Abstract: A local control unit for a brake system is described. The control unit serves to actuate an electromechanical brake of the brake system of a wheel and according to one exemplary embodiment has a first connection for a main power supply and a second connection for a generator which is coupled to the wheel and which provides a standby power supply for the control unit.

Abstract: A sensor device includes a first stator pair, consisting of a first and second ferromagnetic stators and a second stator pair, consisting of the second ferromagnetic stator and a third ferromagnetic stator. The sensor device includes a multipole magnet, rotatable relative to the two stator pairs. A magnetic field is induced as a result of the rotation. The sensor device includes first and second magnetic field sensors configured to output first and second sensor signals, respectively. The sensor device includes a magnetic flux concentrator configured to concentrate the induced magnetic field at the location of the first magnetic field sensor and at the location of the second magnetic field sensor. The magnetic flux concentrator and the two magnetic field sensors are arranged such that an influence of a rotation-independent magnetic stray field on the sensor signals is compensated for upon difference formation or summation applied to the sensor signals.

Abstract: Furthermore, a local control unit for a brake system is described. The control unit serves to actuate an electromechanical brake of the brake system of a wheel and according to one exemplary embodiment has a first connection for a main power supply and a second connection for a generator which is coupled to the wheel and which provides a standby power supply for the control unit.

Abstract: A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.

Abstract: A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.

Abstract: A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.

Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor.

Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.

Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of ?40° C. is greater than at the temperature of 150° C.

Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.

Abstract: A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.

Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of ?40° C. is greater than at the temperature of 150° C.

Abstract: An integrated temperature sensor comprising a barrier layer connecting at least two conductive elements, wherein the barrier layer has a positive temperature coefficient.

Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.

Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor.

Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.

Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.

Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.

Abstract: A DC-DC converter is provided with a series circuit formed by an inductor and a capacitor, an output voltage for a load being tapped off across the capacitor and the load bringing about a load current. The converter also has a changeover switch for connecting an input voltage to the series circuit or for short-circuiting the series circuit and a control circuit for controlling the changeover switch in such a way that the changeover switch alternately short-circuits the series circuit or connects it to the input voltage. The converter also has a means for increasing a resistance in series with the series circuit at least in the event of the series circuit being short-circuited by means of the changeover switch, if the load current falls by a specific value.

Abstract: A method for determining the switching state of a transistor having an insulated drive electrode. The drive electrode is charged during a switch-on cycle depending on a drive signal and is discharged during a switch-off cycle depending on the drive signal. The transistor turns on or turns off depending on the charge stored on the drive electrode. The temporal profile of a charging and discharging current of the drive electrode or the temporal profile of the charge stored on the drive electrode is evaluated in order to determine the switching state. A state signal dependent on the switching state is provided, as is an apparatus for carrying out this method.