Patents by Inventor Andreas Kiep

Andreas Kiep has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220017053
    Abstract: Furthermore, a local control unit for a brake system is described. The control unit serves to actuate an electromechanical brake of the brake system of a wheel and according to one exemplary embodiment has a first connection for a main power supply and a second connection for a generator which is coupled to the wheel and which provides a standby power supply for the control unit.
    Type: Application
    Filed: June 9, 2021
    Publication date: January 20, 2022
    Applicant: Infineon Technologies AG
    Inventors: Andreas Kiep, Johannes Huchzermeier
  • Patent number: 10712208
    Abstract: A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: July 14, 2020
    Assignee: Infineon Technologies AG
    Inventors: Andreas Kiep, Holger Ruething, Frank Wolter
  • Publication number: 20190025132
    Abstract: A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.
    Type: Application
    Filed: September 26, 2018
    Publication date: January 24, 2019
    Inventors: Andreas Kiep, Holger Ruething, Frank Wolter
  • Patent number: 10132696
    Abstract: A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.
    Type: Grant
    Filed: July 11, 2014
    Date of Patent: November 20, 2018
    Assignee: Infineon Technologies AG
    Inventors: Andreas Kiep, Holger Ruething, Frank Wolter
  • Patent number: 10036771
    Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor.
    Type: Grant
    Filed: August 28, 2014
    Date of Patent: July 31, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Benno Koeppl, Frank Auer, Andreas Kiep
  • Patent number: 9891640
    Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: February 13, 2018
    Assignee: Infineon Technologies AG
    Inventors: Stefan Willkofer, Andreas Kiep
  • Patent number: 9871126
    Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of ?40° C. is greater than at the temperature of 150° C.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: January 16, 2018
    Assignee: Infineon Technologies AG
    Inventors: Andreas Kiep, Stefan Willkofer, Hans-Joachim Schulze
  • Patent number: 9513318
    Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: December 6, 2016
    Assignee: Infineon Technologies AG
    Inventors: Andreas Kiep, Stefan Willkofer
  • Publication number: 20160011058
    Abstract: A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.
    Type: Application
    Filed: July 11, 2014
    Publication date: January 14, 2016
    Inventors: Andreas Kiep, Holger Ruething, Frank Wolter
  • Publication number: 20150364468
    Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of ?40° C. is greater than at the temperature of 150° C.
    Type: Application
    Filed: June 16, 2014
    Publication date: December 17, 2015
    Inventors: Andreas Kiep, Stefan Willkofer, Hans-Joachim Schulze
  • Publication number: 20150346245
    Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.
    Type: Application
    Filed: May 29, 2014
    Publication date: December 3, 2015
    Inventors: Andreas Kiep, Stefan Willkofer
  • Publication number: 20150346037
    Abstract: An integrated temperature sensor comprising a barrier layer connecting at least two conductive elements, wherein the barrier layer has a positive temperature coefficient.
    Type: Application
    Filed: May 29, 2014
    Publication date: December 3, 2015
    Inventors: Andreas Kiep, Stefan Willkofer, Andreas Strasser
  • Publication number: 20150010041
    Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor.
    Type: Application
    Filed: August 28, 2014
    Publication date: January 8, 2015
    Inventors: Benno Koeppl, Frank Auer, Andreas Kiep
  • Publication number: 20140368258
    Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.
    Type: Application
    Filed: June 14, 2013
    Publication date: December 18, 2014
    Inventors: Stefan Willkofer, Andreas Kiep
  • Patent number: 8847575
    Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: September 30, 2014
    Assignee: Infineon Technologies AG
    Inventors: Benno Koeppl, Frank Auer, Andreas Kiep
  • Publication number: 20130093411
    Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 18, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Benno Koeppl, Frank Auer, Andreas Kiep
  • Patent number: 7023184
    Abstract: A DC-DC converter is provided with a series circuit formed by an inductor and a capacitor, an output voltage for a load being tapped off across the capacitor and the load bringing about a load current. The converter also has a changeover switch for connecting an input voltage to the series circuit or for short-circuiting the series circuit and a control circuit for controlling the changeover switch in such a way that the changeover switch alternately short-circuits the series circuit or connects it to the input voltage. The converter also has a means for increasing a resistance in series with the series circuit at least in the event of the series circuit being short-circuited by means of the changeover switch, if the load current falls by a specific value.
    Type: Grant
    Filed: April 14, 2004
    Date of Patent: April 4, 2006
    Assignee: Infineon Technoloiges AG
    Inventor: Andreas Kiep
  • Patent number: 7005882
    Abstract: A method for determining the switching state of a transistor having an insulated drive electrode. The drive electrode is charged during a switch-on cycle depending on a drive signal and is discharged during a switch-off cycle depending on the drive signal. The transistor turns on or turns off depending on the charge stored on the drive electrode. The temporal profile of a charging and discharging current of the drive electrode or the temporal profile of the charge stored on the drive electrode is evaluated in order to determine the switching state. A state signal dependent on the switching state is provided, as is an apparatus for carrying out this method.
    Type: Grant
    Filed: April 7, 2004
    Date of Patent: February 28, 2006
    Assignee: Infineon Technologies AG
    Inventor: Andreas Kiep
  • Publication number: 20040263201
    Abstract: The invention relates to a method for determining the switching state of a transistor having an insulated drive electrode. The drive electrode is charged during a switch-on cycle depending on a drive signal and is discharged during a switch-off cycle depending on the drive signal. The transistor turns on or turns off depending on the charge stored on the drive electrode. The temporal profile of a charging and discharging current of the drive electrode or the temporal profile of the charge stored on the drive electrode is evaluated in order to determine the switching state. A state signal dependent on the switching state is provided, as is an apparatus for carrying out this method.
    Type: Application
    Filed: April 7, 2004
    Publication date: December 30, 2004
    Applicant: Infineon Technologies AG
    Inventor: Andreas Kiep
  • Publication number: 20040257051
    Abstract: A DC-DC converter is provided with a series circuit formed by an inductor and a capacitor, an output voltage for a load being tapped off across the capacitor and the load bringing about a load current. The converter also has a changeover switch for connecting an input voltage to the series circuit or for short-circuiting the series circuit and a control circuit for controlling the changeover switch in such a way that the changeover switch alternately short-circuits the series circuit or connects it to the input voltage. The converter also has a means for increasing a resistance in series with the series circuit at least in the event of the series circuit being short-circuited by means of the changeover switch, if the load current falls by a specific value.
    Type: Application
    Filed: April 14, 2004
    Publication date: December 23, 2004
    Applicant: Infineon Technologies AG
    Inventor: Andreas Kiep