Patents by Inventor Andreas Kiep
Andreas Kiep has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220017053Abstract: Furthermore, a local control unit for a brake system is described. The control unit serves to actuate an electromechanical brake of the brake system of a wheel and according to one exemplary embodiment has a first connection for a main power supply and a second connection for a generator which is coupled to the wheel and which provides a standby power supply for the control unit.Type: ApplicationFiled: June 9, 2021Publication date: January 20, 2022Applicant: Infineon Technologies AGInventors: Andreas Kiep, Johannes Huchzermeier
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Patent number: 10712208Abstract: A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.Type: GrantFiled: September 26, 2018Date of Patent: July 14, 2020Assignee: Infineon Technologies AGInventors: Andreas Kiep, Holger Ruething, Frank Wolter
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Publication number: 20190025132Abstract: A semiconductor die includes a single power transistor or power diode, a temperature sense diode formed close enough to the single power transistor or power diode to measure an accurate temperature. The temperature sense diode comprises first and second diodes or strings of diodes. A separate integrated circuit is operable to measure first and second voltage drops of both the first and second diodes or strings of diodes using same magnitude currents, and estimate the temperature of the single power transistor or power diode based on the difference between the first and second forward voltage drop measurements. An overall pn junction area of the first diode or string of first diodes is different from an overall pn junction area of the second diode or string of second diodes.Type: ApplicationFiled: September 26, 2018Publication date: January 24, 2019Inventors: Andreas Kiep, Holger Ruething, Frank Wolter
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Patent number: 10132696Abstract: A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.Type: GrantFiled: July 11, 2014Date of Patent: November 20, 2018Assignee: Infineon Technologies AGInventors: Andreas Kiep, Holger Ruething, Frank Wolter
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Patent number: 10036771Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor.Type: GrantFiled: August 28, 2014Date of Patent: July 31, 2018Assignee: INFINEON TECHNOLOGIES AGInventors: Benno Koeppl, Frank Auer, Andreas Kiep
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Patent number: 9891640Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.Type: GrantFiled: June 14, 2013Date of Patent: February 13, 2018Assignee: Infineon Technologies AGInventors: Stefan Willkofer, Andreas Kiep
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Patent number: 9871126Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of ?40° C. is greater than at the temperature of 150° C.Type: GrantFiled: June 16, 2014Date of Patent: January 16, 2018Assignee: Infineon Technologies AGInventors: Andreas Kiep, Stefan Willkofer, Hans-Joachim Schulze
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Patent number: 9513318Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.Type: GrantFiled: May 29, 2014Date of Patent: December 6, 2016Assignee: Infineon Technologies AGInventors: Andreas Kiep, Stefan Willkofer
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Publication number: 20160011058Abstract: A semiconductor die includes a discrete semiconductor device and at least one diode. The temperature of the discrete semiconductor device is determined by measuring a first forward voltage drop of the at least one diode under a first test condition, measuring a second forward voltage drop of the at least one diode under a second test condition and estimating the temperature of the discrete semiconductor device based on the difference between the first and second forward voltage drop measurements.Type: ApplicationFiled: July 11, 2014Publication date: January 14, 2016Inventors: Andreas Kiep, Holger Ruething, Frank Wolter
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Publication number: 20150364468Abstract: A discrete semiconductor transistor includes a gate resistor electrically coupled between a gate electrode terminal and a gate electrode of the discrete semiconductor transistor. A resistance R of the gate resistor at a temperature of ?40° C. is greater than at the temperature of 150° C.Type: ApplicationFiled: June 16, 2014Publication date: December 17, 2015Inventors: Andreas Kiep, Stefan Willkofer, Hans-Joachim Schulze
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Publication number: 20150346245Abstract: An example relates to a circuit comprising an electronic switching element and an temperature compensating element, which is arranged in the vicinity of the electronic switching element.Type: ApplicationFiled: May 29, 2014Publication date: December 3, 2015Inventors: Andreas Kiep, Stefan Willkofer
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Publication number: 20150346037Abstract: An integrated temperature sensor comprising a barrier layer connecting at least two conductive elements, wherein the barrier layer has a positive temperature coefficient.Type: ApplicationFiled: May 29, 2014Publication date: December 3, 2015Inventors: Andreas Kiep, Stefan Willkofer, Andreas Strasser
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Publication number: 20150010041Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor.Type: ApplicationFiled: August 28, 2014Publication date: January 8, 2015Inventors: Benno Koeppl, Frank Auer, Andreas Kiep
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Publication number: 20140368258Abstract: An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.Type: ApplicationFiled: June 14, 2013Publication date: December 18, 2014Inventors: Stefan Willkofer, Andreas Kiep
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Patent number: 8847575Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.Type: GrantFiled: October 14, 2011Date of Patent: September 30, 2014Assignee: Infineon Technologies AGInventors: Benno Koeppl, Frank Auer, Andreas Kiep
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Publication number: 20130093411Abstract: According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a predefined current flowing through the field effect transistor.Type: ApplicationFiled: October 14, 2011Publication date: April 18, 2013Applicant: INFINEON TECHNOLOGIES AGInventors: Benno Koeppl, Frank Auer, Andreas Kiep
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Patent number: 7023184Abstract: A DC-DC converter is provided with a series circuit formed by an inductor and a capacitor, an output voltage for a load being tapped off across the capacitor and the load bringing about a load current. The converter also has a changeover switch for connecting an input voltage to the series circuit or for short-circuiting the series circuit and a control circuit for controlling the changeover switch in such a way that the changeover switch alternately short-circuits the series circuit or connects it to the input voltage. The converter also has a means for increasing a resistance in series with the series circuit at least in the event of the series circuit being short-circuited by means of the changeover switch, if the load current falls by a specific value.Type: GrantFiled: April 14, 2004Date of Patent: April 4, 2006Assignee: Infineon Technoloiges AGInventor: Andreas Kiep
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Patent number: 7005882Abstract: A method for determining the switching state of a transistor having an insulated drive electrode. The drive electrode is charged during a switch-on cycle depending on a drive signal and is discharged during a switch-off cycle depending on the drive signal. The transistor turns on or turns off depending on the charge stored on the drive electrode. The temporal profile of a charging and discharging current of the drive electrode or the temporal profile of the charge stored on the drive electrode is evaluated in order to determine the switching state. A state signal dependent on the switching state is provided, as is an apparatus for carrying out this method.Type: GrantFiled: April 7, 2004Date of Patent: February 28, 2006Assignee: Infineon Technologies AGInventor: Andreas Kiep
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Publication number: 20040263201Abstract: The invention relates to a method for determining the switching state of a transistor having an insulated drive electrode. The drive electrode is charged during a switch-on cycle depending on a drive signal and is discharged during a switch-off cycle depending on the drive signal. The transistor turns on or turns off depending on the charge stored on the drive electrode. The temporal profile of a charging and discharging current of the drive electrode or the temporal profile of the charge stored on the drive electrode is evaluated in order to determine the switching state. A state signal dependent on the switching state is provided, as is an apparatus for carrying out this method.Type: ApplicationFiled: April 7, 2004Publication date: December 30, 2004Applicant: Infineon Technologies AGInventor: Andreas Kiep
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Publication number: 20040257051Abstract: A DC-DC converter is provided with a series circuit formed by an inductor and a capacitor, an output voltage for a load being tapped off across the capacitor and the load bringing about a load current. The converter also has a changeover switch for connecting an input voltage to the series circuit or for short-circuiting the series circuit and a control circuit for controlling the changeover switch in such a way that the changeover switch alternately short-circuits the series circuit or connects it to the input voltage. The converter also has a means for increasing a resistance in series with the series circuit at least in the event of the series circuit being short-circuited by means of the changeover switch, if the load current falls by a specific value.Type: ApplicationFiled: April 14, 2004Publication date: December 23, 2004Applicant: Infineon Technologies AGInventor: Andreas Kiep