Abstract: The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.

Abstract: The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.

Abstract: A power supply circuit, comprising a first reverse blocking transistor coupled to an AC power line; a second reverse blocking transistor coupled to the AC power line; a first inductor provided between the first reverse blocking transistor and the AC power line and configured to store energy; a first diode having a first terminal that is coupled to one end of the first inductor; a first capacitor having a terminal that is coupled to a second terminal of the first diode; and a first output terminal provided between the first diode and the first capacitor. The first and second transistors are arranged in an anti-parallel configuration and together define an AC switch.

Abstract: The invention relates to an encapsulated power semiconductor assembly comprising a substrate consisting of an insulation material (ceramic), provided with a plurality of islands, which are composed of a thermal conductive material, in particular of partial surfaces of a metal layer. Power semiconductor chips are soldered onto said islands. Electric connections that run from the chips to the connecting elements are produced in the form of bonding pads on additional islands or in the form of wires and islands that are configured as printed conductors. The substrate and the chips are encapsulated, whereas the connection elements project beyond said encapsulation and the metallic underside of the substrate is exposed in order to be fastened to a heat sink.

Abstract: A power supply circuit, comprising a first reverse blocking transistor coupled to an AC power line; a second reverse blocking transistor coupled to the AC power line; a first inductor provided between the first reverse blocking transistor and the AC power line and configured to store energy; a first diode having a first terminal that is coupled to one end of the first inductor; a first capacitor having a terminal that is coupled to a second terminal of the first diode; and a first output terminal provided between the first diode and the first capacitor. The first and second transistors are arranged in an anti-parallel configuration and together define an AC switch.

Abstract: A method for operating an alternating-current (AC) controller system includes providing a first bi-directional switch coupled to a load and an AC power source. The first bi-directional switch is a solid-state device. The first switch is turned on in a first half-cycle of an AC cycle. The first switch is turned off in the first half-cycle of the AC cycle.

Abstract: The invention relates to a power semiconductor module (10) having a baseplate (1) on which at least one substrate (13) is arranged which is fitted with power semiconductor chips (11, 12) and can be pressed via pressure elements and contact cords (17) against the baseplate (1). The baseplate (1) has centering elements on which a frame (3) which defines fields (7) and is in the form of a grid is provided, with corresponding substrates (13) with power semiconductor chips being arranged in at least some of the fields (7), which substrates (13) can be made contact with via contact rails (15).