Patents by Inventor Andreas M. T. P. Van Der Putten

Andreas M. T. P. Van Der Putten has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6316059
    Abstract: Metal patterns (15) can be provided on a glass substrate (1) in an electroless process by modifying the substrate with a silane layer (3), locally removing said layer with a laser or UV-ozone treatment and selectively nucleating the remaining silane layer in a polymer-stabilized Pd sol. Neither a photoresist nor organic solvents are used. The method is very suitable for the manufacture of the black matrix on a passive plate for an LCD, or on panels of other flat colour displays, such as flat cathode ray tubes.
    Type: Grant
    Filed: December 18, 1995
    Date of Patent: November 13, 2001
    Assignee: U.S. Philips Corporation
    Inventors: Andreas M. T. P. Van Der Putten, Nicolaas P. Willard, Lambertus G. J. Fokkink, Ivo G. J. Camps
  • Patent number: 5527734
    Abstract: By using an electroless metallization bath to which a stabilizer is added which suppresses the cathodic partial reaction, pyramid-shaped bumps (53) can be grown on the bond pads of semiconductor devices without lateral overgrowth of the coating layer 3. The angle of inclination a is a function of the concentration of the stabilizer.
    Type: Grant
    Filed: September 24, 1991
    Date of Patent: June 18, 1996
    Assignee: U.S. Philips Corporation
    Inventor: Andreas M. T. P. van der Putten
  • Patent number: 5384154
    Abstract: By virtue of an activating pretreatment with a polymer-stabilized Pd sol, patterns, such as transparent patterns of indium-tin oxide, can be deposited on glass by electroless metallization. For example polyvinyl alcohol is used as the polymer.
    Type: Grant
    Filed: May 4, 1994
    Date of Patent: January 24, 1995
    Assignee: U.S. Philips Corporation
    Inventors: Johannes W. G. De Bakker, Lambertus G. J. Fokkink, Andreas M. T. P. Van Der Putten, Henricus A. M. Kox
  • Patent number: 5278450
    Abstract: A semiconductor device with a monocrystalline silicon body (1) is provided with a dielectric layer (2) with contact holes (3) through which the silicon body (1) is contacted with an aluminum metallization. To avoid undesirable separation of silicon, a discontinuous nucleus layer (5) of a metal nobler than silicon is formed on the silicon body (1) in the contact holes (3) preceding the provision of the metallization (4). Metals such as palladium and copper may be used to form the discontinuous layer.
    Type: Grant
    Filed: January 8, 1992
    Date of Patent: January 11, 1994
    Assignee: U.S. Philips Corporation
    Inventors: Robertus A. M. Wolters, Edwin T. Swart, Andreas M. T. P. Van Der Putten
  • Patent number: 5246732
    Abstract: The adhesion of electroless copper to a substrate (1) for a conductor pattern can be improved by applying a SiO.sub.2 layer (3) on which a thin metal pattern of, for example, TiW (51) is provided. Anchors are formed on the surface by subjecting the SiO.sub.2 layer to an underetching treatment. The electroless copper (9) grows around these anchors and, hence, adheres to the substrate.
    Type: Grant
    Filed: July 1, 1992
    Date of Patent: September 21, 1993
    Assignee: U.S. Philips Corporation
    Inventor: Andreas M. T. P. van der Putten
  • Patent number: 5059449
    Abstract: From a solution comprising a salt of a noble metal, for example Pd, and ammonia or amine a metal track is deposited on a substrate surface which may be an insulator, semiconductor or conductor, by means of a laser beam.
    Type: Grant
    Filed: August 15, 1989
    Date of Patent: October 22, 1991
    Assignee: U.S. Philips Corporation
    Inventors: Andreas M. T. P. van der Putten, Johannes M. G. Rikken, Johannes W. M. Jacobs, Cornells G. C. M. De Kort
  • Patent number: 5017516
    Abstract: By using a nucleating solution having a low concentration of PdCl.sub.2 at an increased temperature, contact holes can be nucleated in a selective manner and, subsequently, metallized in an electroless bath, said contact holes being etched by means of plasma etching in dielectric layers of VLSI devices having a silicon semiconductor body.
    Type: Grant
    Filed: February 2, 1990
    Date of Patent: May 21, 1991
    Assignee: U.S. Philips Corporation
    Inventor: Andreas M. T. P. van der Putten