Patents by Inventor ANDREAS PETER ENGELHARDT

ANDREAS PETER ENGELHARDT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting semiconductor devices with getter layer
    Patent number: 10361531
    Abstract: The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100).
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: July 23, 2019
    Assignee: PHILIPS PHOTONICS GMBH
    Inventors: Ulrich Weichmann, Andreas Peter Engelhardt, Johanna Sophie Kolb, Marcel Franz Christian Schemmann, Holger Moench
  • LIGHT EMITTING SEMICONDUCTOR DEVICES WITH GETTER LAYER
    Publication number: 20170063031
    Abstract: The invention describes a light emitting semiconductor device (100) comprising a substrate (120), a light emitting layer structure (155) and an AlGaAs getter layer (190) for reducing an impurity in the light emitting layer structure (155), the light emitting layer structure (155) comprising an active layer (140) and layers of varying Aluminum content, wherein the growth conditions of the layers of the light emitting layer structure (155) comprising Aluminum are different in comparison to the growth conditions of the AlGaAs getter layer (190). The AlGaAs getter layer (190) enables a reduction of the concentration of impurities like Sulfur etc. in the gas phase of a deposition equipment or growth reactor. The reduction of such impurities reduces the probability of incorporation of the impurities in the light emitting layer structure (155) which may affect the lifetime of the light emitting semiconductor device (100).
    Type: Application
    Filed: February 20, 2015
    Publication date: March 2, 2017
    Applicant: KONINKLIJKE PHILIPS N.V.
    Inventors: ULRICH WEICHMANN, ANDREAS PETER ENGELHARDT, JOHANNA SOPHIE KOLB, MARCEL FRANZ CHRISTIAN SCHEMMANN, HOLGER MOENCH