operation has taken place.

Abstract: This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate.

Abstract: This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the ESR line substrate beneath it. A fourth gate in close proximity to a single dopant donor gate atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate.