Patents by Inventor Andreas Suss

Andreas Suss has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pixel architecture and an image sensor
    Patent number: 10972688
    Abstract: A pixel architecture comprises: an absorption layer, which is configured to generate charges in response to incident light; a semiconductor charge-transport layer, which is configured to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein the charge-transport layer comprises a bias region and a charge-dispatch region being associated with the bias region; an electric connection connecting to and providing a selectable bias voltage to the bias region; and at least one transfer gate, wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate, transfer of charges from the charge-dispatch region to a charge node.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: April 6, 2021
    Assignee: IMEC vzw
    Inventors: Maarten Rosmeulen, Andreas Suss
  • Pixel Architecture and an Image Sensor
    Publication number: 20200021758
    Abstract: A pixel architecture comprises: an absorption layer, which is configured to generate charges in response to incident light; a semiconductor charge-transport layer, which is configured to transport the generated charges through the charge-transport layer, wherein one or more doped regions are arranged in the charge-transport layer, wherein the charge-transport layer comprises a bias region and a charge-dispatch region being associated with the bias region; an electric connection connecting to and providing a selectable bias voltage to the bias region; and at least one transfer gate, wherein the doped regions and the bias region are differently biased for driving transport of the generated charges towards the charge-dispatch region, and for controlling, together with the at least one transfer gate, transfer of charges from the charge-dispatch region to a charge node.
    Type: Application
    Filed: July 15, 2019
    Publication date: January 16, 2020
    Inventors: Maarten Rosmeulen, Andreas Suss