Abstract: A rotor segment of a segmented generator, in particular of a permanently excited segmented rotary generator, of a wind turbine, comprises a magnet carrier segment with a rotor circumferential face, in particular a rotor external circumferential face, which in a circumferential direction extends between a first and second separation interface by way of a segment length; the rotor circumferential face having a first separation interface portion having a first length proceeding from the first separation interface in the circumferential direction toward the second separation interface; and a second separation interface portion having a second length proceeding from the second separation interface in the circumferential direction toward the first separation interface; and a connection portion having a third length extending between the first and second separation interface; wherein in each case a reinforcement device for reinforcing the magnet carrier segment is disposed on the rotor circumferential face in the re

Abstract: The present invention relates to a computer-implemented method for determining an ACTUAL delivery volume for a dosing pump (DP) intended for delivering a substance from a container (B), and which is further intended for use with an adjustment means for manually adjusting a TARGET delivery volume for use in a vehicle washing system (WA).

Abstract: A semiconductor wafer of single-crystal silicon has an oxygen concentration per new ASTM of not less than 5.0×1017 atoms/cm3 and not more than 6.5×1017 atoms/cm3; a nitrogen concentration per new ASTM of not less than 1.0×1013 atoms/cm3 and not more than 1.0×1014 atoms/cm3; a front side having a silicon epitaxial layer wherein the semiconductor wafer has BMDs whose mean size is not more than 10 nm determined by transmission electron microscopy and whose mean density adjacent to the epitaxial layer is not less than 1.0×1011 cm?3, determined by reactive ion etching after having subjected the wafer covered with the epitaxial layer to a heat treatment at a temperature of 780° C. for a period of 3 h and to a heat treatment at a temperature of 600° C. for a period of 10 h.

Abstract: Predicting a refill requirement for wash substances for performing a vehicle wash using a wash system for the car wash for performing the vehicle washing, wherein the control module is for providing a refill data set for predicting a refill requirement for washing substances. The control module comprises at least one measuring device for detecting current fill level data for each of the washing substances and a data link between the at least one measuring device and the control module for transmitting the detected fill level data to the control module. The control module is designed to perform a prediction function for calculating a refill data set, in which a prediction of the refill requirement is encoded, based on planning data, which represent planned vehicle washes at the washing system taking into account washing-substance-specific consumption data.

Abstract: A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295° C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800° C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300° C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Abstract: Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3; a resistivity of the substrate wafer of not less than 5 m?cm and not more than 10 m?cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Abstract: An apparatus and method for treating a plastic molded article. The apparatus includes a treatment chamber that can be closed and temperature-controlled. A vapor generating unit generates vapor of a treatment liquid. A fluid connection between the treatment chamber and the vapor generating unit feeds vapor to the treatment chamber and returns condensate back to the treatment chamber. A pressure equalizing device transfers waste air at atmospheric pressure and equalizes pressure with the atmospheric pressure during treatment. The pressure equalizing device retains vapor and prevents vapor from escaping into the atmosphere. A vapor phase is generated by heating a treatment liquid to its boiling point. The treatment liquid includes a solvent that dissolves or solubilizes the plastic. The article is exposed to the vapor phase for a predetermined time and removed from the vapor phase. Residual treatment liquid present on the article is removed.

Abstract: A method produces a single-crystal silicon semiconductor wafer. A single-crystal silicon substrate wafer is double side polished. A front side of the substrate wafer is chemical mechanical polished (CMP). An epitaxial layer of single-crystal silicon is deposited on the front side of the substrate wafer. A first rapid thermal anneal (RTA) treatment is performed on the coated substrate wafer at 1275-1295° C. for 15-30 seconds in argon and oxygen, having oxygen of 0.5-2.0 vol %. The coated substrate wafer is then cooled at or below 800° C., with 100 vol % argon. A second RTA treatment is performed on the coated substrate wafer at a 1280-1300° C. for 20-35 seconds in argon. An oxide layer is removed from a front side of the coated substrate wafer. The front side of the coated substrate wafer is polished by CMP.

Abstract: Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3; a resistivity of the substrate wafer of not less than 5 m?cm and not more than 10 m?cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Abstract: Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3; a resistivity of the substrate wafer of not less than 5 m?cm and not more than 10 m?cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Abstract: A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm?3 and not more than 4×109 cm?3, as determined by IR tomography.

Abstract: A high-pressure cleaning device, a cleaning dispersion, and a combination of a high-pressure cleaning device with a surface to be cleaned. The cleaning device cleans surfaces soiled by fine particles, particularly motor vehicle surfaces, and includes a high-pressure pump for delivering a cleaning product to a high-pressure jet nozzle. The cleaning product emerges in a high-pressure jet. The cleaning product includes a cleaning dispersion with a carrier fluid and solid cleaning particles having a density of between 0.8 g/cm3 and 3.5 g/cm3. Cleaning particles emerge from the high-pressure jet nozzle having a minimum kinetic energy of 1·10?10 J and a maximum kinetic energy of 2·10?4 J.

Abstract: Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery; a denuded zone which extends from the front side to a depth of not less than 20 ?m into the interior of the semiconductor wafer, where the density of vacancies in the denuded zone, determined by means of platinum diffusion and DLTS is not more than 1×1013 vacancies/cm3; a concentration of oxygen of not less than 4.5×1017 atoms/cm3 and not more than 5.5×1017 atoms/cm3; a region in the interior of the semiconductor wafer which adjoins the denuded zone and has nuclei which can be developed by means of a heat treatment into BMDs having a peak density of not less than 6.0×109/cm3, where the heat treatment comprises heating the semiconductor wafer to a temperature of 800° C. over a period of four hours and to a temperature of 1000° C. over a period of 16 hours. The wafers are produced by a unique RTA treatment of Nv wafers.

Abstract: A foam generator, in particular for a motor vehicle washing installation, includes a foam generation chamber having at least one inlet for water, surfactant and gas, in particular compressed gas, and one outlet for foam, and contains a fluid-permeable bed of loose particles. The bed fills the foam generation chamber sufficiently to prevent fluidization of the bed.

Abstract: A method for cleaning vehicles by means of which the formation of marks caused by drying is prevented. The method comprises a rinsing step using water. In the method, the anions forming poorly soluble salts with alkaline earth metals dissolved in water are removed from the water, while cations causing the water hardness are retained. Furthermore, a vehicle washing system includes: at least one application device for applying rinsing fluid to a vehicle to be cleaned; and an ion-exchange device for removing anions from the rinsing fluid prior to the application to the vehicle.

Abstract: An automatic generation of washing programs for an automatic vehicle washing installation is provided. For this purpose, a washing program generator with a washing program generation unit is provided. This includes an input interface for reading-in an equipment data set which represents how the washing installation is currently equipped with machine components, a processor unit for computation of a group of function blocks based on the equipment data set read-in via the input interface, a user interface which is intended for outputting the group of function blocks computed by the processor unit and is intended for detection of a selection of the output function blocks, wherein the processor unit is further intended to compute a washing program based on the detected selected function blocks for operation of the washing installation.

Abstract: A semiconductor wafer of single-crystal silicon includes: a polished front side and a back side; a denuded zone, which extends from the polished front side toward the back side to a depth of not less than 45 ?m; and a region adjacent to the denuded zone, the region having bulk micro defect (BMD) seeds, which are capable of being developed into BMDs. A density of the BMDs at a distance of 120 ?m from the front side is not less than 3×109 cm?3.

Abstract: Semiconductor wafers useful for NAND circuitry and having a front side, a rear side, a middle and a periphery, have an Nv region which extends from the middle to the periphery; a denuded zone which extends from the front side to a depth of not less than 20 ?m into the interior of the semiconductor wafer, where the density of vacancies in the denuded zone, determined by means of platinum diffusion and DLTS is not more than 1×1013 vacancies/cm3; a concentration of oxygen of not less than 4.5×1017 atoms/cm3 and not more than 5.5×1017 atoms/cm3; a region in the interior of the semiconductor wafer which adjoins the denuded zone and has nuclei which can be developed by means of a heat treatment into BMDs having a peak density of not less than 6.0×109/cm3, where the heat treatment comprises heating the semiconductor wafer to a temperature of 800° C. over a period of four hours and to a temperature of 1000° C. over a period of 16 hours. The wafers are produced by a unique RTA treatment of Nv wafers.

Abstract: Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p+-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3×1017 atoms/cm3 and not more than 6.0×1017 atoms/cm3; a resistivity of the substrate wafer of not less than 5 m?cm and not more than 10 m?cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Abstract: A semiconductor wafer made of single-crystal silicon has an oxygen concentration (new ASTM) of not less than 4.9×1017 atoms/cm3 and not more than 6.5×107 atoms/cm3 and a nitrogen concentration (new ASTM) of not less than 8×1012 atoms/cm3 and not more than 5×1013 atoms/cm3, wherein a frontside of the semiconductor wafer is covered with an epitaxial layer made of silicon, wherein the semiconductor wafer comprises BMDs of octahedral shape whose mean size is 13 to 35 nm, and whose mean density is not less than 3×108 cm?3 and not more than 4×109 cm?3, as determined by IR tomography.