Abstract: A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporize the anode and produce zinc oxide nanostructures. Contemplated is the use of the zinc oxide nanostructures to produce components that have applications in, for example, optoelectronics, energy storage devices, field emission devices, and sensors such as UV photosensors, gas sensors and humidity sensors.

Abstract: The invention provides an ion source comprising first and second cathode pole pieces spaced apart from one another to form a cavity therebetween, an edge of the first cathode pole piece being spaced apart from an edge of the second cathode pole piece to define an elongate cathode gap between the respective edges of the pole pieces, the elongate cathode gap having a longitudinal axis; at least one magnet arranged for magnetising the first and second cathode pole pieces with opposite magnetic polarities; an elongate anode located in the cavity, the anode being spaced apart from the first and second cathode pole pieces and having a longitudinal axis, the longitudinal axis of the elongate anode and the longitudinal axis of the elongate cathode gap substantially coplanar; a first electrical connection which extends from outside the cavity to the anode; and a gas feed conduit which extends from outside the cavity to inside the cavity for introducing a gas into the cavity.

Abstract: A method for preparing magnetic materials is disclosed. The magnetic materials are prepared by implanting low energy magnetic ions into a substrate and annealing with a charged particle beam. Magnetic materials comprising magnetic nanoclusters in the near-surface region of a substrate are also disclosed. The magnetic materials are useful in, for example, magneto-electronic devices such as magnetic sensors.

Abstract: A method for preparing magnetic materials is disclosed. The magnetic materials are prepared by implanting low energy magnetic ions into a substrate and annealing with a charged particle beam. Magnetic materials comprising magnetic nanoclusters in the near-surface region of a substrate are also disclosed. The magnetic materials are useful in, for example, magneto-electronic devices such as magnetic sensors.

Abstract: A method for preparing zinc oxide nanostructures using arc discharge is disclosed. The method comprises the provision of an anode and a cathode in an arc discharge chamber. Current is supplied to the anode and the cathode to establish an arc discharge between the cathode and the anode to vaporise the anode and produce zinc oxide nanostructures. Contemplated is the use of the zinc oxide nanostructures to produce components that have applications in, for example, optoelectronics, energy storage devices, field emission devices, and sensors such as UV photosensors, gas sensors and humidity sensors.

Abstract: A method for preparing p-type zinc oxide (ZnO) is described. The p-type ZnO is prepared by implanting low energy acceptor ions into an n-type ZnO substrate and annealing. In an alternative embodiment, the n-type ZnO substrate is pre-doped by implanting low energy donor ions. The p-type ZnO may have application in various optoelectronic devices, and a p-n junction formed from the p-type ZnO prepared as described above and a bulk n-type ZnO substrate is also described.