Abstract: Memory units that have a magnetic tunnel junction cell that utilizes spin torque and a current induced magnetic field to assist in the switching of the magnetization orientation of the free layer of the magnetic tunnel junction cell. The memory unit includes a spin torque current source for passing a current through the magnetic tunnel junction cell, the spin torque current source having a direction perpendicular to the magnetization orientations, and also includes a magnetic ampere field current source is oriented in a direction orthogonal or at some angles to the magnetization orientations.

Abstract: Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track.

Abstract: A single annealing process simultaneously creates local areas of ferroelectric imprint that can be used as markers, and areas with low leakage current that exhibit ideal symmetric switching on ferroelectric recording media.

Abstract: A method for improving the stability of ferroelectric storage devices comprises: providing a ferroelectric storage medium including a film of ferroelectric material; and repeatedly applying a voltage to the film of ferroelectric material to improve the stability of polarized bits in the film of ferroelectric material. An apparatus that is used to perform the method is also provided.

Abstract: An apparatus comprises a ferroelectric storage medium, and a transducer for reading data from the ferroelectric storage medium and for writing data to the ferroelectric storage medium, wherein the transducer includes a substrate and a probe coupled to the substrate, wherein the probe includes a conductive element and a bilayer structure causing the probe to bend toward the ferroelectric storage medium.