Abstract: Mobile radio reception, in particular in motor vehicles, has the disadvantage in comparison to geographically fixed home reception, that line of sight contact with the transmitter rarely exists and the signal strength near the ground is significantly smaller than the signal strength for roof-top antennas. For minimizing these disturbances, antenna diversity systems were developed. A practical problem in the realization of antenna diversity systems is comprised therein, that the diversity circuits do not support a targeted selection of individual antennas so that the individual antennas following installation can be tested for their functionality.

Abstract: The invention concerns a device for and a process for testing electric motors, in particular fan motors, for functionality, wherein electromagnetic alternating fields produced by an electric motor are received by an antenna, wherein the received signals are analyzed for signal components in the frequency range of the rotation value of electric motors or their harmonics via an analysis unit, and wherein upon determination of functionality the results are indicated by an indicator unit.

Abstract: The invention concerns a device and a process for testing for functionality of loudspeakers, in which the electro-magnetic alternating fields produced by the loudspeaker are received via an antenna, the received signals are evaluated for signal components in the transmission range of loudspeakers using a unit for analysis, and in the case of the existence of the functionality this is displayed using a display unit.

Abstract: The invention concerns a device for and a process for testing electric motors, in particular fan motors, for functionality, wherein electromagnetic alternating fields produced by an electric motor are received by an antenna, wherein the received signals are analyzed for signal components in the frequency range of the rotation value of electric motors or their harmonics via an analysis unit, and wherein upon determination of functionality the results are indicated by an indicator unit.

Abstract: A photodetector which can be operated in two wavelength ranges and is comprised of two detectors (A, B) arranged one on top of the other. A Si Schottky diode forms detector A which absorbs light in a region .lambda.<0.9 .mu.m. Longer-waved light (1 .mu.m<.lambda.<2 .mu.m) is absorbed in detector B which is comprised of an Si/SiGe pn-diode. To increase the efficiency, detector B is made with an integrated resonator. A further increase of the efficiency of the photodetector is accomplished through the mounting of a Bragg reflector on the absorbing layer of detector B.

Abstract: A process for preparing a bipolar transistor for very high frequencies is described, which is especially advantageous for the preparation of heterobipolar transistors and leads to components with low parasitic capacities and low base lead resistance. The process includes forming a structured first layer with collector zone and insulation areas surrounding the collector zone on a monocrystalline lead layer. A series of monocrystalline transistor layers are grown on the first layer over the collector zone by differential epitaxy and a series of polycrystalline layers is grown at the same time over the insulation areas. A series of polycrystalline layers is designed as a base lead.

Abstract: Manufacture of a semiconductor array of integrated silicon-germanium heterobipolar transistors having a silicon collector layer, a silicon-germanium base layer, a silicon emitter layer and a silicon emitter contact layer includes depositing in a single uninterrupted process and simultaneously doping the collector layer, the base layer, the emitter layer and the emitter contact layer. A base connection region is formed at the side of the base layer such that the intersection surfaces of the base/emitter/PN boundary layer and of the base/collector PN boundary layer with the surface of the semiconductor array are outside the silicon-germanium base layer. A silicon dioxide layer is formed by thermal oxidation over the entire exposed surface of the semiconductor array.