Abstract: The invention relates to a device and a method for producing layers whose layer thickness distribution can be adjusted in coating systems with horizontally rotating substrate. A very homogeneous or a specific non-homogeneous distribution can be adjusted. The particle loading is also significantly reduced. The service life is significantly higher compared to other methods. Forming of parasitic coatings is reduced.

Abstract: According to the invention, a device is provided for coating substrates having planar or shaped surfaces by means of magnetron sputtering, by means of which device surfaces having any shape, for examples lenses, aspheres or freeform surfaces which have an adjustable layer-thickness profile, can be coated such that a layer function is maintained on the substantially complete surface. A method for coating substrates having planar or shaped surfaces by means of magnetron sputtering is also provided.

Abstract: The invention relates to a device and a method for producing layers with very good uniformity in coating systems with horizontally rotating substrate guiding. Alternatively, certain layer thickness gradients can be set. The particle loading is also significantly reduced. The service life is much higher compared to other methods. Parasitic coatings are reduced. The coating rate is also increased.

Abstract: The invention relates to a new basic technology for magnetron sputtering of ceramic layers, in particular for optical applications. The new concept enables the construction of magnetron sputtering sources which, in comparison with the known methods, such as reactive DC-, MF- or RF magnetron sputtering or the magnetron sputtering of ceramic targets, enables significantly improved precision in the deposition of ceramic layers at an exactly defined rate and homogeneity and also with very good reproducibility.

Abstract: Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114

Abstract: A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.

Abstract: The invention relates to a magnetron coating system, comprising a first coating source, an auxiliary substrate, a magnetron and means for determining the area density of the auxiliary substrate. The auxiliary substrate is thereby arranged between the first coating source and the area that is provided to receive the substrate to be coated, and forms a cathode for the magnetron. The invention further relates to a method for depositing thin layers, in which a layer is deposited on an auxiliary substrate by means of a first coating source and this auxiliary substrate is used as a cathode for coating a substrate by means of a magnetron and the area density of the auxiliary substrate is determined.

Abstract: A method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated. In this method, first, a model of the coating chamber is formed which takes into consideration the changes of the chamber parameters caused by the movement of the substrate through the coating chamber. Subsequently, the particular position of the substrate within the coating chamber is acquired. The chamber parameters are subsequently set based on the position of the substrate according to the model of the coating chambers.

Abstract: The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).