Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species.

Abstract: A hexaaluminate-containing catalyst containing a hexaaluminate-containing phase which includes cobalt and at least one further element of La, Ba or Sr. The catalyst contains 2 to 15 mol % Co, 70 to 90 mol % Al, and 2 to 25 mol % of the further element of La, Ba or Sr. In addition to the hexaaluminate-containing phase, the catalyst can include 0 to 50% by weight of an oxidic secondary phase. The process of preparing the catalyst includes contacting an aluminum oxide source with cobalt species and at least with an element from the group of La, Ba and Sr. The molded and dried material is preferably calcined at a temperature greater than or equal to 800° C. In the reforming process for reacting hydrocarbons in the presence of CO2, the catalyst is used at a process temperature of greater than 700° C., with the process pressure being greater than 5 bar.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: The invention is based on a hammer drill and/or chisel hammer, having an impact mechanism unit, an impact mechanism housing and at least one damping unit. The invention proposes that the damping unit is arranged on the impact mechanism housing along a main extension direction of the impact mechanism unit.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: The present invention relates to a method for treating and/or preventing a disease associated with glucose toxicity in a subject which may comprise administering to the subject a compound that reduces the level of Bim, PUMA and/or Bax activity in a cell of the subject. Furthermore, provided is a method for culturing cells susceptible to exposure to high concentrations of glucose, which may comprise delivering to the cells, or progenitor cells thereof, a compound that reduces the level of Bim, PUMA and/or Bax activity in the cells.

Abstract: An integrated circuit includes a substrate. A surface region of the substrate includes a contact pad region. A passivation layer stack includes at least one passivation layer. The passivation layer stack is formed over the surface region and adjacent to the contact pad region. An upper portion of the passivation layer stack is removed in, in a portion of the passivation layer stack proximate the contact pad region.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: A hexaaluminate-containing catalyst for reforming hydrocarbons. The catalyst consists of a hexaaluminate-containing phase, which consists of cobalt and at least one further element from the group consisting of La, Ba, and Sr, and an oxidic secondary phase. To prepare the catalyst, an aluminum source is brought into contact with a cobalt-containing metal salt solution, dried, and calcined. The metal salt solution additionally contains the at least one further element. The reforming of methane and carbon dioxide is great economic interest since synthesis gas produced during this process can form a raw material for the preparation of basic chemicals. In addition, the use of carbon dioxide as a starting material is important in the chemical syntheses in order to bind carbon dioxide obtained as waste product in numerous processes by a chemical route and thereby avoid emission into the atmosphere.

Abstract: A catalyst comprising (i) a support, (ii) metal particles and (iii) a shell which is arranged between the metal particles, wherein the shell (iii) comprises silicon oxide.

Abstract: The present invention relates to a process for producing a catalyst for carrying out methanation reactions. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds brought into contact with one another are intimately mixed, thermally treated so that the metal salt fraction melts and subsequently subjected to a low-temperature calcination step and a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises/contains nickel nitrate hexahydrate. The hydrotalcite-comprising starting material is preferably hydrotalcite or a hydrotalcite-like compound as starting material, and the hydrotalcite-comprising starting material preferably comprises magnesium and aluminum as metal species.

Abstract: The present invention relates to a process for producing a catalyst for the reforming of hydrocarbons, preferably methane, in the presence of CO2, water and/or hydrogen. The production of the catalyst is based on contacting of a hydrotalcite-comprising starting material with a fusible metal salt. The compounds which have been brought into contact with one another are intimately mixed and treated thermally, resulting in the fusible metal salt forming a melt. After molding, the material is subjected to a high-temperature calcination step. The metal salt melt comprises at least one metal selected from the group consisting of K, La, Fe, Co, Ni, Cu and Ce, preferably Ni. The metal salt melt more preferably comprises nickel nitrate hexahydrate.

Abstract: Embodiments relate to magnetoresistive (MR) sensors, sensor elements and structures, and methods. In particular, embodiments relate to MR, such as giant MR (GMR) or tunneling MR (TMR), spin valve layer systems and related sensors having improved stability. Embodiments include at least one of a multi-layer pinned layer or a multi-layer reference layer, making the stack more stable and therefore suitable for use at higher temperatures and magnetic fields than conventional systems and sensors.

Abstract: A vibration dosimeter (2) for determining the vibrational loading of people includes a determination device (6) for determining the operating period duration, a calculation device (6) for calculating the permitted work time as a function of a tool-specific characteristic vibration value, a comparison device (6) for comparing the effective operating period duration with the permitted work time, and an interface (3) for reading in the characteristic vibration value from the tool (1).

Abstract: The invention relates to a method for producing a honed segment bore (5-8) in work pieces (1-4), which each have a segment bore (5-8). The work pieces (1-4) are arranged relative to each other such that the segment bores (5-8) of the work pieces (1-4) are aligned to a common longitudinal axis (9) and a closed circle (12) is formed in a projection along the common longitudinal axis (9). The segment bores (5-8) of the work pieces (1-4) arranged relative to each other are then honed together. An elaborate grinding process can thus be replaced by a honing process, in which a plurality of work pieces (1-4) can be processed simultaneously, thus reducing the cycle time.

Abstract: A semiconductor device, a method of manufacturing a semiconductor device and a method for transmitting a signal are disclosed. In accordance with an embodiment of the present invention, the semiconductor device comprises a first semiconductor chip comprising a first coil, a second semiconductor chip comprising a second coil inductively coupled to the first coil, and an isolating intermediate layer between the first semiconductor chip and the second semiconductor chip.

Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

Abstract: The present invention relates to a method for treating and/or preventing a disease associated with glucose toxicity in a subject which may comprise administering to the subject a compound that reduces the level of Bim, PUMA and/or Bax activity in a cell of the subject. Furthermore, provided is a method for culturing cells susceptible to exposure to high concentrations of glucose, which may comprise delivering to the cells, or progenitor cells thereof, a compound that reduces the level of Bim, PUMA and/or Bax activity in the cells.