Abstract: The present invention relates to a method for monitoring the total amount of sulphur containing compounds in a metal or metal alloy plating bath, wherein the sulphur containing compounds contain at least one sulphur atom having an oxidation state below +6, the method comprising the steps (a), (b), optionally (c), and (d). Said method is a means of providing control over a metal plating process. Thus, the present invention relates furthermore to a controlled process for plating a metal on a substrate utilizing the method of the present invention for monitoring the total amount of said sulphur containing compounds.

Abstract: An aqueous indium or indium alloy plating bath comprising a source of indium ions, an acid, a source of halide ions, a surfactant according to formula (I) wherein A is selected from branched or unbranched C10-C15-alkyl; B is selected from the group consisting of hydrogen and alkyl; m is an integer ranging from 5 to 25; each R is independently from each other selected from hydrogen and methyl; and a dihydroxybenzene derivative according to formula (II) wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro; n is an integer ranging from 1 to 4, wherein, when the aqueous indium or indium alloy plating bath is an indium alloy plating bath, an alloying reducible metal is selected from the group consisting of aluminum, bismuth, copper, gold, lead, nickel, silver, tin, tungsten and zinc.

Abstract: An aqueous indium or indium alloy plating bath comprising a source of indium ions, an acid, a source of halide ions, a surfactant according to formula (I) wherein A is selected from branched or unbranched C10-C15-alkyl; B is selected from the group consisting of hydrogen and alkyl; m is an integer ranging from 5 to 25; each R is independently from each other selected from hydrogen and methyl; and a dihydroxybenzene derivative according to formula (II) wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro; n is an integer ranging from 1 to 4, and a process for deposition of indium or an indium alloy wherein the disclosed bath is used.

Abstract: The present invention deals with a process for deposition of indium or indium alloys and an article obtained by the process, wherein the process includes the steps i. providing a substrate having at least one metal or metal alloy surface; ii. depositing a first indium or indium alloy layer on at least one portion of said surface whereby a composed phase layer is formed of a part of the metal or metal alloy surface and a part of the first indium or indium alloy layer; iii. removing partially or wholly the part of the first indium or indium alloy layer which has not been formed into the composed phase layer; iv. depositing a second indium or indium alloy layer on the at least one portion of the surface obtained in step iii.

Abstract: The present invention relates to a method for monitoring the total amount of sulphur containing compounds in a metal or metal alloy plating bath, wherein the sulphur containing compounds contain at least one sulphur atom having an oxidation state below +6, the method comprising the steps (a), (b), optionally (c), and (d). Said method is a means of providing control over a metal plating process. Thus, the present invention relates furthermore to a controlled process for plating a metal on a substrate utilizing the method of the present invention for monitoring the total amount of said sulphur containing compounds.

Abstract: The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath.

Abstract: The present invention relates to a method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the use of such a method for controlling a plating process, a controlled process for electrolytically depositing copper/copper alloy onto a substrate utilizing the method for monitoring according to the present invention, and the use of one or more than one redox active compound for monitoring and/or determining the total amount of brighteners in the acidic copper/copper alloy plating bath.

Abstract: An aqueous indium or indium alloy plating bath comprising a source of indium ions, an acid, a source of halide ions, a surfactant according to formula (I) wherein A is selected from branched or unbranched C10-C15-alkyl; B is selected from the group consisting of hydrogen and alkyl; m is an integer ranging from 5 to 25; each R is independently from each other selected from hydrogen and methyl; and a dihydroxybenzene derivative according to formula (II) wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro; n is an integer ranging from 1 to 4, and a process for deposition of indium or an indium alloy wherein said bath is used.

Abstract: The present invention deals with a process for deposition of indium or indium alloys and an article obtained by the process, wherein the process includes the steps i. providing a substrate having at least one metal or metal alloy surface; ii. depositing a first indium or indium alloy layer on at least one portion of said surface whereby a composed phase layer is formed of a part of the metal or metal alloy surface and a part of the first indium or indium alloy layer; iii. removing partially or wholly the part of the first indium or indium alloy layer which has not been formed into the composed phase layer; iv. depositing a second indium or indium alloy layer on the at least one portion of the surface obtained in step iii. v.

Abstract: The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: The present invention relates to aqueous acidic plating baths for copper and copper alloy deposition in the manufacture of printed circuit boards, IC substrates, semiconducting and glass devices for electronic applications. The plating bath according to the present invention comprises copper ions, at least one acid and an ureylene polymer comprising amino residues on both termini and which is free of organically bound halogen. The plating bath is particularly useful for filling recessed structures with copper and build-up of pillar bump structures.

Abstract: The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy on substrates useful for thin film solar cells. The additives are thiourea compounds or derivatives which have the general formula (A): wherein X1 and X2 may be the same or different and are selected from the group consisting of arylene and heteroarylene; FG1 and FG2 may be the same or different or are selected from the group consisting of —S(O)2OH, —S(O)OH, —COOH, —P(O)2OH and primary, secondary and tertiary amino groups and salts and esters thereof; R is selected from the group consisting of alkylene, arylene or heteroarylene and n and m are integers from 1 to 5.

Abstract: The invention relates to electroplating additives for the deposition of a group IB metal/binary or ternary group IB-group IIIA/ternary, quaternary or pentanary group IB-group IIIA-group VIA alloy on substrates useful for thin film solar cells. The additives have the general formula (A): wherein X1 and X2 may be the same or different and are selected from the group consisting of arylene and heteroarylene; FG1 and FG2 may be the same or different or are selected from the group consisting of —S(O)2OH, —S(O)OH, —COOH, —P(O)2OH and primary, secondary and tertiary amino groups and salts and esters thereof; R is selected from the group consisting of alkylene, arylene or heteroarylene and n and m are integers from 1 to 5.