Abstract: In an embodiment an optoelectronic component includes at least one semiconductor body including a first semiconductor region, a second semiconductor region and an active region therebetween, wherein the active region is configured to generate electromagnetic radiation, a cover element laterally surrounding the at least one semiconductor body and having at least one patterned side surface facing away from the at least one semiconductor body, wherein the cover element contains an index-matched material, and a reflection element, which at least partly covers the at least one patterned side surface, wherein the active region is at least partly laterally surrounded by the first semiconductor region.

Abstract: In an embodiment an optoelectronic semiconductor device includes a semiconductor layer stack having a first semiconductor layer of a first conductivity type, an active zone, and a second semiconductor layer of a second conductivity type, wherein the optoelectronic semiconductor device is configured to emit generated electromagnetic radiation via a first main surface of the first semiconductor layer, and wherein a lateral width z of the active zone is smaller than a smallest lateral width c of the first and the second semiconductor layers, separating elements arranged adjacent to the semiconductor layer stack, the separating elements vertically extending along the semiconductor layer stack, and portions of a metal layer arranged on a side of the first semiconductor layer facing away from the active zone and arranged at positions of the separating elements.

Abstract: In an embodiment a method for producing a plurality of micro semiconductor LED structures in a wafer includes epitaxially growing a semiconductor layer over a growth substrate wafer, applying a hard-mask material layer over the semiconductor layer, wherein a hard-mask material layer includes a plurality of adjacently arranged windows facing towards the semiconductor layer, introducing depressions into the semiconductor layer in the windows by sublimation and epitaxially growing a semiconductor light-emitting diode structure in each of the depressions.

Abstract: In an embodiment, a method for producing a substrate having a structured surface includes providing the substrate having a substrate body and having a surface to be structured, forming an absorption layer, a first mask layer and a second mask layer on the surface to be structured, forming openings in the second mask layer in which the first mask layer is exposed, exposing the surface to be structured in a region of the openings, forming depressions in the surface to be structured in the region of the openings to form the structured surface of the substrate and removing the absorption layer from the substrate.