Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.

Abstract: In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.

Abstract: A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

Abstract: A process material crust, such an ion-implanted photoresist, is removed from a treatment object. A halogen-free plasma is generated using a hydrocarbon gas in combination with oxygen gas to subject the crust to the plasma. Methane may be used as the hydrocarbon gas. This plasma may also be use to remove underlying unaltered photoresist and ion implantation related residues. The plasma may likewise be generated using a hydrogen containing gas, which may be pure hydrogen gas, in combination with oxygen gas. Several techniques are used which employ exposure of the treatment to a hydrogen/oxygen based plasma with subsequent exposure to a hydrocarbon/oxygen based plasma.