Abstract: An integrated circuit for receiving data includes an input receiver circuit that is supplied with a data signal and a reference signal. The input receiver circuit converts the data signal into differential input control signals that are supplied to first and second signal paths. The first and second signal paths being connected in parallel. The first signal path includes a first comparator circuit that is connected, via a delay circuit and an amplifier circuit, to an output connection of the integrated circuit. The second signal path includes a second comparator circuit that is likewise connected, via a first inverter circuit and a second inverter circuit, to the output connection of the integrated circuit. The two amplifier circuits act as edge discriminators that drive each other and make it possible to generate, at the output connection, an output signal with the same duty cycle as the data signal without distortion.

Abstract: A method for classifying memory cells in an integrated circuit is provided, wherein the integrated circuit has a memory cell field including a plurality of memory cells. The method includes determining, for each subset of the memory cells of a plurality of subsets of the memory cells, a threshold voltage distribution; determining whether the determined threshold voltage distributions fulfill a threshold voltage criterion; and depending on whether the determined threshold voltage distributions fulfill the threshold voltage criterion, classifying at least some of the non-selected memory cells.

Abstract: An integrated circuit has a plurality of first memory cells, which are electrically coupled along a first line, and additionally has a plurality of second memory cells which are electrically coupled along a second line. The integrated circuit furthermore has a switching unit having a plurality of switching elements having in turn a first contact and a second contact. The first contact of a first switching element is coupled to the plurality of first memory cells, and the first contact of a second switching element is coupled to the plurality of second memory cells. In addition, the first contact of a third switching element is coupled to the second contact of the first switching element, and the first contact of a fourth switching element is coupled to the second contact of the second switching element.

Abstract: In one embodiment of the invention, a method of operating a memory system is provided, including concurrently reading data from a plurality of memories of the memory system and outputting the data from the memory system at an output channel capacity of an I/O port of the memory system by converting a data bus width of data read from at least some of the plurality of memories to a data bus width of the I/O port.

Abstract: A method of storing data in a memory is provided, including testing a plurality of memory cells of a plurality of memory cell sectors. Each memory cell sector includes a plurality of memory cells. Each memory cell sector is classified into at least one quality class of a plurality of quality classes depending on the results of the testing of the memory cells of the respective memory cell sector. Data is stored in the memory cells of the classified memory cell sectors depending on the quality class of the respective memory cell sector.

Abstract: An integrated circuit has a plurality of first memory cells, which are electrically coupled along a first line, and additionally has a plurality of second memory cells which are electrically coupled along a second line. The integrated circuit furthermore has a switching unit having a plurality of switching elements having in turn a first contact and a second contact. The first contact of a first switching element is coupled to the plurality of first memory cells, and the first contact of a second switching element is coupled to the plurality of second memory cells. In addition, the first contact of a third switching element is coupled to the second contact of the first switching element, and the first contact of a fourth switching element is coupled to the second contact of the second switching element.

Abstract: Embodiments of the invention relate to a method for accessing a memory cell in an integrated circuit, a method of determining a set of word line voltage identifiers in an integrated circuit, a method for classifying memory cells in an integrated circuit, a method for determining a word line voltage for accessing a memory cell in an integrated circuit and integrated circuits. In an embodiment, a method of accessing a memory cell in an integrated circuit, wherein the integrated circuit has a memory cell field including a plurality of memory cells. The method includes selecting a word line voltage identifier from a pre-stored set of word line voltage identifiers, each one of the pre-stored set of word line voltage identifiers being assigned to at least one of the memory cells in the memory cell field and accessing the memory cell using a word line voltage being dependent on the selected word line voltage identifier.

Abstract: The present invention relates generally to integrated circuits, a cell, a cell arrangement, a method for manufacturing an integrated circuit, a method for manufacturing a cell arrangement and a memory module. In an embodiment of the invention, an integrated circuit having a cell is provided. The cell includes a first source/drain region, a second source/drain region, an active region between the first source/drain region and the second source/drain region, a gate insulating region disposed above the active region, a gate region disposed above the gate insulating region, and at least one metal structure below the first source/drain region or the second source/drain region.

Abstract: A receiver circuit for receiving and forwarding data signals comprises at least one first and one second input to be used to inject an external digital data signal and a reference signal into the receiver circuit, a multistage input amplifier circuit which comprises a first amplifier stage and a second amplifier stage connected downstream of the first amplifier stage, and a device for actively setting a first operating point of the multistage input amplifier circuit. The multistage input circuit provides the external digital data signal in amplified form at an output and the device generates a bias potential for driving the input multistage amplifier circuit on the basis of the circuit topography of the multistage input amplifier circuit. The bias potential is used to set a second operating point of the first amplifier stage in such a manner that its output signal is within a prescribed third operating point of the second amplifier stage.

Abstract: In one embodiment of the invention, a method of operating a memory system is provided, including concurrently reading data from a plurality of memories of the memory system and outputting the data from the memory system at an output channel capacity of an I/O port of the memory system by converting a data bus width of data read from at least some of the plurality of memories to a data bus width of the I/O port.

Abstract: A memory system includes a plurality of resistive memory cell fields including at least a first resistive memory cell field and a second resistive memory cell field, the first resistive memory cell field formed with a plurality of resistive memory cells storing data at a first data storage speed, the second resistive memory cell field formed with a plurality of resistive memory cells storing data at a second data storage speed lower than the first data storage speed, and a controller controlling data transfer between the plurality of resistive memory cell fields.

Abstract: A method of storing data in a memory is provided, including testing a plurality of memory cells of a plurality of memory cell sectors. Each memory cell sector includes a plurality of memory cells. Each memory cell sector is classified into at least one quality class of a plurality of quality classes depending on the results of the testing of the memory cells of the respective memory cell sector. Data is stored in the memory cells of the classified memory cell sectors depending on the quality class of the respective memory cell sector.

Abstract: A method for reading, from a semiconductor memory, data having a data burst length greater than two includes, beginning at a first time, receiving, on an address bus, a first address part associated with memory cells to be addressed. At a second time that is later than the first time, a read command is placed on a command bus to initiate read access to the first memory cells and a second address part associated with memory cells to be addressed is received on the address bus. Beginning at a third time that is later than the second time, data associated with the first and second address parts is transferred to a data bus.

Abstract: The present invention relates to a DLL circuit for providing an output signal which is shifted with by a desired phase shift with respect to a periodic input signal. In one embodiment, the DLL Circuit comprises a plurality of delay elements all having the same delay time and being connected in series to form a delay chain, wherein the periodic input signal is applied to the first delay element of the delay chain. The DLL circuit further comprises a detection unit which is connected to the outputs of at least a portion of the delay elements and which is provided to determine which delay element a particular edge of the periodic signal has reached after a predetermined phase progress of the periodic signal, and to generate a corresponding control information which indicates at which delay element the particular edge of the periodic signal has last been determined.

Abstract: The invention relates to a semiconductor memory apparatus in which the connections of the connecting contacts can be varied. The invention also relates to a semiconductor apparatus which comprises at least two semiconductor memory apparatuses according to the invention.

Abstract: A calibration configuration for setting an adjustable impedance has a voltage divider with a variable resistor and a resistor connected in series, which circuit is supplied with potentials of a supply voltage and has, between the resistors, a partial voltage tap off terminal. A circuit has a further resistor, whose value is in a fixed relationship with a resistance of the first voltage divider resistor, and generates a voltage dependent upon a value derived from the further resistor. The voltage and the partial voltage are fed to a comparator for outputting a comparison result to a downstream control logic unit, which logic unit is coupled to the resistor of the first voltage divider and generates a control signal dependent upon the comparator output signal. The control logic unit control signal is used to set the variable resistor until the voltages fed to the comparator correspond to one another.

Abstract: A memory is provided which has a memory region for storing data, an input for receiving a data bundle with a plurality of temporally sequential data blocks and an input for receiving a data mask signal which is assigned to the data bundle. The memory also has a unit for receiving a data block from the plurality of temporally sequential data bundle data blocks which is to be written into the memory region in dependence on the data mask signal. The memory also includes a unit for writing the received data block into the memory region.

Abstract: In order to operate an integrated dynamic memory having a memory cell array having bit lines and word lines a plurality of individual actions—to be performed for a memory access—from the activation of one of the word lines up to the precharging of the word lines are controlled in a synchronized manner with a clock signal. A value for defining a defined number of clock cycles between at least two individual actions is programmed at the beginning. For this purpose, a control circuit has a programmable unit. In this way, in conjunction with a clocked circuit, a comparatively high data throughput is made possible even at variable clock frequencies.

Abstract: A device for generating memory-internal command signals from a memory operation command includes a command input for receiving a memory operation command for performing a memory operation in a memory system, a clock signal input for receiving an external clock signal, and an output for applying the memory-internal command signal to a command signal line of the memory system. In the device, the memory-internal command signal is generated at a time which depends on the memory-internal command signal and which is selectively settable and synchronous with a rising or synchronous with a falling edge of the external clock signal.

Abstract: The electrical circuit includes a plurality of circuit components which are connected via a bus. At least one of the circuit components can be tested independently of the other circuit components. The circuit component which is to be tested and the method for testing the circuit component are distinguished in that steps are taken to ensure that, during testing, the circuit component which is tested, outputs no data to the bus, and/or instead of the data which would need to be output to the bus during normal operation, outputs other data to the bus.