Abstract: According to one exemplary embodiment, a method for forming at least one metal gate transistor with a self-aligned source/drain contact includes forming a metal gate over a substrate. The method further includes forming a source/drain region in the substrate adjacent to the metal gate. The method also includes forming a conformal etch stop layer over the metal gate and the source/drain region. The method further includes forming a source/drain contact over the source/drain region, where the conformal etch stop layer imposes a pre-determined distance between the source/drain contact and the metal gate, thereby causing the source/drain contact to be self-aligned to the metal gate.

Abstract: According to one exemplary embodiment, a method for forming at least one metal gate transistor with a self-aligned source/drain contact includes forming a metal gate over a substrate. The method further includes forming a source/drain region in the substrate adjacent to the metal gate. The method also includes forming a conformal etch stop layer over the metal gate and the source/drain region. The method further includes forming a source/drain contact over the source/drain region, where the conformal etch stop layer imposes a pre-determined distance between the source/drain contact and the metal gate, thereby causing the source/drain contact to be self-aligned to the metal gate.

Abstract: Low contact resistance semiconductor devices and methods for fabricating such semiconductor devices are provided. In accordance with one exemplary embodiment, a method comprises depositing an insulating material overlying a metal silicide region and etching a contact opening within the insulating material and exposing the metal silicide region. The contact opening is at least partially bottom-filled with substantially pure cobalt. A conductor is deposited in the contact opening if, after the step of at least partially bottom-filling, the contact opening is not filled with the substantially pure cobalt.