Abstract: A voltage glitch detector includes a ring oscillator, a plurality of counters, a combined result circuit, and a result evaluation circuit. The ring oscillator includes a plurality of series-connected stages. An output of a last stage of the ring oscillator is coupled to an input of a first stage of the ring oscillator. Each counter of the plurality of counters has an input coupled to a node located between two stages of the plurality of series-connected stages. The combined result circuit is coupled to each of the plurality of counters. The combined result circuit combines the count values received from each counter of the plurality of counters to provide a combined result. The result evaluation circuit is coupled to compare the combined result with a reference value to determine when a voltage glitch is detected.

Abstract: An integrated circuit for hardware security comprises a voltage glitch detection processing system comprising an oscillator circuit that generates and outputs a local oscillator clock which is a function of a supply voltage; a counter clocked by the oscillator circuit to generate at least one count value; and a capture section that synchronizes the at least one count value into a system clock domain for detecting a voltage glitch in the supply voltage.

Abstract: A voltage glitch detector includes a ring oscillator, a plurality of counters, a combined result circuit, and a result evaluation circuit. The ring oscillator includes a plurality of series-connected stages. An output of a last stage of the ring oscillator is coupled to an input of a first stage of the ring oscillator. Each counter of the plurality of counters has an input coupled to a node located between two stages of the plurality of series-connected stages. The combined result circuit is coupled to each of the plurality of counters. The combined result circuit combines the count values received from each counter of the plurality of counters to provide a combined result. The result evaluation circuit is coupled to compare the combined result with a reference value to determine when a voltage glitch is detected.

Abstract: An integrated circuit for hardware security comprises a voltage glitch detection processing system comprising an oscillator circuit that generates and outputs a local oscillator clock which is a function of a supply voltage; a counter clocked by the oscillator circuit to generate at least one count value; and a capture section that synchronizes the at least one count value into a system clock domain for detecting a voltage glitch in the supply voltage.

Abstract: Embodiments of devices and method for detecting semiconductor substrate thickness are disclosed. In an embodiment, an IC device includes a semiconductor substrate, a charge emitter embedded in the semiconductor substrate and configured to produce an electrical charge in the semiconductor substrate and a charge sensor embedded in the semiconductor substrate and configured to generate a response signal in response to the electrical charge produced in the semiconductor substrate. The magnitude of the response signal depends on the thickness of the semiconductor substrate.

Abstract: Embodiments of devices and method for detecting semiconductor substrate thickness are disclosed. In an embodiment, an IC device includes a semiconductor substrate, a charge emitter embedded in the semiconductor substrate and configured to produce an electrical charge in the semiconductor substrate and a charge sensor embedded in the semiconductor substrate and configured to generate a response signal in response to the electrical charge produced in the semiconductor substrate. The magnitude of the response signal depends on the thickness of the semiconductor substrate.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A resonator has a main resonator body and a secondary resonator structure. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended body.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A resonator comprising a resonator body and actuation electrodes for driving the resonator into a resonant mode, in which the resonator body vibrates parallel to a first axis. The resonator comprises means to apply a voltage to the resonator in a direction perpendicular to the first axis direction. This serves to shift the frequency of resonant modes other than the principal resonant mode, and this allows increased amplitude of output signal from the resonator.

Abstract: A resonator has a main resonator body and a secondary resonator structure. The resonator body has a desired mode of vibration of the resonator alone, and a parasitic mode of vibration, wherein the parasitic mode comprises vibration of the resonator body and the secondary resonator structure as a composite body. In this way, unwanted vibrational modes are quenched by the second suspended body.

Abstract: A magnetoresistive sensor comprising first and second magnetoresistive elements is disclosed. Each magnetoresistive element is coupled at a respective first end to a common ground terminal and comprises one or more magnetoresistive segments, each overlying a corresponding segment of an excitation coil. The resistance of the magnetoresistive segments in each of the first and second magnetoresistive elements is the same and the resistance of the segments of the excitation coil corresponding to the first magnetoresistive element is the same as the resistance of the segments of the excitation coil corresponding to the second magnetoresistive element.

Abstract: Disclosed is a semiconductor device comprising a group 13 nitride heterojunction comprising a first layer having a first bandgap and a second layer having a second bandgap, wherein the first layer is located between a substrate and the second layer; and a Schottky electrode and a first further electrode each conductively coupled to a different area of the heterojunction, said Schottky electrode comprising a central region and an edge region, wherein the element comprises a conductive barrier portion located underneath said edge region only of the Schottky electrode for locally increasing the Schottky barrier of the Schottky electrode. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: An AMR sensor, comprises at least first and second AMR sensor elements to which opposite bias fields are applied. The first and second AMR sensor element outputs are combined to derive a sensor response which is substantially anti-symmetric in the region close to zero external magnetic field. This arrangement shifts the zero detection point of the AMR sensor elements away from a maximum of the response curve, so that sensitivity in proximity to a zero input field is obtained. To overcome the problem that the response is not anti-symmetric, the signals from (at least) two sensor elements are combined.

Abstract: An MR sensor arrangement is integrated with an IC. A metal layer of the IC structure (e.g. CMOS) is patterned to define at least first and second contact regions. Metal connecting plugs are provided below the first and second contact regions of the metal layer for making contact to terminals of the integrated circuit. A magnetoresistive material layer is above the metal layer and separated by a dielectric layer. Second metal connecting plugs extend up from the metal layer to an MR sensor layer. The sensor layer is thus formed over the top of the layers of the IC structure.

Abstract: A method of manufacturing a Bulk Acoustic Wave device by providing an active layer formed of an electro-mechanical transducer material, providing a first electrode on the active layer, defining a first electrode portion of the device, whereby a remaining portion of the device is defined around the first electrode, providing a stop-layer on the first electrode, depositing a first dielectric layer on the resultant structure, and planarizing the first dielectric layer until the stop-layer on the first electrode is exposed.

Abstract: A resonator comprising a resonator body and actuation electrodes for driving the resonator into a resonant mode, in which the resonator body vibrates parallel to a first axis. The resonator comprises means to apply a voltage to the resonator in a direction perpendicular to the first axis direction. This serves to shift the frequency of resonant modes other than the principal resonant mode, and this allows increased amplitude of output signal from the resonator.

Abstract: A microphone has a membrane (20) mounted to vibrate in response to pressure fluctuations, a backplate (30) facing the membrane and being more rigid than the membrane, and circuitry (95) for sensing the vibrations relative to the backplate, the backplate being prestressed and having a geometry such that a response of the backplate to structure borne vibration matches a corresponding response of the membrane. This can help reduce or minimize relative movement between these surfaces caused by structure borne vibration and hence improve the signal-to-noise ratio of the microphone. The geometry can be a hub and spoke arrangement.

Abstract: A device has an electroacoustic interface between interfaces for balanced electrical signals and unbalanced electrical signals (i.e. a balun) includes a film of piezoelectric material having a first and second pair of electrodes on a first surface a common electrode, with at least partial overlaps with all of the electrodes of the first and second pair, on a second surface. The interfaces between the electrodes in the first and second pair have geometrically identical shapes. Piezoelectrically polarized regions are provided in the film at the overlaps of the electrodes with the electrode arrangement. The direction of polarization components of the regions in the overlaps with the first electrode and the second electrode in the first pair are equal to each other. To provide for balun coupling, the directions of the polarization components in the overlaps with the first electrode and the second electrode in the second pair are mutually opposite.