Abstract: The invention relates to devices for the sequential testing of filters comprising couplers for connection to the filter to be tested, a first assembly having an aerosol generator and a first measuring device for determining the aerosol concentration of the air, and a second assembly having a device for sucking in air in connection with a second measuring device for determining the aerosol concentration of the air downstream of the filter. The devices are distinguished, in particular, by a short preparation time and a short postprocessing time during the measurement time of the filter to be tested. For this purpose, the raw gas-side coupler is connected to a non-return valve. Furthermore, the first assembly is connected to the raw gas-side coupler via a first shut-off valve, the second assembly is connected to the clean gas-side coupler via a second shut-off valve and the actuating devices of the shut-off valves are connected to a control device.

Abstract: The invention relates to devices for aerosol generation comprising a container holding a liquid, an aerosol generator having a supply container holding the liquid, and an apparatus for conditioning the aerosol of the aerosol generator, said apparatus having a collection container for liquid and an outlet for the aerosol, in a series connection, wherein the aerosol generator is connected to a pressurized gas generator. The invention also relates to uses of such devices. Said devices and uses are characterized in particular by interruption-free operation. For this purpose, the collection container is connected to the aerosol generator via a first non-return valve in the passage direction and via a first jet pump, wherein the opening pressure of the first non-return valve is smaller than the pressure that can be achieved by the first jet pump.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 ?m.

Abstract: A method of manufacturing a connection structure may include forming an opening in a first main surface of a first substrate, forming a galvanic seed layer over a first main surface of a carrier substrate, and connecting the first main surface of the first substrate to the first main surface of the carrier substrate, such that the galvanic seed layer is arranged between the first main surface of the first substrate and the first main surface of the carrier substrate. The method may further include galvanically forming a conductive material over the galvanic seed layer.

Abstract: An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Abstract: A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength ?dom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength ?dom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength ?dom1 of the first active layer and the second dominant wavelength ?dom2 of the second active layer are different from each other.

Abstract: Provided is an optoelectronic semiconductor chip including a semiconductor layer sequence in which an active zone for generating radiation is located between a first semiconductor region and a second semiconductor region. A first electrical contact of the semiconductor layer sequence is applied to the first semiconductor region. A second electrical contact is applied to the second semiconductor region. The second electrical contact is located in a trench of the second semiconductor region. The trench is restricted to the second semiconductor region and ends at a distance from the active zone. A distance between a bottom of the trench and the active zone is at most 3 ?m.

Abstract: Devices to determine the filtration behavior of a device for filtering gaseous fluid. These devices are characterized by unchanged reproducibility during further tests. To this end, the device comprises a first device for setting a particular differential pressure, a second device having a certain degree of filtration efficiency of the gaseous fluid, which flows through the devices, of the filter test system such that a differential pressure and/or filtration efficiency are adjustable in a variable fashion and independently of one another, and the first device (2) and the second device (3) are normal for filtration, with permanently constant characteristics with regard to the differential pressure that is set and the filtration efficiency that is set as a reference device for simulation of a filtering separator, a first adapter for coupling on the inflow side, and a second adapter for coupling on the outflow side.

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a p-doped region, an active region configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor chip, an n-doped region, a cover layer and a barrier region. The active region is arranged between the p-doped region and the n-doped region in a vertical direction, wherein the active region is based on a III-V semiconductor compound and the barrier region includes gallium, wherein the barrier region is configured to inhibit penetration of defects into the active region, and wherein the cover layer is arranged on the barrier region, the cover layer having a structured surface.

Abstract: A luminescence diode and a method for producing a luminescence diode are disclosed. In an embodiment a luminescence diode includes a carrier substrate, a first semiconductor layer sequence including a first active layer suitable for emitting radiation having a first dominant wavelength ?dom1 and a second semiconductor layer sequence including a second active layer suitable for emitting radiation having a second dominant wavelength ?dom2, wherein the first semiconductor layer sequence and the second semiconductor layer sequence are arranged side by side on the carrier substrate, and wherein the first dominant wavelength ?dom1 of the first active layer and the second dominant wavelength ?dom2 of the second active layer are different from each other.

Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a p-type semiconductor region (4), an n-type semiconductor region (6), and an active layer arranged between the p-type semiconductor region (4) and the n-type semiconductor region (6), said active layer being designed as a multiple quantum well structure (5), wherein the multiple quantum well structure (5) comprises quantum well layers (53) and barrier layers (51), wherein the barrier layers (51) are doped, and wherein undoped intermediate layers (52, 54) are arranged between the quantum well layers (53) and the barrier layers (51). Furthermore, a method for producing the optoelectronic semiconductor chip (10) is specified.

Abstract: An optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, an active layer disposed between the p-type semiconductor region and the n-type semiconductor region and formed as a multiple quantum well structure and having alternating quantum well layers and barrier layers, the quantum well layers emitting a first radiation in a first wavelength range, and at least one further quantum well layer disposed outside the multiple quantum well structure that emits a second radiation in a second wavelength range, wherein the first wavelength range is in an infrared spectral range invisible to a human eye, and the second wavelength range includes wavelengths at least partially visible to the human eye.

Abstract: Devices to determine the filtration behavior of a device for filtering gaseous fluid. These devices are characterized by unchanged reproducibility during further tests. To this end, the device comprises a first device for setting a particular differential pressure, a second device having a certain degree of filtration efficiency of the gaseous fluid, which flows through the devices, of the filter test system such that a differential pressure and/or filtration efficiency are adjustable in a variable fashion and independently of one another, and the first device (2) and the second device (3) are normal for filtration, with permanently constant characteristics with regard to the differential pressure that is set and the filtration efficiency that is set as a reference device for simulation of a filtering separator, a first adapter for coupling on the inflow side, and a second adapter for coupling on the outflow side.

Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a p-doped region, an active region configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor chip, an n-doped region, a cover layer and a barrier region. The active region is arranged between the p-doped region and the n-doped region in a vertical direction, wherein the active region is based on a III-V semiconductor compound and the barrier region includes gallium, wherein the barrier region is configured to inhibit penetration of defects into the active region, and wherein the cover layer is arranged on the barrier region, the cover layer having a structured surface.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (EQW2) that is less than the electronic band gap (EQW1) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (EB2) that is greater than the electronic band gap (EB1) of the first barrier layers.

Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a p-type semiconductor region (4), an n-type semiconductor region (6), and an active layer arranged between the p-type semiconductor region (4) and the n-type semiconductor region (6), said active layer being designed as a multiple quantum well structure (5), wherein the multiple quantum well structure (5) comprises quantum well layers (53) and barrier layers (51), wherein the barrier layers (51) are doped, and wherein undoped intermediate layers (52, 54) are arranged between the quantum well layers (53) and the barrier layers (51). Furthermore, a method for producing the optoelectronic semiconductor chip (10) is specified.

Abstract: An optoelectronic semiconductor body includes a carrier, a semiconductor layer sequence having a first layer of a first conductivity type, a second layer of a second conductivity type and an active layer, wherein the first layer faces the carrier and the active layer generates or absorbs electromagnetic radiation when operated in its intended operation mode, and at least one through-via extending from the carrier right through the first layer and the active layer and at least partly through the second layer, wherein, when in operation, second charge carriers are injected via the through-via into the second layer, in a region of the active layer and the first layer the through-via is completely surrounded laterally by a continuous and contiguous bed of the active layer and the first layer, the through-via is formed from a semiconductor material, and the carrier is a growth substrate for the semiconductor layer sequence.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (EQW2) that is less than the electronic band gap (EQW1) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (EB2) that is greater than the electronic band gap (EB1) of the first barrier layers.

Abstract: A method for producing knitwear formed at least partially as single jersey knitwear with a perforated structure and a functional textile based on the knitwear, provide very fine knitting stitches and perforated structures with large holes meeting demands of sportswear and underwear. The knitwear is produced on a double jersey knitting machine with first and second oppositely disposed needle carriers and a machine gauge of >24 needles/inch. The first needle carrier has a needle number/inch of latch-type needles corresponding to the machine gauge and the second needle carrier has transfer needles. The needle number/inch of the transfer needles is at most half that of the latch-type needles of the first needle carrier. The transfer needles form loop accumulations with at least one tuck loop per hole subsequently transferred with or without at least one knitting stitch from the transfer needles onto the latch-type needles.

Abstract: A method for producing knitwear formed at least partially as single jersey knitwear with a perforated structure and a functional textile based on the knitwear, provide very fine knitting stitches and perforated structures with large holes meeting demands of sportswear and underwear. The knitwear is produced on a double jersey knitting machine with first and second oppositely disposed needle carriers and a machine gauge of >24 needles/inch. The first needle carrier has a needle number/inch of latch-type needles corresponding to the machine gauge and the second needle carrier has transfer needles. The needle number/inch of the transfer needles is at most half that of the latch-type needles of the first needle carrier. The transfer needles form loop accumulations with at least one tuck loop per hole subsequently transferred with or without at least one knitting stitch from the transfer needles onto the latch-type needles.