Abstract: Thermally sensitive at elevated, near melting point temperature, compound semiconductor materials single crystals including Group III-Nitride, other Group III-V, Group II-VI and Group IV-IV are produced by a variety of methods. When produced as single crystal layers by epitaxy methods or is necessary to expose them to elevated temperatures or ion implanted to the non crystalline state, or their electrical or optical properties are modified, large numbers of crystal defects on the atomic or macro scale may be produced, which limit the yield and performance of opto- and electronic devices constructed out of and grown on top of these layers. It is necessary to be able to improve the crystal quality of such materials after being exposed to elevated temperature or ion implanted or modified by the presence of impurities. It is necessary, particularly for opto- and electronic devices that only the surface of such materials is processed, improved and thus the modified surface product. Generally, as shown in FIG.

Abstract: Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.

Abstract: Gallium Nitride layers grown as single crystals by epitaxy such as Hydride Vapor Phase Epitaxy (HVPE) contain large numbers of crystal defects such as hexagonal pits, which limit the yield and performance of opto- and electronic devices. In this method, the Gallium Nitride layer is first coated with an Aluminum layer of approximate thickness of 0.1 microns. Next, Nitrogen is ion implanted through the Aluminum layer so as to occupy mostly the top 0.1 to 0.5 microns of the Gallium Nitride layer. Finally, through a pulsed directed energy beam such as electron or photons, with a fluence of approximately 1 Joule/cm2 the top approximately 0.5 microns are converted to a single crystal with reduced defect density.

Abstract: Disclosed is a metalorganic chemical vapor deposition (MOCVD) process of depositing an indium oxide or an indium/tin oxide film on a substrate using indium alkyl etherate or indium alkyl etherate and organotin compound precursors, respectively.

Abstract: A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.

Abstract: A process for depositing a gallium nitride film on a substrate. A source compound is provided which has the formula:H.sub.3 GaNR.sub.3Each R is independently selected from alkyl groups having from 1 to about 4 carbon atoms. The source compound is conveyed into a deposition chamber containing a substrate. The source compound, maintained in the gaseous phase, decomposes in the deposition chamber and optionally reacts with other materals in the deposition chamber. Gallium nitride is deposited on the substrate as a result.

Abstract: Niobium (V) and tantalum (V) halides are converted to Nb.sub.2 O.sub.5 and Ta.sub.2 O.sub.5 that are free of detectable levels of halide in a two step process. In the first step, the metal halide is reacted with an alcohol and with a replacement species, such as ammonia, which reacts with the halide. This produces a metal alkoxide which is soluble and a halide salt of the replacement species which is insoluble in the alcohol and precipitates. After physically separating the alkoxide in alcohol solution from the precipitate, in a second step, the metal alkoxide is hydrolyzed with purified water to produce the oxide.

Abstract: Adduct of the formula:H.sub.3 GaNR.sub.3wherein each R is independently selected from lower alkyl having from 2 to about 4 carbon atoms, and a process for depositing gallium nitride, gallium arsenide, or gallium phosphide films, using the above adduct as a source of nitride (for the nitride film) and gallium. Arsenic and phosphorus compounds are also added for depositing gallium compounds of those elements. The process can also be performed using the analogous trimethylamine adduct.

Abstract: Organometallic compounds having the formulas: ##STR1## wherein N is selected from phosphorus and arsenic, H is hydride, and X and Y are independently selected from hydride, lower alkyl cyclopentadienyl, and phenyl, except that Y cannot be hydrogen; andMR.sub.xwherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl-substituted cyclopentadienyl, and M is selected from elements of Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table, except carbon, nitrogen, oxygen, and sulfur. The use of these compounds in chemical vapor deposition processes and methods for synthesizing these compounds are also disclosed.

Abstract: Compounds having the molecular formula:MR.sub.xwherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituents are different, and M is an element selected from Groups 2B or 3A of the Periodic Table, Bismuth, Selenium, Tellurium, Beryllium, and Magnesium, but excluding Aluminum, Bismuth, Selenium, and Tellurium if any R is hydride. The hybrid compound is used for metal organic chemical vapor deposition. The invention also includes a metal organic chemical vapor deposition process employing a hybrid of first and second compounds having the above formula, but wherein the R substituents of each compound can be like or unlike and M is selected from Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table except for Carbon, Nitrogen, Oxygen, and Sulfur.

Abstract: An all welded square bottomed stainless steel cylinder and dip tube device for transferring by vapor deposition very reactive electronic grade organometallic liquid to a deposition system includes a top fill opening and inlet and outlet diaphragm valves, and is coated on the interior with PVF Teflon to several thousandths of an inch thickness. Contamination of the liquid is eliminated or at least substantially minimized since the device is stable in an upright position, the diaphragm valves each have a very small and inert area exposed to the liquid, and the coating serves as a barrier to contamination of the liquid by the metal of which the cylinder and dip tube are made.