Abstract: A system and a corresponding method for simultaneous rotation and levitation of a substrate during deposition and/or etching of the substrate are disclosed. The system comprises a carrier located below the substrate, wherein the carrier comprises at least two gas inlets to provide gas to a bottom surface of the substrate to levitate the substrate above the carrier. The system further comprises at least one holding member connected to the carrier and being configured to restrict horizontal drifting of the substrate.

Abstract: A system for gas phase deposition comprises a gas injector configured to process gases to a substrate for gas phase deposition onto the substrate. The gas injector comprises a first flow path and a second flow path different from the first flow path. The system comprises a first temperature adjustment mechanism associated with the first flow path to control a temperature of a process gas passing through the first flow path. The system comprises a second temperature adjustment mechanism associated with at least the second flow path to control a temperature of a process gas passing through the second flow path. The first temperature adjustment mechanism and the second temperature adjustment mechanism are operable independently of each other. The system is configured to cause rotation and levitation of the substrate during etching of the substrate and/or deposition.