Patents by Inventor Andreas Tschmelitsch

Andreas Tschmelitsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for detecting damage to a semiconductor chip
    Patent number: 9378317
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: June 28, 2016
    Assignee: Infineon Technologies AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guentr Herzele
  • Semiconductor Device with Damage Detection Circuit and Method for Producing the Same
    Publication number: 20140040853
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Application
    Filed: October 2, 2013
    Publication date: February 6, 2014
    Applicant: Infineon Technologies AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guentr Herzele
  • Detection circuit and method for detecting damage to a semiconductor chip
    Patent number: 8575723
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: November 5, 2013
    Assignee: Infineon Technologies AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guenter Herzele
  • Current control using thermally matched resistors
    Patent number: 8129789
    Abstract: A semiconductor chip includes a semiconductor body having an upper surface. At least one power semiconductor component is integrated in the semiconductor chip together with other circuitry. Two or more vertically spaced metallization layers are arranged on the surface of the semiconductor body. The top metallization layer includes terminals establishing an electrical connection to load terminals of the power semiconductor component. A current measurement resistor is formed by a portion of the top metallization layer for sensing a load current of the power semiconductor component. A temperature measurement resistor is formed by a portion of at least one of the vertically spaced metallization layers, electrically isolated from current measurement resistor but thermally coupled thereto such that the current measurement resistor and the temperature measurement resistor have the same temperature.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: March 6, 2012
    Assignee: Infineon Technologies AG
    Inventors: Alexander Mayer, Guenter Herzele, Andreas Tschmelitsch, Matthias Kogler
  • Current Control Using Thermally Matched Resistors
    Publication number: 20110291741
    Abstract: A semiconductor chip includes a semiconductor body having an upper surface. At least one power semiconductor component is integrated in the semiconductor chip together with other circuitry. Two or more vertically spaced metallization layers are arranged on the surface of the semiconductor body. The top metallization layer includes terminals establishing an electrical connection to load terminals of the power semiconductor component. A current measurement resistor is formed by a portion of the top metallization layer for sensing a load current of the power semiconductor component. A temperature measurement resistor is formed by a portion of at least one of the vertically spaced metallization layers, electrically isolated from current measurement resistor but thermally coupled thereto such that the current measurement resistor and the temperature measurement resistor have the same temperature.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 1, 2011
    Inventors: Alexander Mayer, Guenter Herzele, Andreas Tschmelitsch, Matthias Kogler
  • Semiconductor Device With Damage Detection Circuit and Method for Producing the Same
    Publication number: 20080035923
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Application
    Filed: August 10, 2007
    Publication date: February 14, 2008
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guenter Herzele