Patents by Inventor Andreas PLOSSL

Andreas PLOSSL has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10833219
    Abstract: An epitaxial conversion element, a method for producing an epitaxial conversion element, a radiation emitting RGB unit and a method for producing a radiation emitting RGB unit are disclosed. In an embodiment an epitaxial conversion element includes a green converting epitaxial layer configured to convert electromagnetic radiation from a blue spectral range into electromagnetic radiation of a green spectral range and a red converting epitaxial layer configured to convert electromagnetic radiation from the blue spectral range into electromagnetic radiation of a red spectral range, wherein the green converting epitaxial layer and the red converting epitaxial layer are based on a phosphide compound semiconductor material, and wherein the green converting epitaxial layer and the red converting epitaxial layer are in different main extension planes which are parallel to each other.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: November 10, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Alexander Tonkikh, Andreas Plößl
  • Patent number: 10797469
    Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: October 6, 2020
    Assignee: OSRAM OLED GMBH
    Inventors: Hubert Halbritter, Andreas Plößl, Roland Heinrich Enzmann, Martin Rudolf Behringer
  • Publication number: 20200287111
    Abstract: The invention relates to a method for producing optoelectronic components. The invention comprises: provision of a metal substrate, the substrate having a front side and a rear side opposite the front side; front-side removal of substrate material such that the substrate comprises substrate sections protruding in the region of the front side and recesses arranged there between; formation of a plastic body adjacent to substrate sections; arrangement of optoelectronic semiconductor chips on substrate sections; rear-side removal of substrate material in the region of the recesses, such that the substrate is structured into separate substrate sections; and performance of a separation process. The plastic body is divided into separate substrate sections and individual optoelectronic components with at least one optoelectronic semiconductor chip are formed. The invention also relates to an optoelectronic component.
    Type: Application
    Filed: November 23, 2018
    Publication date: September 10, 2020
    Inventors: Thomas SCHWARZ, Andreas PLÖSSL, Jörg SORG
  • Publication number: 20200127181
    Abstract: A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.
    Type: Application
    Filed: April 18, 2018
    Publication date: April 23, 2020
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Martin Rudolf Behringer, Alexander F. Pfeuffer, Andreas Plößl, Georg Bogner, Berthold Hahn
  • Publication number: 20200091372
    Abstract: A method of producing a semiconductor component includes applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein the semiconductor body is grown on a growth substrate different from the auxiliary carrier, the first and the second lateral coefficient of thermal expansion differ by at most 50%, and the growth substrate is removed prior to application of the auxiliary carrier.
    Type: Application
    Filed: December 15, 2017
    Publication date: March 19, 2020
    Inventors: Andreas Plössl, Norwin von Malm, Dominik Scholz, Christoph Schwarzmaier, Martin Rudolf Behringer, Alexander F. Pfeuffer
  • Patent number: 10553148
    Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.
    Type: Grant
    Filed: November 11, 2016
    Date of Patent: February 4, 2020
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alexander Martin, Thomas Schwarz, Frank Singer, Andreas Plössl
  • Patent number: 10475778
    Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: November 12, 2019
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Alexander F. Pfeuffer, Norwin von Malm, Stefan Grötsch, Andreas Plößl
  • Publication number: 20190333898
    Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.
    Type: Application
    Filed: January 12, 2018
    Publication date: October 31, 2019
    Inventors: Andreas Plößl, Siegfried Herrmann, Martin Rudolf Behringer, Frank Singer, Thomas Schwarz, Alexander F. Pfeuffer
  • Publication number: 20190245326
    Abstract: A semiconductor laser and a method for producing such a semiconductor laser are disclosed. In an embodiment a semiconductor laser has at least one surface-emitting semiconductor laser chip including a semiconductor layer sequence having at least one active zone configured to generate laser radiation and a light exit surface oriented perpendicular to a growth direction of the semiconductor layer sequence. The laser further includes a diffractive optical element configured to expand and distribute the laser radiation, wherein an optically active structure of the diffractive optical element is made of a material having a refractive index of at least 1.65 regarding a wavelength of maximum intensity of the laser radiation; and a connector engaging at least in places into the optically active structure and completely filling the optically active structure at least in places.
    Type: Application
    Filed: January 9, 2018
    Publication date: August 8, 2019
    Inventors: Hubert Halbritter, Andreas Plößl, Roland Heinrich Enzmann, Martin Rudolf Behringer
  • Publication number: 20190221706
    Abstract: An epitaxial conversion element, a method for producing an epitaxial conversion element, a radiation emitting RGB unit and a method for producing a radiation emitting RGB unit are disclosed. In an embodiment an epitaxial conversion element includes a green converting epitaxial layer configured to convert electromagnetic radiation from a blue spectral range into electromagnetic radiation of a green spectral range and a red converting epitaxial layer configured to convert electromagnetic radiation from the blue spectral range into electromagnetic radiation of a red spectral range, wherein the green converting epitaxial layer and the red converting epitaxial layer are based on a phosphide compound semiconductor material, and wherein the green converting epitaxial layer and the red converting epitaxial layer are in different main extension planes which are parallel to each other.
    Type: Application
    Filed: January 18, 2019
    Publication date: July 18, 2019
    Inventors: Alexander Tonkikh, Andreas Plößl
  • Publication number: 20180322824
    Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.
    Type: Application
    Filed: November 11, 2016
    Publication date: November 8, 2018
    Inventors: Alexander Martin, Thomas Schwarz, Frank Singer, Andreas Plössl
  • Publication number: 20180287008
    Abstract: A method for producing an optoelectronic semiconductor component and an optoelectronic semiconductor component are disclosed. In an embodiment the method include A) providing at least two source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chip; B) providing a target substrate having a mounting plane, the mounting plane being configured for mounting the semiconductor chip; and C) transferring at least part of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips, within one type, maintain their relative position with respect to one another, so that each type of semiconductor chips arranged on the target substrate has a different height above the mounting plane, wherein the semiconductor chips are at least one of at least partially stacked one above the other or at least partially applied to at least one casting layer.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 4, 2018
    Inventors: Andreas Plößl, Siegfried Herrmann, Martin Rudolf Behringer, Frank Singer, Thomas Schwarz
  • Publication number: 20180151548
    Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed.
    Type: Application
    Filed: May 24, 2016
    Publication date: May 31, 2018
    Inventors: Alexander F. Pfeuffer, Norwin von Malm, Stefan Grötsch, Andreas Plößl
  • Publication number: 20170271438
    Abstract: A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.
    Type: Application
    Filed: June 6, 2017
    Publication date: September 21, 2017
    Inventors: Ewald Karl Michael Günther, Andreas Plössl, Heribert Zull, Thomas Veit, Mathias Kämpf, Jens Dennemarck, Bernd Böhm, Korbinian Perzlmaier
  • Patent number: 9721940
    Abstract: A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: August 1, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Andreas Plössl, Heribert Zull
  • Patent number: 9634155
    Abstract: The invention relates to a method for producing an electrical terminal support for an optoelectronic semiconductor body, comprising the following steps: providing a carrier assembly (1), which comprises a carrier body (11), an intermediate layer (12) arranged on an outer surface (111) of the carrier body (11), and a use layer (13) arranged on the intermediate layer (12); introducing at least two openings (4), which are mutually spaced in the lateral direction (L), in the use layer (13) via an outer surface (131) of the use layer (13), wherein the openings extend completely through the use layer (13) in the vertical direction (V); electrically insulating lateral surfaces (41) of the openings (4) and of the outer face (131) of the use layer (13); arranging electrically conductive material (6) at least in the openings (4), wherein after completion of the terminal carrier (100), the electrically conductive material (6) has an interruption (U) in the progression thereof along the outer surface (131) of the use lay
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: April 25, 2017
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventor: Andreas Plössl
  • Publication number: 20160247966
    Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
    Type: Application
    Filed: May 2, 2016
    Publication date: August 25, 2016
    Inventors: Matthias SABATHIL, Andreas PLÖßL, Hans-Jürgen LUGAUER, Alexander LINKOV, Patrick RODE
  • Publication number: 20160218097
    Abstract: A radiation-emitting semiconductor chip having a semiconductor body including a semi-conductor layer sequence having an active region that generates radiation, a first semiconductor layer of a first conductor, and a second semiconductor layer of a second conductor different from the first conductor, and having a carrier on which the semiconductor body is arranged, wherein a pn junction is formed in the carrier, the carrier has a first contact and a second contact on a rear side facing away from the semiconductor body, and the active area and the pn junction connect to one another in antiparallel in relation to the forward-bias direction by the first contact and the second contact.
    Type: Application
    Filed: August 29, 2014
    Publication date: July 28, 2016
    Inventors: Andreas PLÖSSL, Heribert ZULL
  • Patent number: 9368698
    Abstract: A converter plate adapted to be attached to a radiation-emitting semiconductor chip, the converter plate containing a base material made of glass in which a plurality of openings is arranged, in each of which a converter material is installed.
    Type: Grant
    Filed: August 16, 2012
    Date of Patent: June 14, 2016
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventor: Andreas Plössl
  • Publication number: 20160111615
    Abstract: An optoelectronic semiconductor chip includes a semiconductor body that has a semiconductor layer sequence and at least one opening that extends through a second semiconductor layer into a first semiconductor layer. The chip also includes a support, which includes at least one recess, and a metallic connecting layer between the semiconductor body and the support. The metallic connecting layer includes a first region and a second region. The first region is connected to the first semiconductor layer in an electrically conductive manner through the opening and the second region is connected to the second semiconductor layer in an electrically conductive manner. A first contact is connected to the first region in an electrically conductive manner through the recess or a second contact is connected to the second region in an electrically conductive manner through the recess.
    Type: Application
    Filed: May 28, 2014
    Publication date: April 21, 2016
    Inventors: Norwin von Malm, Andreas Plößl