Abstract: Electrical connectors with integrated touch protection are described. An example electrical connector has a conductor element, a fastening element that contacts the conductor element, a contact ring, an annular collar, and a protective sleeve. The protective sleeve fixed to the contact ring and partially covering the fastening element. The annular collar surrounding the contact ring. The annular collar and the protective sleeve form a touch protection that prevents unintentional contact of the contact ring and the fastening element.

Abstract: An electrical connector includes a housing that has a housing first end, a housing second end, and a housing main body that defines a recess, a recess base, a projection, a projection end, and a plurality of terminal passageways. The recess extends from the housing first end toward the housing second end and to the recess base. The projection extends from the recess base toward the housing first end and to the projection end. Each terminal passageway of the plurality of terminal passageways has an inner wall. The inner wall has an inner wall first end, an inner wall second end, and an inner wall length that extends from the inner wall first end to the inner wall second end. The inner wall tapers along a portion of the inner wall length.

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

Abstract: An electrical data connector includes a socket having a socket body that defines a plug connector cavity and electrically conductive shields within the cavity. A plug connector has a plug body telescopically slid into the plug connector cavity. The plug body has an insert cavity and adjacent spring openings, each of the spring openings aligning with a respective one of the shields. A cable head has an insert module telescopically slid into the insert cavity. The cable head includes an electrically conductive fixation element that is fixed to the insert module and fixed to a cable. The fixation element includes integral spring elements that extend generally radially outwardly from the insert module and are each configured to extend through respective spring openings into contact with respective shields.

Abstract: A power semiconductor device includes a semiconductor body and a first terminal at the semiconductor body. The first terminal has a first side for adjoining an encapsulation and a second side for adjoining the semiconductor body. The first terminal includes, at the first side, a top layer; and, at the second side, a base layer coupled with the top layer, wherein a sidewall of the top layer and/or a sidewall of the base layer is arranged in an angle smaller than 85° with respect to a plane.

Abstract: A semiconductor device and a method of producing the semiconductor device are described. The semiconductor device includes: a semiconductor substrate; a metallization layer over the semiconductor substrate; a plating over the metallization layer, the plating including NiP; a passivation over the metallization layer and laterally adjacent the plating such that a surface of the plating that faces away from the semiconductor substrate is uncovered by the passivation, wherein a seam is present along an interface between the passivation and the plating; and a structure that covers the seam along a periphery of the plating and delimits a bondable area for the plating. The structure extends from the periphery of the plating onto the passivation. The structure includes an imide having a curing temperature below a recrystallization temperature of the NiP or an oxide having a deposition temperature below the recrystallization temperature of the NiP.

Abstract: Described herein are a method and a power semiconductor device produced by the method. The power semiconductor device includes: transistor device structures formed in a semiconductor substrate; a structured metallization layer above the semiconductor substrate; a first passivation over the structured metallization layer; a second passivation on the first passivation; an opening in the first passivation and the second passivation such that a first part of the structured metallization layer has a contact region uncovered by the first passivation and the second passivation and a peripheral region laterally surrounding the contact region and covered by the first passivation and the second passivation; a plating that covers the contact region but not the peripheral region of the first part of the structured metallization layer; and a protective layer separating the peripheral region of the first part of the structured metallization layer from the first passivation.

Abstract: A semiconductor device includes a semiconductor substrate having a first main surface and a metal structure above the first main surface. The metal structure has a periphery region that includes a transition section along which the metal structure transitions from a first thickness to a second thickness less than the first thickness. A polymer-based insulating material contacts and covers at least the periphery region of the metal structure. A thickness of the polymer-based insulating material begins to increase on a first main surface of the metal structure that faces away from the semiconductor substrate and continues to increase in a direction towards the transition section. An average slope of a surface of the polymer-based insulating material which faces away from the semiconductor substrate, as measured with respect to the first main surface of the metal structure, is less than 60 degrees along the periphery region of the metal structure.

Abstract: Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

Abstract: An electrical connector includes a housing that has a housing first end, a housing second end, and a housing main body that defines a recess, a recess base, a projection, a projection end, and a plurality of terminal passageways. The recess extends from the housing first end toward the housing second end and to the recess base. The projection extends from the recess base toward the housing first end and to the projection end. Each terminal passageway of the plurality of terminal passageways has an inner wall. The inner wall has an inner wall first end, an inner wall second end, and an inner wall length that extends from the inner wall first end to the inner wall second end. The inner wall tapers along a portion of the inner wall length.

Abstract: An electrical data connector includes a socket having a socket body that defines a plug connector cavity and electrically conductive shields within the cavity. A plug connector has a plug body telescopically slid into the plug connector cavity. The plug body has an insert cavity and adjacent spring openings, each of the spring openings aligning with a respective one of the shields. A cable head has an insert module telescopically slid into the insert cavity. The cable head includes an electrically conductive fixation element that is fixed to the insert module and fixed to a cable. The fixation element includes integral spring elements that extend generally radially outwardly from the insert module and are each configured to extend through respective spring openings into contact with respective shields.

Abstract: Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: Devices and methods are provided where photoresist is applied on a substrate and at least some regions of the photoresist are dried prior to removing a substrate from a substrate support.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.

Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.

Abstract: A power semiconductor device in accordance with various embodiments may include: a semiconductor body; and a passivation layer disposed over at least a portion of the semiconductor body, wherein the passivation layer includes an organic dielectric material having a water uptake of less than or equal to 0.5 wt % in saturation.

Abstract: Devices and methods are provided where photoresist is applied on a substrate and at least some regions of the photoresist are dried prior to removing a substrate from a substrate support.

Abstract: A semiconductor component comprises a semiconductor body with at least one protective trench in the semiconductor body. An insulation layer is situated at least at the bottom of the protective trench. An electrically conductive layer having a thickness D is formed on the insulation layer in the protective trench, wherein the electrically conductive layer only partly fills the protective trench.