Abstract: Disclosed is a method for sending a vehicle-to-x-message including an information part and a safety part, wherein the safety part comprises information that can be used to evaluate quality and reliability of the information contained in the information part regarding its usability and qualification for safety-related driving functions and tasks. Also disclosed is a corresponding method for receiving and a corresponding vehicle-to-x-communications module.

Abstract: Method for thermal insulation of an evacuable container comprising an inner container, an outer container and a cavity disposed between the inner container and the outer container, wherein said method comprises a) using a vacuum pump to reduce a pressure in the cavity and after achieving a first value of the pressure interrupting the connection to the vacuum pump, b) subsequently making a connection from a reservoir container of the thermally insulating particulate material to a filling opening provided in the region of the cavity, c) setting the evacuable container into motion, wherein the thermally insulating particulate material flows into the cavity according to a) and the pressure in the cavity increases due to the air introduced with the thermally insulating particulate material, d) terminating the filling at a second value of the pressure by interrupting the connection from the cavity to the reservoir container, e) repeating step a), wherein the output of the vacuum pump with which the cavity is deaer

Abstract: A production method for a micromechanical sensor apparatus. The method includes: providing a bonded wafer stack comprising an ASIC wafer and a MEMS wafer, the ASIC wafer including ASIC switching devices and the MEMS wafer including MEMS sensor devices, an ASIC switching device and a corresponding MEMS sensor device are arranged one above the other such that they form a respective micromechanical sensor apparatus in the bonded wafer stack; providing a first packaging wafer having first front and rear faces; in the first rear face, the first packaging wafer has blind holes assigned to corresponding sensor detection regions of a respective MEMS sensor device; bonding the first rear face to the wafer stack such that the blind holes are each in fluid connection with the corresponding sensor detection region; backthinning, on the first front face, the first packaging wafer bonded to the wafer stack to expose the blind holes.

Abstract: The wire saw for sawing a work piece, e.g. to make silicon wafers for electronic applications, has two or more sawing fields (10, 20) each having a number of saw wires (11, 21) stretched between respective wire guiding cylinders (3, 4; 5, 6). The sawing fields are disposed one above the other. A first sawing field (10) includes deflection rollers (7) for deflecting slack sides (14) of its saw wires that face a second sawing field (20). The slack sides (14) of the saw wires of the first sawing field are guided over the deflection rollers (7) so as to deflect the saw wires and thus increase distances of their slack sides (14) to sawing sides (23) of the saw wires of the second sawing field (20).

Abstract: A method of manufacturing silicon wafers that include a front surface and a block surface and lateral edges, includes forming a silicon wafer by separating a rectangular, in particular, silicon block with lateral surfaces and before separation, grounding and/or polishing the lateral surfaces of the silicon block parallel to the edge of the silicon wafer.

Abstract: The high-purity alkaline earth halide crystals, especially CaF2, BaF2 or MgF2 crystals, have a diffuse scatter distribution function value of less than 7×10?7, an RMS uniformity of refractive index of less than 15×10?8 after subtraction of Zernike coefficients and an RMS value of birefringence in the (111) direction of less than 0.2 nm/cm. Preferably the crystals exhibit a loss coefficient of less than 5×10?4 cm?1 after irradiation with 10×109 laser pulses with an energy density of 10 mJ/cm2 at a wavelength of 193 nm. Also they have RMS birefringence in the (100) direction or the (111) direction that is less than 0.35 nm/cm.

Abstract: A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material 1) upon visual observation in daylight has no color; and 2) upon illumination with a white-light lamp in a darkroom a) has no or at maximum a just barely perceivable reddish and/or bluish fluorescence; and b) has no or at maximum a just barely perceivable diffuse scattering; and c) has no or only slight discrete scattering of at maximum two visually perceivable scattering centers per dm3. In this way, crystals can be obtained which after tempering have a BSDF value of <7×10?7, an RMS homogeneity after the subtraction of 36 Zernike coefficients of <15×10?8, an SDR-RMS value in the 111 direction of <0.2 nm/cm.

Abstract: Single crystals with low scattering, small refractive index differences and few small angle grain boundaries have a bi-directional scattering distribution function value (BSDF) of less than 1.5*10?6 or 5*10?7.

Abstract: A method of manufacturing silicon wafers that include a front surface and a block surface and lateral edges, includes forming a silicon wafer by separating a rectangular, in particular, silicon block with lateral surfaces and before separation, grounding and/or polishing the lateral surfaces of the silicon block parallel to the edge of the silicon wafer.

Abstract: The method of manufacturing silicon wafers from one or more silicon blocks or bricks includes etching at least one lateral surface of a silicon block or brick using a mixture of highly oxidative acids and then forming a plurality of wafers by sawing the silicon block or brick. During the etching of the lateral surface a mean amount of material removed is 3 to 160 ?m thick and the material is isotropically removed with a constant mean material removal speed of from 1 to 20 ?m/min across the entire lateral surface. Prior to the etching treatment the silicon block or brick is advantageously subjected to an abrasive grinding or polishing. The mixture of acids is preferably a mixture of 50 to 70% nitric and 40 to 60% hydrofluoric acids in a ratio range of 8:1 to 4:1.

Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then vaporized at a temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a temperature between 500° C. to 1280° C. to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.

Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then sublimed at a sublimation temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a condensation temperature of at least 500° C., which is at least 20° C. below the sublimitation temperature, to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.

Abstract: For producing large volume optical components of high optical quality from synthetic quartz glass blanks, the latter are heated in a component mold in a furnace with a protective gas atmosphere to a temperature 50° to 170° K above the softening point, this temperature being held for 20 to 90 minutes and, during this holding time, the quartz glass blank being pressed into the component mold. By these means, a gentle treatment of the quartz glass, a good yield, a decrease in the energy input and a complete filling up of the component mold are achieved.

Abstract: A method for producing high-purity, large-volume monocrystals that are especially radiation-resistant and have low intrinsic birefringence. From a melt of crystalline raw material, with controlled cooling and solidification, a crystal is generated. As the crystalline raw material, shards and/or waste from already-grown crystals is used, and the re-used raw material 1) upon visual observation in daylight has no color; and 2) upon illumination with a white-light lamp in a darkroom a) has no or at maximum a just barely perceivable reddish and/or bluish fluorescence; and b) has no or at maximum a just barely perceivable diffuse scattering; and c) has no or only slight discrete scattering of at maximum two visually perceivable scattering centers per dm3. In this way, crystals can be obtained which after tempering have a BSDF value of <7×10?7, an RMS homogeneity after the subtraction of 36 Zernike coefficients of <15×10?8, an SDR-RMS value in the 111 direction of <0.2 nm/cm.

Abstract: The method provides CaF2 single crystals with low scattering, small refractive index differences and few small angle grain boundaries, which can be tempered at elevated temperatures. In the method a CaF2 starting material is heat-treated for at least five hours at temperatures between 1000° C. and 1250° C. and then vaporized at a temperature of at least 1100° C. in a vacuum of at most 5*10?4 mbar to form a vapor. The vapor is condensed at a temperature between 500° C. to 1280° C. to form a condensate. Then a melt formed from the condensate is cooled in a controlled manner to obtain the single crystal, which is subsequently tempered. The method is preferably performed with a CaF2 starting material including waste material and cuttings from previously used melts.

Abstract: A synthetic quartz glass preform is produced by flame hydrolysis with subsequent cooling and is suitable for the application of high-energy DUV radiation in the wave length range under 250 nm. The preform has a core area which contains ?1150 ppm OH, a strain double refraction of ?5 nm/cm and a resistance to high-energy DUV radiation as a result of a transmission reduction of ?T ?0.1%/cm thickness. The quartz glass has been exposed to the following radiation: wavelength ?1=248 nm, laser shot frequency ?300 Hz, laser shot value ?109 and lumination ?10 mJ/cm2, and wavelength ?2=193 nm, laser shot frequency ?300 Hz, laser shot value ?109 and lumination <5 mJ/cm2. Apparatus for producing the preform comprises a horizontally positioned muffle with two different sized openings facing each other. The larger of the openings is for removing the preform, the smaller opening being for introducing a burner. The internal chamber of the muffle narrows from the larger opening to the smaller opening.

Abstract: A process for manufacturing glass bodies of doped silicate glass is disclosed. The process involves flame hydrolysis, wherein precursors for the forming of the doped glass are fed together with fuel gases into a single burner. A first formed body is generated on a target. The doped silicate glass produced in this way offers a low density of defects and a small breadth of striae. Preferably the first formed body is subsequently formed into a second formed body having a larger breadth and a smaller length than the first formed body. Thereby, the breadth of striae and the density of defects in the doped silica glass is further reduced.

Abstract: A device for producing optically homogeneous, streak-free quartz glass bodies having a large diameter including a furnace or melting device having an inner chamber with a pair of openings opposite one another. One or more movable burners are displaceable into one of the openings and the respective glass body to be produced is located in the other opening. Both the burner and glass body are movably positioned. In the course of the production of the quartz glass body, a relative movement is effected in the axial and radial directions between the burner and the quartz glass body such that the distance from the burner outlet opening pertaining to the quartz glass body decreases as the distance from the burner to the X-X axis of the quartz glass body increases.

Abstract: A method produces homogenous quartz glass plates without streaks. The method is applied to starting quartz glass body which has an X—X geometrical axis and good refractive index homogeneity in its central area, and a refractive index homogeneity decreasing as the axis lies further from a central area. The body is divided into at least two concave parts by longitudinal cuts parallel to the axis once the central area has been processed out of the body. The parts are placed separately in corresponding molds and heated therein such that they are molded to form quartz glass plates having a desired thickness.

Abstract: For producing large volume optical components of high optical quality from synthetic quartz glass blanks, the latter are heated in a component mold in a furnace with a protective gas atmosphere to a temperature 50° to 170° K above the softening point, this temperature being held for 20 to 90 minutes and, during this holding time, the quartz glass blank being pressed into the component mold. By these means, a gentle treatment of the quartz glass, a good yield, a decrease in the energy input and a complete filling up of the component mold are achieved.