Patents by Inventor Andreas Glasl

Andreas Glasl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact electrode for semiconductor component
    Patent number: 4109273
    Abstract: A semiconductor device having one or more electrodes thereon composed of doped polycrystalline silicon. Initially undoped polycrystalline silicon is applied at select electrode positions of a semiconductor device and is then doped by diffusion or implantation. The resultant device is characterized by a high current amplification, a low inner path of resistance and low noise.
    Type: Grant
    Filed: June 29, 1977
    Date of Patent: August 22, 1978
    Assignee: Siemens Aktiengesellschaft
    Inventors: Andreas Glasl, Helmuth Murrmann
  • Method of producing a doped zone of a given conductivity type in a semiconductor body
    Patent number: 4029527
    Abstract: The "emitter-dip effect" is eliminated by applying a layer of an undoped polycrystalline semiconductor onto the surface of a select zone to be doped in a semiconductor body, for example, such as on the emitter zone of a silicon body and then diffusing a select dopant through the undoped polycrystalline semiconductor layer into the select zone of the semiconductor body.
    Type: Grant
    Filed: June 18, 1975
    Date of Patent: June 14, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Andreas Glasl, Helmuth Murrmann