Abstract: A device for collecting split wood, having a plurality of bar elements, which each have a first and a second longitudinal portion, and a plurality of connecting elements, which connect the bar elements movably to one another. The second longitudinal portion of each bar element extends in a curved manner and the first longitudinal portion extends in a straight manner. The connecting elements cooperate with the second longitudinal portions, and a clamping element, which cooperates with the first longitudinal portions, is designed to firmly clamp the bar elements to a chopping block by their first longitudinal portions.

Abstract: A device for collecting split wood, having a plurality of bar elements, which each have a first and a second longitudinal portion, and a plurality of connecting elements, which connect the bar elements movably to one another. The second longitudinal portion of each bar element extends in a curved manner and the first longitudinal portion extends in a straight manner. The connecting elements cooperate with the second longitudinal portions, and a clamping element, which cooperates with the first longitudinal portions, is designed to firmly clamp the bar elements to a chopping block by their first longitudinal portions.

Abstract: A measuring method and device for characterizing a semiconductor component (1) having a pn junction and a measuring surface, which has a contacting subarea, covered by a metallization. The method including: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component (1) for separating charge carrier pairs in the semiconductor component (1), and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component (1) using a detection unit. In one step A, a predetermined excitation subarea of the measuring surface has a predetermined intensity of the excitation radiation and at least one sink subarea of the measuring surface has an intensity of the excitation radiation which is less than the intensity applied to the excitation subarea. The excitation and sink subareas are disposed on opposite sides of said contacting subarea and adjoin it and/or entirely or partially overlap it.

Abstract: A measuring method for characterizing a semiconductor component (1) having at least one pn junction and a measuring surface, which is the front and/or rear of the semiconductor component and which has at least one contacting subarea, which is covered by a metallization or is intended for coverage by a metallization, The method includes the following steps: A. Planar application of electromagnetic excitation radiation onto the measuring area of the semiconductor component (1) for separating charge carrier pairs in the semiconductor component (1), and B. spatially resolved measurement of electromagnetic radiation originating from the semiconductor component (1) using at least one detection unit.