Abstract: A multi-beam charged particle inspection system and a method of operating a multi-beam charged particle inspection system for wafer inspection can provide high throughput with high resolution and high reliability. The method and the multi-beam charged particle beam inspection system can be configured to extract from a plurality of sensor data a set of control signals to control the multi-beam charged particle beam inspection system and thereby maintain the imaging specifications including a movement of a wafer stage during the wafer inspection task.

Abstract: The invention relates to a moulded article (3) comprising a basic material (1), wherein the basic material (1) contains a wax, and also a filler, wherein the filler comprises or consists of a mineral filler and/or a fibrous material, wherein the wax is contained in the basic material (1) with a content of between 3% by weight and 60% by weight, wherein the filler is contained in the basic material (1) with a content of between 40% by weight and 97% by weight, wherein the moulded article (3) comprises a moulded element (2), and wherein the moulded element (2) comprises or consists of a fibrous material. The invention also relates to a process for producing a moulded article (3).

Abstract: A multi-beam charged particle microscope and a method of operating a multi-beam charged particle microscope for wafer inspection with high throughput and with high resolution and high reliability are provided. The method of operation and the multi-beam charged particle beam microscope comprises a mechanism for a synchronized scanning operation and image acquisition by a plurality of charged particle beamlets according a selected scan program, wherein the selected scan program can be selected according an inspection task from different scan programs.

Abstract: An ion beam system comprises a voltage supply system 7 and at least one beam deflector 39 having at least one first deflection electrode 51a, 51b, 51c and plural second deflection electrodes 52a, 52b, 52c, wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

Abstract: An ion beam system comprises a voltage supply system 7 and at least one beam deflector 39 having at least one first deflection electrode 51a, 51b, 51c and plural second deflection electrodes 52a, 52b, 52c, wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

Abstract: An ion beam system comprises a voltage supply system 7 and at least one beam deflector 39 having a plurality of first defection electrodes 51a, 51b, 51c and a plurality of second deflection electrodes 52a, 52b, 52c wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plurality of second deflection electrodes such that electric deflection fields between the plurality of second deflection electrodes and the plurality of opposite first deflection electrodes have a common orientation. The ion beam system has a high kinetic energy mode in which a distribution of the electric deflection fields has a greater width, and a low kinetic energy mode in which a distribution of the electric deflection fields has a smaller width.

Abstract: A method for producing a representation of an object using a particle beam, as well as a particle beam device for carrying out the method are disclosed. The system described herein is based on the object of specifying the method and the particle beam device for producing a representation of an object such that images which are produced, in particular including FFT images, are as free as possible of artifacts which are not caused by the object to be examined. This is achieved in particular in that pixel lives, line flyback times and pixel pause times are varied in raster patterns.

Abstract: A method for producing a representation of an object using a particle beam, as well as a particle beam device for carrying out the method are disclosed. The system described herein is based on the object of specifying the method and the particle beam device for producing a representation of an object such that images which are produced, in particular including FFT images, are as free as possible of artifacts which are not caused by the object to be examined. This is achieved in particular in that pixel lives, line flyback times and pixel pause times are varied in raster patterns.

Abstract: An ion beam system comprises a voltage supply system 7 and at least one beam deflector 39 having at least one first deflection electrode 51a, 51b, 51c and plural second deflection electrodes 52a, 52b, 52c, wherein the voltage supply system is configured to supply different adjustable deflection voltages to the plural second deflection electrodes such that electric deflection fields between the plural second deflection electrodes and the opposite at least one first deflection electrode have a common orientation. The system has a high kinetic energy mode in which a distribution of the electric deflection field has a greater width, a low kinetic energy mode in which a distribution of the electric deflection field has a smaller width.

Abstract: A method for producing a representation of an object using a particle beam, as well as a particle beam device for carrying out the method are disclosed. The system described herein is based on the object of specifying the method and the particle beam device for producing a representation of an object such that images which are produced, in particular including FFT images, are as free as possible of artifacts which are not caused by the object to be examined. This is achieved in particular in that pixel lives, line flyback times and pixel pause times are varied in raster patterns.