Abstract: A regulated charge pump includes a comparator having a first input coupled to an output of the regulated charge pump, a second input configured for receiving a reference voltage, and an output for generating an output voltage representing a difference between a charging current of the regulated charge pump and a load current of a load coupled to the output of the regulated charge pump; a first converter having an input coupled to the output of the comparator, and an output connected to a control bus configured to indicate an adjustment of the charging current in response to the comparator output; and a driving stage having a first input coupled to the control bus, and an output for providing the charging current, wherein the output of the driving stage comprises the output of the regulated charge pump.

Abstract: A method includes detecting a voltage at a configuration terminal of a mobile industry processor interface (MIPI) radio frequency front end (RFFE) device with a timing based on a MIPI RFFE signal received by the MIPI RFFE device, and setting an address for the MIPI RFFE device based on the detected voltage.

Abstract: A regulated charge pump includes a comparator having a first input coupled to an output of the regulated charge pump, a second input configured for receiving a reference voltage, and an output for generating an output voltage representing a difference between a charging current of the regulated charge pump and a load current of a load coupled to the output of the regulated charge pump; a first converter having an input coupled to the output of the comparator, and an output connected to a control bus configured to indicate an adjustment of the charging current in response to the comparator output; and a driving stage having a first input coupled to the control bus, and an output for providing the charging current, wherein the output of the driving stage comprises the output of the regulated charge pump.

Abstract: A circuit includes a switch coupled between a configuration terminal and an internal node. In a method of operation, the configuration terminal of the circuit is coupled to an internal node during a configuration phase and decoupled from the internal node during normal operation.

Abstract: A method includes detecting a voltage at a configuration terminal of a mobile industry processor interface (MIPI) radio frequency front end (RFFE) device with a timing based on a MIPI RFFE signal received by the MIPI RFFE device, and setting an address for the MIPI RFFE device based on the detected voltage.

Abstract: A circuit includes a switch coupled between a configuration terminal and an internal node. In a method of operation, the configuration terminal of the circuit is coupled to an internal node during a configuration phase and decoupled from the internal node during normal operation.

Abstract: In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

Abstract: In accordance with an embodiment, a circuit includes: a replica input transistor, a first replica cascode transistor, an active current source, and an active cascode biasing circuit. The active current source is configured to set a current flowing through the first replica cascode transistor and the replica input transistor to a predetermined value by adjusting a voltage of a control node of the replica input transistor; and an active cascode biasing circuit including a first output coupled to the control node of the first replica cascode transistor, and the active cascode biasing circuit configured to set a drain voltage of the replica input transistor to a predetermined voltage by adjusting a voltage of the control node of the first replica cascode transistor.

Abstract: A delta-sigma modulator for a switching amplifier, which achieves a high signal-to-noise ratio (SNR) in the multi-MHz range and keeps the noise-transfer function over the useful frequency range as low and as flat as possible. A series connection of a parallel-serial converter and a downstream swap element for the serial output signal ya2 of the parallel serial converter is connected to the multi-bit output of the delta-sigma-modulator. The swap element swaps, based on the last bit value 0 or 1 of a preceding word in the resulting output signal ya3, the sequence of the binary zeroes and ones of the current word, where present, and then an input signal is fed to the delta-sigma-modulator. The signal is capable of having a frequency range above 25 kHz, and is prepared with a low oversampling ratio and a high SNR. And, 1-0 or 0-1 transitions are largely eliminated at the word boundaries.

Abstract: A means of attachment for electrically contacting electronic components is disclosed. The means of attachment includes a carrier element and a number of elongated connecting elements. Each of the connecting elements is arranged on the carrier element and has an elongated body, which protrudes from the carrier element. Each of the connecting elements and the carrier element includes an electrically conductive surface.

Abstract: Storage element for permanently storing information in a memory device. A coupling circuit is configured to couple a first and a second fuse in parallel with a programming line. A programming unit to control the coupling circuit depending on a common write data to successively couple the first and the second fuse via the programming line with a programming potential.

Abstract: In a method for monitoring layout changes for semiconductor chips, a first group of error data is generated by comparing a first layout with wiring and layout rules. A second group of error data is generated by comparing a second layout with the wiring and layout rules, the second layout being generated from layout changes of the first layout. The first group of error data is compared to the second group of error data and only error data that are different in the first and second groups is output for evaluation.

Abstract: A means of attachment for electrically contacting electronic components is disclosed. The means of attachment includes a carrier element and a number of elongated connecting elements. Each of the connecting elements is arranged on the carrier element and has an elongated body, which protrudes from the carrier element. Each of the connecting elements and the carrier element includes an electrically conductive surface.

Abstract: In a method for monitoring layout changes for semiconductor chips, a first group of error data is generated by comparing a first layout with wiring and layout rules. A second group of error data is generated by comparing a second layout with the wiring and layout rules, the second layout being generated from layout changes of the first layout. The first group of error data is compared to the second group of error data and only error data that are different in the first and second groups is output for evaluation.

Abstract: An increased number of fuses per area are provided in this semiconductor device while complying with the predetermined distance between the fuses. The device having a first patterned, conductive interconnect plane on a passivated substrate; a second patterned, conductive interconnect plane on the first patterned, conductive passivated interconnect plane; contact devices for selectively electrically contact-connecting the patterned, conductive interconnect planes to one another; a fuse device in a nonpassivated section of the second patterned, conductive interconnect plane with predetermined fuse regions for selectively linking interconnects; the fuse device being divided into fuse modules with fuse pairs and the fuse regions thereof at a predetermined distance from one another, which can be linked to a predetermined potential via a central interconnect.

Abstract: A plurality of digital-analog converters and analog-digital converters are connected in the data lines between the connection contacts and the memory cells of a memory device. The memory can be read, written to and actuated by analog data transfers instead of the previous digital signals. The same volume of data, for which a plurality of connection contact areas were normally required, can thus be read via just one connection contact. Addressing the memory cells requires no more than respective contact areas for the analog row address and the analog column address, which are converted into digital addresses using analog-digital converters.

Abstract: The invention relates to two methods for reading and two methods for storing data, and also to an apparatus for compressing data and decompressing data which are provided for storage by a computer system 51 on a bulk memory 60 of the random access type, which computer system provides the data for storage on a bulk memory on the basis of the rules of a file system, where the data are organized in data blocks, where the data blocks contain organization information for managing the data blocks and contain the user information which is to be stored, where cohesive user information areas can be distributed over a plurality of data blocks which are then concatenated to one another using their organization information.

Abstract: A plurality of digital-analog converters and analog-digital converters are connected in the data lines between the connection contacts and the memory cells of a memory device. The memory can be read, written to and actuated by analog data transfers instead of the previous digital signals. The same volume of data, for which a plurality of connection contact areas were normally required, can thus be read via just one connection contact. Addressing the memory cells requires no more than respective contact areas for the analog row address and the analog column address, which are converted into digital addresses using analog-digital converters.

Abstract: A data memory for storing data, having a memory cell array (2), which comprises a large number of memory cells (3), each of which can be addressed by means of a memory cell select transistor (4) connected to a word line (9) and to a bit line (13) and which have a storage capacity for storing one data bit, the memory cell array (2) containing redundant memory cells (3′), which are provided in order to replace memory cells (3) which have been produced wrongly, by means of readdressing, and having read amplifiers (22), which are in each case provided for the signal amplification of a data bit read from an addressed memory cell (3) via an associated bit line (13) and are supplied with a buffered supply voltage, the redundant memory cells (3′) which have not been readdressed being connected to the associated bit lines (13′) and additionally buffering the supply voltage for the read amplifiers (22).

Abstract: A method for fabricating a field-effect transistor situated within an integrated semiconductor circuit. At least two gate regions each extending between a source region and a drain region and are disposed such that they lie one above the other in a thickness direction of a substrate, thereby reducing the space requirement of the hitherto customary larger field-effect transistors in integrated semiconductor circuits.