Patents by Inventor Andreas Kolitsch

Andreas Kolitsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250034709
    Abstract: The disclosure relates to a distribution body for distributing a process gas relative to a substrate to treat the substrate by means of the process gas, comprising a distribution plate, at least one gas inlet channel, a plurality of gas distribution channels, and a plurality of gas extraction channels, wherein the gas inlet channel extends from a lateral surface of the distribution plate to an interior of the distribution plate, wherein the gas distribution channels branch off from the at least one gas inlet channel and extend to a substrate-facing surface of the distribution plate to supply process gas to the substrate to be treated, wherein the gas distribution channels are directed essentially perpendicular to the substrate-facing surface, and wherein the gas extraction channels extend from the substrate-facing surface to a another surface of the distribution plate to convey gas away from the substrate.
    Type: Application
    Filed: November 7, 2022
    Publication date: January 30, 2025
    Inventors: Andreas Gleissner, Marianne Kolitsch-Mataln, Harald Okorn-Schmidt
  • Publication number: 20150196879
    Abstract: A process for producing a porous metal membrane (pore size 10 nm and 1 um), a metal membrane of this type, the use of the metal membrane and also corresponding filter modules. The Dice is 1-20 microns. The plasma immersion ion implantation process is utilized by bombarding a very thin metal foil with noble gas ions accelerated by means of a first accelerating voltage, in particular from both sides. The ion current is selected so that supersaturation occurs in the metal foil. Pores, in particular under the metal surface, are then formed by bubble segregation after supersaturation. Opening of the pores formed under the metal surface by ion implantation is effected by atomization of the surface by means of bombardment with noble gas ions using a second accelerating voltage which is lower than the first accelerating voltage.
    Type: Application
    Filed: June 28, 2013
    Publication date: July 16, 2015
    Inventors: Stephan Brinke-Seiferth, Andreas Kolitsch, Anatoli Rogozin