Patents by Inventor Andreas Norbert Wiswesser
Andreas Norbert Wiswesser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040058621Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: ApplicationFiled: July 8, 2003Publication date: March 25, 2004Inventors: Andreas Norbert Wiswesser, Walter Schoenleber
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Publication number: 20040033758Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.Type: ApplicationFiled: June 18, 2003Publication date: February 19, 2004Inventor: Andreas Norbert Wiswesser
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Patent number: 6659842Abstract: An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.Type: GrantFiled: August 14, 2001Date of Patent: December 9, 2003Assignee: Applied Materials Inc.Inventors: Andreas Norbert Wiswesser, Judon Tony Pan, Buguslaw Swedek, Manoocher Birang
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Patent number: 6652355Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.Type: GrantFiled: June 4, 2001Date of Patent: November 25, 2003Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Judon Tony Pan, Boguslaw Swedek
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Patent number: 6632124Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.Type: GrantFiled: January 10, 2003Date of Patent: October 14, 2003Assignee: Applied Materials Inc.Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
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Patent number: 6607422Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: GrantFiled: September 25, 2000Date of Patent: August 19, 2003Assignee: Applied Materials, Inc.Inventors: Boguslaw Swedek, Andreas Norbert Wiswesser
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Publication number: 20030124956Abstract: A polishing solution is dispensed onto a polishing pad that has a polishing surface, a substrate is brought into contact with the polishing surface, relative motion is created between the substrate and the polishing pad, a light beam is directed through a window in the polishing pad to impinge the substrate, and an intensity of a reflected light beam from the substrate is monitored. The polishing solution has a first refractive index, and the window has a second index of refraction that is approximately equal to the first index of refraction.Type: ApplicationFiled: December 28, 2001Publication date: July 3, 2003Applicant: APPLIED MATERIALS, INC.Inventors: Andreas Norbert Wiswesser, Boguslaw A. Swedek
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Publication number: 20030104761Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: ApplicationFiled: January 14, 2003Publication date: June 5, 2003Applicant: Applied Materials, Inc., a Delaware corporationInventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
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Publication number: 20030104760Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.Type: ApplicationFiled: January 10, 2003Publication date: June 5, 2003Applicant: Applied Materials, Inc. a Delaware corporationInventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
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Patent number: 6524165Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: GrantFiled: October 23, 2000Date of Patent: February 25, 2003Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek
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Patent number: 6506097Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.Type: GrantFiled: January 16, 2001Date of Patent: January 14, 2003Assignee: Applied Materials, Inc.Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
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Publication number: 20030003845Abstract: An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.Type: ApplicationFiled: January 16, 2001Publication date: January 2, 2003Inventors: Bret W. Adams, Boguslaw A. Swedek, Rajeev Bajaj, Savitha Nanjangud, Andreas Norbert Wiswesser, Stan D. Tsai, David A. Chan, Fred C. Redeker, Manoocher Birang
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Patent number: 6494766Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.Type: GrantFiled: October 23, 2000Date of Patent: December 17, 2002Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Wallter Waiter Schoenleber, Boguslaw Swedek
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Publication number: 20020013120Abstract: An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.Type: ApplicationFiled: August 14, 2001Publication date: January 31, 2002Applicant: Applied Materials, a Delaware corporationInventors: Andreas Norbert Wiswesser, Judon Tony Pan, Buguslaw Swedek, Manoocher Birang
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Publication number: 20010036793Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.Type: ApplicationFiled: June 4, 2001Publication date: November 1, 2001Applicant: Applied Materials, Inc., a Delaware corporationInventors: Andreas Norbert Wiswesser, Judon Tony Pan, Boguslaw Swedek
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Publication number: 20010027080Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: ApplicationFiled: May 8, 2001Publication date: October 4, 2001Applicant: Applied Materials, Inc., Delaware corporationInventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek, Manoocher Birang
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Patent number: 6296548Abstract: An apparatus, as well as a method, brings a surface of a substrate into contact with a polishing pad that has a window, causes relative motion between the substrate and the polishing pad, and directs a light beam through the window so that the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate. Light beam reflections from the substrate are detected, and used to determine polishing parameters, detect process repeatability, and qualify processes.Type: GrantFiled: June 8, 2000Date of Patent: October 2, 2001Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Judon Tony Pan, Boguslaw Swedek, Manoocher Birang
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Patent number: 6280289Abstract: An apparatus, as well as a method, determines an endpoint of chemical mechanical polishing a metal layer on a substrate. The method of the apparatus includes bringing a surface of a substrate into contact with a polishing pad that has a window; causing relative motion between the substrate and the polishing pad; directing a light beam through the window, the motion of the polishing pad relative to the substrate causing the light beam to move in a path across the substrate; detecting light beam reflections from the substrate and a retaining ring; generating reflection data associated with the light beam reflections; dividing the reflection data into a plurality of radial ranges; and identifying the predetermined pattern from the reflection data in the plurality of radial ranges to establish the endpoint.Type: GrantFiled: November 2, 1998Date of Patent: August 28, 2001Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Judon Tony Pan, Boguslaw Swedek
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Patent number: 6247998Abstract: A chemical mechanical polishing apparatus includes a platen to support a polishing pad, and a polishing head to hold a substrate against the polishing pad during processing. The substrate includes a thin film structure disposed on a wafer. A first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. A second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: GrantFiled: January 25, 1999Date of Patent: June 19, 2001Assignee: Applied Materials, Inc.Inventors: Andreas Norbert Wiswesser, Walter Schoenleber, Boguslaw Swedek, Manoocher Birang
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Patent number: 6190234Abstract: A chemical mechanical polishing apparatus includes two optical systems which are used serially to determine polishing endpoints. The first optical system includes a first light source to generate a first light beam which impinges on a surface of the substrate, and a first sensor to measure light reflected from the surface of the substrate to generate a measured first interference signal. The second optical system includes a second light source to generate a second light beam which impinges on a surface of the substrate and a second sensor to measure light reflected from the surface of the substrate to generate a measured second interference signal. The second light beam has a wavelength different from the first light beam.Type: GrantFiled: April 27, 1999Date of Patent: February 20, 2001Assignee: Applied Materials, Inc.Inventors: Boguslaw Swedek, Andreas Norbert Wiswesser