Patents by Inventor Andreas Bertz

Andreas Bertz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8652341
    Abstract: A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.
    Type: Grant
    Filed: April 30, 2009
    Date of Patent: February 18, 2014
    Assignee: FHR Anlagenbau GmbH
    Inventors: Thomas Gessner, Andreas Bertz, Reinhard Schubert, Thomas Werner, Wolfgang Hentsch, Reinhard Fendler, Lutz Koehler
  • Patent number: 8610520
    Abstract: An electrostatically actuated micro-mechanical switching device with movable elements formed in the bulk of a substrate for closing and releasing at least one Ohmic contact by a horizontal movement of the movable elements in a plane of the substrate. The switching device has a drive with comb-shaped electrodes including fixed driving electrodes and movable electrodes. A movable push rod is mechanically connected with the movable electrodes, extends through the electrodes, has a movable contact element at one side, and at least one restoring spring. A signal line has two parts interrupted by a gap. The micro-mechanical switching device is in shunt-configuration with low loss, high isolation in a wide frequency range, low switching time at low actuation voltage and sufficient reliability. The line impedance of the signal line and its variation is as small as possible. The switching device is in shunt-configuration for closing and releasing the Ohmic contact between a ground line and the signal line.
    Type: Grant
    Filed: June 7, 2011
    Date of Patent: December 17, 2013
    Assignees: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V., Sony Corporation
    Inventors: Joerg Froemel, Thomas Gessner, Christian Kaufmann, Stefan Leidich, Markus Nowack, Steffen Kurth, Andreas Bertz, Koichi Ikeda, Akira Akiba
  • Publication number: 20090236311
    Abstract: A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.
    Type: Application
    Filed: April 30, 2009
    Publication date: September 24, 2009
    Applicant: FHR Anlagenbau GmbH
    Inventors: Thomas Gessner, Andreas Bertz, Reinhard Schubert, Thomas Werner, Wolfgang Hentsch, Reinhard Fendler, Lutz Koehler
  • Patent number: 6969628
    Abstract: The invention relates to a microstructure in a preferably electrically conductive substrate (1), more specifically made of doped single crystal silicon, with at least one functional unit (2.1, 2.2) and to a method of fabricating the same. In accordance with the invention, the functional unit (2.1, 2.2) is mechanically and electrically separated from the substrate (1) on all sides by means of isolation gaps (5, 5a) and is connected, on at least one site, to a first structure (4a) of an electrically conductive layer (S) that is electrically isolated from the substrate (1) by way of an isolation layer (3) and that secures the unit into position relative to the substrate (1). For this purpose, the functional unit (2.1, 2.2) is released from the substrate (1) in such a manner that the isolation gaps (5, 5a) are provided on all sides relative to the substrate (1).
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: November 29, 2005
    Assignee: memsfab GmbH
    Inventors: Andreas Bertz, Thomas Gessner, Matthias Küchler, Roman Knöfler
  • Patent number: 6849912
    Abstract: What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: February 1, 2005
    Assignee: Fraunhofer-Gesellschaft zur Forderung der angewandten Forschung, e.V.
    Inventors: Andreas Bertz, Steffen Heinz, Thomas Gessner
  • Publication number: 20030176007
    Abstract: The invention relates to a microstructure in a preferably electrically conductive substrate (1), more specifically made of doped single crystal silicon, with at least one functional unit (2.1, 2.2) and to a method of fabricating the same. In accordance with the invention, the functional unit (2.1, 2.2) is mechanically and electrically separated from the substrate (1) on all sides by means of isolation gaps (5, 5a) and is connected, on at least one site, to a first structure (4a) of an electrically conductive layer (S) that is electrically isolated from the substrate (1) by way of an isolation layer (3) and that secures the unit into position relative to the substrate (1). For this purpose, the functional unit (2.1, 2.2) is released from the substrate (1) in such a manner that the isolation gaps (5, 5a) are provided on all sides relative to the substrate (1).
    Type: Application
    Filed: December 13, 2002
    Publication date: September 18, 2003
    Inventors: Andreas Bertz, Thomas Gessner, Matthias Kuchler, Roman Knofler
  • Publication number: 20030173611
    Abstract: What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a movable gate structure disposed by means of at least one flexible suspension in front of said channel zone and spaced therefrom, which is characterized by the provision that the movable gate structure consists of the material of said semiconductor wafer. The suspensions of the movable structure preferably present a high ratio of their height to their width, such that the movable gate may preferably move in the wafer plane.
    Type: Application
    Filed: February 12, 2003
    Publication date: September 18, 2003
    Inventors: Andreas Bertz, Steffen Heinz, Thomas Gessner