Abstract: A method for applying a protective resist, such as a negative resist, to a prepatterned wafer in which the resist is applied to the previously generated patterns by a distribution system which includes a holder for the wafer, an xy sliding unit with a programming device, and a dispensing device with a syringe.

Abstract: A method for measuring a physical variable in which a structure is put in resonant oscillations and a change in the oscillation frequency of the structure as a result of a change in the physical variable to be measured is detected, and a frequency-analog signal is provided. A structure oscillating with a resonance frequency receives an electrostatic force.

Abstract: A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during plasma etching onto the sidewalls of the laterally defined patterns.

Abstract: A method is proposed for anisotropic etching of micro- and nanofeatures in silicon substrates using independently controlled etching steps and polymer deposition steps which succeed one another alternatingly, the quantity of polymer deposited decreasing in the course of the polymer deposition steps, thus preventing any underetching of the micro- and nanofeatures.

Abstract: Method, apparatus and plasma processing system for anisotropic etching of a substrate using a plasma. A high-frequency alternating electromagnetic field is generated using an inductive coupled plasma source, and a reactive gas or reactive gas mixture is exposed to that high-frequency alternating electromagnetic field in order to generate the plasma. The electrically charged particles of the plasma are accelerated onto the substrate. An aperture having at least one effective surface for electron-ion recombination is inserted between the plasma source and the substrate.

Abstract: A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.

Abstract: A method for detecting the transition between different materials in semiconductor structures during alternating etching and covering steps for anisotropic depthwise etching of defined patterns performed using a plasma. Provision is made for ascertaining, by way of an intensity measurement of at least one specific substance contained in the plasma, the beginning of each etching step by the fact that a characteristic threshold is reached, this also being achievable by way of an external synchronization signal which indicates the beginning and end of each etching step; for then, when the threshold value is reached, starting a delay time which is longer than the course of a first concentration maximum; for a second concentration maximum then to be ascertained after the delay time has elapsed; and for the second concentration maxima of the etching steps to be monitored as to whether they exceed or fall below the predefined value, in order to detect a material transition.

Abstract: A method of producing etched structures in substrates by anisotropic plasma etching, wherein an essentially isotropic etching operation and side wall passivation are performed separately and in alternation, with the substrate being a polymer, a metal or a multicomponent system, and portions of the side wall passivation layer applied during passivation of the side wall are transferred to the exposed side surfaces of the side wall during the subsequent etching operations, so the entire method is anisotropic as a whole.

Abstract: An acceleration sensor, particularly a Coriolis rotation-rate sensor, having a swinging structure that is movably suspended on a substrate (base) and can be deflected due to an acceleration effect, the sensor further having an arrangement for generating a planar swinging movement of the swinging structure, particularly a rotational swinging movement, and an evaluating arrangement for detecting a deflection of the swinging structure that is stipulated by acceleration, particularly for detecting a Coriolis acceleration. The swinging structure (12) is rotatably suspended so as to perform a planar swinging movement, and should perform a planar, rotational swinging movement.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract: A force sensor, especially an acceleration sensor or a pressure sensor, has a structure that vibrates in resonance, and its oscillation frequency is variable due to an acting force which is to be detected. The distance of an operating point of the force sensor from the point of its mechanical instability can be adjusted by applying an electric voltage.

Abstract: A process for structuring a movable element out of a membrane region. A sacrificial layer and a sealing layer are applied to the underside of the membrane region. Following removal of the sacrificial layer, sealing layer forms a limit stop and a seal for the movement of the movable element.

Abstract: In a force sensor, a resonator is mounted by means of a dielectric layer on a bending element. Deformation of the bending element changes the resonant frequency of the resonator.

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract: A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.

Abstract: In a method of producing micromechanical structures on semiconductor components, in particular on the surface of a wafer containing integrated circuits, provision is made for the micromechanical structures to be provided subsequently on a fully processed semiconductor component using process steps which are normally applied in semiconductor component production and are at most slightly modified, but independently of the semiconductor component production process.

Abstract: In a force sensor, a resonator is mounted by means of a dielectric layer on a bending element. Deformation of the bending element changes the resonant frequency of the resonator.

Abstract: A method for manufacturing micro-mechanical components in which a structure is produced on a silicon layer, which is to be undercut in a further step. The silicon is selectively anodized for this undercutting operation. Thus, the method enables the manufacturing of micro-mechanical components that can be integrated together with bipolar circuit elements.

Abstract: A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.

Abstract: A method for anisotropic plasma etching of silicon substrates, a plasma etching apparatus for implementing the method, and an electronic device manufactured according to the method, which method includes the steps of positioning a substrate having a surface to be depleted by etching within a processing chamber and in communication with an electrode; introducing a gas mixture including an etching gas and a passivating gas which are essentially free of chlorine, bromine or iodine into the processing chamber, the etching gas including at least one halogen or halogen compound and the passivating gas including at least one polymer-generating monomer; exciting the gas mixture with electromagnetic radiation effective to produce a plasma containing ions; and applying a voltage to one of the substrate or the electrode to accelerate the ions toward the substrate and provide the ions with an energy ranging from about 1 to about 40 eV, preferably from about 10 to about 30 eV, when the ions impinge on the surface of the s