Patents by Inventor ANDREAS RUEDIGER

ANDREAS RUEDIGER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric tunnel junction and method of fabrication thereof
    Patent number: 10056394
    Abstract: A method for fabricating a ferroelectric tunnel junction, comprising growing a hafnium zirconium oxide film barrier layer by sputtering in the presence of oxygen at a temperature of at most 425° C., on a conductive material as a bottom electrode, and depositing a conductive material as a top electrode.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: August 21, 2018
    Assignees: INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE, PLASMIONIQUE INC.
    Inventors: Andreas Ruediger, Fabian Ambriz-Vargas, Gitanjali Kolhatkar, Reji Thomas, Azza Hadj Youssef, Rafik Nouar, Andranik Sarkissian, Marc-André Gauthier
  • Combined Pn junction and bulk photovoltaic device
    Patent number: 8907205
    Abstract: A solar cell comprising a semiconductor solar cell of a first band gap; a buffer layer formed on a surface of the semiconductor solar cell; and at least one layer of a multiferroic or a ferroelectric material formed on the buffer layer; wherein the at least one layer of a multiferroic or a ferroelectric material has a second bang gap, the first band gap being smaller than the second band gap.
    Type: Grant
    Filed: June 16, 2011
    Date of Patent: December 9, 2014
    Assignee: Institut National de la Recherche Scientifique (INRS)
    Inventors: Riad Nechache, Andreas Ruediger, Federico Rosei
  • COMBINED PN JUNCTION AND BULK PHOTOVOLTAIC DEVICE
    Publication number: 20120017976
    Abstract: A solar cell comprising a semiconductor solar cell of a first band gap; a buffer layer formed on a surface of the semiconductor solar cell; and at least one layer of a multiferroic or a ferroelectric material formed on the buffer layer; wherein the at least one layer of a multiferroic or a ferroelectric material has a second bang gap, the first band gap being smaller than the second band gap.
    Type: Application
    Filed: June 16, 2011
    Publication date: January 26, 2012
    Applicant: Institut national de la recherche scientifique (INRS)
    Inventors: RIAD NECHACHE, ANDREAS RUEDIGER, FEDERICO ROSEI