Patents by Inventor Andreas E. Grassmann

Andreas E. Grassmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dual gate material process for CMOS technologies
    Patent number: 6828181
    Abstract: A method and structure for a method of manufacturing a device having different types of transistors, wherein gates of the different types of transistors in the device comprise different materials. The method comprises depositing a silicon layer on a gate dielectric layer, depositing a first-type gate material on the silicon layer, removing the first-type gate material from areas where a second-type gate is to be formed, depositing a second-type gate material on the silicon layer in areas where the first-type gate material was removed, and simultaneously patterning the first-type gate material and the second-type gate material into first-type and second-type gates, and anneal and transform the two types of gate materials.
    Type: Grant
    Filed: May 8, 2003
    Date of Patent: December 7, 2004
    Assignee: International Business Machines Corporation
    Inventors: Jia Chen, Andreas E. Grassmann
  • DUAL GATE MATERIAL PROCESS FOR CMOS TECHNOLOGIES
    Publication number: 20040224451
    Abstract: A method and structure for a method of manufacturing a device having different types of transistors, wherein gates of the different types of transistors in the device comprise different materials. The method comprises depositing a silicon layer on a gate dielectric layer, depositing a first-type gate material on the silicon layer, removing the first-type gate material from areas where a second-type gate is to be formed, depositing a second-type gate material on the silicon layer in areas where the first-type gate material was removed, and simultaneously patterning the first-type gate material and the second-type gate material into first-type and second-type gates, and anneal and transform the two types of gate materials.
    Type: Application
    Filed: May 8, 2003
    Publication date: November 11, 2004
    Applicants: International Business Machines Corporation, Infineon Technologies North America Corp
    Inventors: Jia Chen, Andreas E. Grassmann