Patents by Inventor Andreas Thamm

Andreas Thamm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8627720
    Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.
    Type: Grant
    Filed: September 12, 2012
    Date of Patent: January 14, 2014
    Assignee: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Bernhard Winkler, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm, Boris Binder
  • Publication number: 20130001712
    Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element.
    Type: Application
    Filed: September 12, 2012
    Publication date: January 3, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Thoralf Kautzsch, Bernhard Winkler, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm, Boris Binder
  • Patent number: 8266962
    Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.
    Type: Grant
    Filed: January 28, 2009
    Date of Patent: September 18, 2012
    Assignee: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Bernhard Winkler, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm, Boris Binder
  • Patent number: 7832279
    Abstract: A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
    Type: Grant
    Filed: September 11, 2008
    Date of Patent: November 16, 2010
    Assignee: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Boris Binder, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm
  • Publication number: 20100186511
    Abstract: A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate.
    Type: Application
    Filed: January 28, 2009
    Publication date: July 29, 2010
    Applicant: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Bernhard Winkler, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm, Boris Binder
  • Publication number: 20100058876
    Abstract: A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella.
    Type: Application
    Filed: September 11, 2008
    Publication date: March 11, 2010
    Applicant: Infineon Technologies AG
    Inventors: Thoralf Kautzsch, Boris Binder, Dirk Meinhold, Ben Rosam, Bernd Foeste, Andreas Thamm