Patents by Inventor Andreas R. Ott

Andreas R. Ott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Replacement gate approach for high-k metal gate stacks by using a multi-layer contact level
    Patent number: 8748302
    Abstract: In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having superior gap filling capabilities and a second interlayer dielectric material that provides high etch resistivity and robustness during a planarization process. In this manner, undue material erosion upon replacing the placeholder material may be avoided, which results in reduced yield loss and superior device uniformity.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: June 10, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Christopher M. Prindle, Johannes F. Groschopf, Andreas R. Ott
  • Replacement Gate Approach for High-K Metal Gate Stacks by Using a Multi-Layer Contact Level
    Publication number: 20130214335
    Abstract: In a replacement gate approach, the dielectric material for laterally encapsulating the gate electrode structures may be provided in the form of a first interlayer dielectric material having superior gap filling capabilities and a second interlayer dielectric material that provides high etch resistivity and robustness during a planarization process. In this manner, undue material erosion upon replacing the placeholder material may be avoided, which results in reduced yield loss and superior device uniformity.
    Type: Application
    Filed: February 21, 2012
    Publication date: August 22, 2013
    Applicant: GLOBALFOUNDRIES INC.
    Inventors: Christopher M. Prindle, Johannes F. Groschopf, Andreas R. Ott