Abstract: The invention relates to an LED package for UV light comprising an optoelectronic device which, in particular as a volume emitter, is designed to emit light in the ultraviolet spectrum during operation. The component is arranged on a carrier with two contact pads for electrical contacting. Furthermore, a frame surrounding the component and arranged on the carrier is provided with a gas-impermeable outlet region lying in a main radiation direction, so that a hermetically sealed cavity comprising an inner region of the carrier is formed, the side walls of the frame facing the optoelectronic device being bevelled and opening towards the main radiation direction. An ESD protection element arranged outside the inner area on the carrier is electrically connected to at least one of the two contact pads.

Abstract: In an embodiment an optoelectronic semiconductor device includes an optoelectronic semiconductor chip configured to generate radiation and attached to a mounting side of a carrier and an encapsulation body at least partially transparent to the radiation, wherein the carrier is composed of a plurality of separate, metallic lead frame parts and of a potting body, the potting body holding the lead frame parts together, wherein the lead frame parts project beyond the potting body at the mounting side, wherein an attachment side of the carrier is opposite the mounting side so that the mounting side is further away from the attachment side than sides of the potting body facing away from the attachment side, wherein, as seen in a plan view of the attachment side, the potting body projects over the lead frame parts on all sides.

Abstract: In an embodiment an optoelectronic component includes at least one optoelectronic semiconductor chip, at least one optical element and an intermediate layer between the at least one optoelectronic semiconductor chip and the at least one optical element, wherein the intermediate layer is configured to attach the at least one optoelectronic semiconductor chip to the at least one optical element, wherein the at least one optical element comprises a material that is transparent to radiation of a second wavelength range, wherein the intermediate layer comprises a material that is absorbent to the radiation of the second wavelength range, and wherein the intermediate layer is free from an organic material.

Abstract: An optoelectronic component includes a carrier, at least one optoelectronic semiconductor chip, which is arranged on the carrier, and a housing which comprises a molded body. The housing at least partially surrounds the optoelectronic semiconductor chip. A reflective layer is arranged on at least one side surface of the optoelectronic semiconductor chip, and the carrier includes vias.

Abstract: A radiation-emitting device includes a carrier formed to include sapphire and/or AlN. A semiconductor layer sequence is applied onto the carrier. A radiation outcoupling layer is arranged on the side of the carrier facing away from the semiconductor layer sequence, wherein the semiconductor layer sequence includes an active region for generating electromagnetic radiation, and wherein the radiation outcoupling layer has a refractive index for the electromagnetic radiation generated by the active region which is between the refractive index of the carrier and the refractive index of the medium surrounding the component. The radiation outcoupling layer is based on quartz glass. Furthermore, a method for manufacturing an optoelectronic device is disclosed.

Abstract: In an embodiment an optoelectronic package includes a carrier substrate having at least two through vias filled with an electrically conductive material, at least one optoelectronic component arranged on the carrier substrate, wherein the at least one optoelectronic component is configured to generate light in an ultraviolet range, and wherein the at least one optoelectronic component has at least two connection regions, each of which is electrically coupled to one of the two electrically conductive vias and a package material surrounding the at least one optoelectronic component, wherein the package material is based on a fluoropolymer and covers side surfaces of the at least one optoelectronic component at least in regions, and wherein a top surface of the at least one optoelectronic component opposite the connection regions remains free of the package material.

Abstract: A radiation-emitting component is specified with a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: A component comprising a plurality of semiconductor chips and a carrier is disclosed, wherein the carrier has a common metallic carrier layer with a mounting surface on which the semiconductor chips are arranged. The semiconductor chips are thermally but not electrically conductively connected to the common metallic carrier layer. The carrier has a plurality of contact layers, which are arranged next to one another and next to the common carrier layer in lateral directions and are configured for electrically contacting the component and thus for electrically contacting the semiconductor chips. The carrier has an electrically insulating housing material which holds the common metallic carrier layer and the contact layers together, wherein the common metallic carrier layer and the contact layers are adjacent to the housing material and are electrically insulated from one another by the electrically insulating housing material.

Abstract: The invention relates to an optoelectronic component having: a carrier; an optoelectronic semiconductor chip; an insulation layer, which has an electrically insulating material; and a first contact layer, which has an electrically conductive material. According to the invention, the insulation layer is arranged on the carrier and has a cavity; the semiconductor chip is arranged in the cavity; the first contact layer is arranged between the semiconductor chip and the carrier and between the insulation layer and the carrier; and the first contact layer has at least one interruption, such that the carrier is free of the first contact layer at least in some parts in the region of the cavity.

Abstract: The invention relates to an optoelectronic component having: a carrier; an optoelectronic semiconductor chip; an insulation layer, which has an electrically insulating material; and a first contact layer, which has an electrically conductive material. According to the invention, the insulation layer is arranged on the carrier and has a cavity; the semiconductor chip is arranged in the cavity; the first contact layer is arranged between the semiconductor chip and the carrier and between the insulation layer and the carrier; and the first contact layer has at least one interruption, such that the carrier is free of the first contact layer at least in some parts in the region of the cavity.

Abstract: In an embodiment an optoelectronic semiconductor device includes an optoelectronic semiconductor chip configured to generate radiation and attached to a mounting side of a carrier and an encapsulation body at least partially transparent to the radiation, wherein the carrier is composed of a plurality of separate, metallic lead frame parts and of a potting body, the potting body holding the lead frame parts together, wherein the lead frame parts project beyond the potting body at the mounting side, wherein an attachment side of the carrier is opposite the mounting side so that the mounting side is further away from the attachment side than sides of the potting body facing away from the attachment side, wherein, as seen in a plan view of the attachment side, the potting body projects over the lead frame parts on all sides.

Abstract: The invention relates to an LED package for UV light comprising an optoelectronic device which, in particular as a volume emitter, is designed to emit light in the ultraviolet spectrum during operation. The component is arranged on a carrier with two contact pads for electrical contacting. Furthermore, a frame surrounding the component and arranged on the carrier is provided with a gas-impermeable outlet region lying in a main radiation direction, so that a hermetically sealed cavity comprising an inner region of the carrier is formed, the side walls of the frame facing the optoelectronic device being bevelled and opening towards the main radiation direction. An ESD protection element arranged outside the inner area on the carrier is electrically connected to at least one of the two contact pads.

Abstract: The invention relates to an LED package for UV light comprising an optoelectronic device which, in particular as a volume emitter, is designed to emit light in the ultraviolet spectrum during operation. The component is arranged on a carrier with two contact pads for electrical contacting. Furthermore, a frame surrounding the component and arranged on the carrier is provided with a gas-impermeable outlet region lying in a main radiation direction, so that a hermetically sealed cavity comprising an inner region of the carrier is formed, the side walls of the frame facing the optoelectronic device being beveled and opening towards the main radiation direction. An ESD protection element arranged outside the inner area on the carrier is electrically connected to at least one of the two contact pads.

Abstract: A method for producing optoelectronic semiconductor components may include applying optoelectronic semiconductor chips for generating radiation to a carrier, producing a potting around the semiconductor chips with a potting top side facing away from the carrier such that the semiconductor chips remain free of a reflective potting material. The potting has trenches between the semiconductor chips, and the trenches are arranged at a distance from the semiconductor chips; the trenches do not touch the semiconductor chips. The method may further include filling the trenches with a supporting material to form at least one supporting body and leaving the potting alongside the trenches free of the supporting material.

Abstract: An electronic semiconductor component with a housing structure and a cavity introduced into the housing structure is specified. The cavity comprises a base surface. Furthermore, the electronic semiconductor component comprises an auxiliary layer arranged on the base surface of the cavity and a marking penetrating the auxiliary layer at least as far as the base surface of the cavity. The marking comprises an optical contrast that depends on both an optical property of the housing structure and an optical property of the auxiliary layer. Furthermore, a method for producing an electronic semiconductor component is given.

Abstract: A radiation-emitting component is specified with—a carrier which has a top surface a radiation-emitting semiconductor chip arranged on the top surface of the carrier and configured to generate primary electromagnetic radiation, a first reflector layer arranged above a top surface of the semiconductor chip, and a cover body arranged between the first reflector layer and the radiation-emitting semiconductor chip, wherein a side surface of the cover body is inclined to the top surface of the carrier. Furthermore, a method for producing such a radiation-emitting component is specified.

Abstract: The invention relates to an optoelectronic semiconductor component (20) comprising a carrier comprising an integrated circuit, an optoelectronic semiconductor chip (22) which is arranged on the carrier (21), a molded body which surrounds the carrier at least in places in lateral directions and which covers the carrier in places on a side facing away from the optoelectronic semiconductor chip, and at least two through-connections which extend from an underside of the semiconductor component facing away from the optoelectronic semiconductor chip through the molded body to the carrier, and which comprise an electrically conductive material, the integrated circuit being provided for actuating and/or controlling the optoelectronic semiconductor chip. The invention also relates to a method of manufacturing an optoelectronic semiconductor component.

Abstract: An electronic semiconductor component with a housing structure and a cavity introduced into the housing structure is specified. The cavity comprises a base surface. Furthermore, the electronic semiconductor component comprises an auxiliary layer arranged on the base surface of the cavity and a marking penetrating the auxiliary layer at least as far as the base surface of the cavity. The marking comprises an optical contrast that depends on both an optical property of the housing structure and an optical property of the auxiliary layer. Furthermore, a method for producing an electronic semiconductor component is given.

Abstract: The invention relates to an optoelectronic component having: a carrier; an optoelectronic semiconductor chip; an insulation layer, which has an electrically insulating material; and a first contact layer, which has an electrically conductive material. According to the invention, the insulation layer is arranged on the carrier and has a cavity; the semiconductor chip is arranged in the cavity; the first contact layer is arranged between the semiconductor chip and the carrier and between the insulation layer and the carrier; and the first contact layer has at least one interruption, such that the carrier is free of the first contact layer at least in some parts in the region of the cavity.