Abstract: An article of manufacture for a universal push bar to create a hygienically safe shopping cart according to the present invention is disclosed. The universal push bar is made of a main push bar having a first end and a second end, a pair of support members having an upper end coupled to the main push, a first support member coupled about the first end of the main push bar and a second support member coupled about the second end of the main push bar, and a pair of claiming mechanisms coupled to each lower end of the pair of support members, the pair of claiming mechanisms having a pair of opposing claiming surfaces configured to attach the clamping mechanisms to a shopping cart handle.

Abstract: Method for the treatment of a semiconductor substrate (2), in which an ion beam (4) is produced from a doping gas and is directed onto the semiconductor substrate (2), characterized in that the doping gas is fed through a plastic hose (6) to a unit (3) for producing an ion beam (4), and is then ionized. The method and the device advantageously permit the supply of the unit 3 for producing an ion beam 4 with a doping gas from customary gas reservoirs 14 such as customary compressed gas cylinders, for example. Voltage flashovers from the deflection elements 5 are effectively prevented by the use of a plastic hose 6. The method and the device thus permit the simple construction of a corresponding ion implantation apparatus in conjunction with possible inexpensive supply thereof with doping gas.

Abstract: Method for the treatment of a semiconductor substrate (2), in which an ion beam (4) is produced from a doping gas and is directed onto the semiconductor substrate (2), characterized in that the doping gas is fed through a plastic hose (6) to a unit (3) for producing an ion beam (4), and is then ionized. The method and the device advantageously permit the supply of the unit 3 for producing an ion beam 4 with a doping gas from customary gas reservoirs 14 such as customary compressed gas cylinders, for example. Voltage flashovers from the deflection elements 5 are effectively prevented by the use of a plastic hose 6. The method and the device thus permit the simple construction of a corresponding ion implantation apparatus in conjunction with possible inexpensive supply thereof with doping gas.

Abstract: An arrangement for processing a substrate has an ion source for production of ions for processing the substrate using at least one process gas, and a process gas supply device, which is coupled to the ion source, in order to supply the process gas into the ion source. The process gas supply device has a tube composed of electrically insulating material, as well as a process gas supply regulator, which is designed such that the process gas is supplied at a pressure which is lower than the ambient pressure in the tube.