Patents by Inventor Andreas Hochstrat

Andreas Hochstrat has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistive element, particularly memory element or logic element, and method for writing information to such an element
    Patent number: 7719883
    Abstract: A magnetoresistive element, in particular a memory element or a logic element and a method for writing information to such an element are disclosed. The element comprises a first contact of ferromagnetic material and a corresponding layer of magnetoelectric or ferromagnetic material, whereby the first contact is magnetically polarized, depending on an antiferromagnetic boundary surface polarization of the first layer. Said magnetic polarization forms binary information.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: May 18, 2010
    Assignee: Universitat Duisburh-Essen
    Inventors: Andreas Hochstrat, Xi Chen, Pavel Borisov, Wolfgang Kleemann
  • MAGNETORESISTIVE ELEMENT, PARTICULARLY MEMORY ELEMENT OR LOGIC ELEMENT, AND METHOD FOR WRITING INFORMATION TO SUCH AN ELEMENT
    Publication number: 20090067224
    Abstract: A magnetoresistive element, in particular a memory element or a logic element and a method for writing information to such an element are disclosed. The element comprises a first contact of ferromagnetic material and a corresponding layer of magnetoelectric or ferromagnetic material, whereby the first contact is magnetically polarized, depending on an antiferromagnetic boundary surface polarization of the first layer. Said magnetic polarization forms binary information.
    Type: Application
    Filed: March 30, 2006
    Publication date: March 12, 2009
    Applicant: UNIVERSITÄT DUISBURG-ESSEN
    Inventors: Andreas Hochstrat, Xi Chen, Pavel Borisov, Wolfgang Kleemann