Abstract: An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.

Abstract: A transistor device includes: a semiconductor substrate having a doping concentration of a first dopant type; a highly doped source region of a second dopant type formed in a first surface of the semiconductor substrate; a first highly doped drain region of the second dopant type formed in the first surface; a gate structure arranged on the first surface and including a gate electrode formed on the first surface; and a first lightly doped region formed in the first surface and extending from the highly doped source region under the gate electrode. A channel region extends between the first lightly doped region and the highly doped drain region. The channel region has an average doping level of the first dopant type of n×10x that varies by less than 0.5×n×10X between the first lightly doped region and the highly doped drain region along the lateral direction parallel to the first surface.

Abstract: An electronic device is disclosed. The electronic device includes: a first doped region of a first doping type arranged in a first semiconductor layer of a second doping type complementary to the first doping type; an insulation layer formed on top of the first semiconductor layer and adjoining the first doped region; at least two active device regions arranged in a second semiconductor layer formed on top of the insulation layer; and an electrical connection between one of the at least two active device regions and the first doped region. Each of the at least two active device regions is arranged adjacent to the first doped region and separated from the first doped region by the insulation layer.