Abstract: A plasma etching equipment (5) is proposed for especially anisotropic etching a substrate (13) by the action of a plasma (21). For this purpose, a first, especially inductively coupled plasma-generating device (31) is provided, which has a first means (11) for generating a first high-frequency electromagnetic alternating field, an etching chamber (10) for generating a first plasma (21) from reactive particles by the action of the first high-frequency electromagnetic alternating field upon a first reactive gas with the substrate (13) to be etched, and a first gas supply (22).