Abstract: A selector device for a memory cell in a memory array may include a first electrode, and a separator that include a first region of a single-composition layer of a mixed ionic-electronic conduction material with a first concentration of defects; and a second region of a single-composition layer of a transitional metal oxide with a second concentration of defects that is different from the first concentration of defects. The selector device may also include a second electrode, where the separator is between the first electrode and the second electrode.

Abstract: A selector device for a memory cell in a memory array may include a first electrode, and a separator that include a first region of a single-composition layer of a mixed ionic-electronic conduction material with a first concentration of defects; and a second region of a single-composition layer of a transitional metal oxide with a second concentration of defects that is different from the first concentration of defects. The selector device may also include a second electrode, where the separator is between the first electrode and the second electrode.

Abstract: A selector device for a memory cell in a memory array includes a first electrode, a second electrode, and a separator between the first electrode and the second electrode. The separator includes a mixed ionic-electronic conduction material with first ions having a first charge such that the first ions respond to a voltage applied between the first electrode and the second electrode by moving away from the first electrode. The separator is doped near the second electrode with second ions having a second charge that opposes the first charge.