Abstract: There are provided measures for enabling/realizing latency-bounded packet delivery in a mobile communication system, particularly in a mobile communication system (or mobile networking) being integrated in a time-sensitive communication system (or time-sensitive networking).

Abstract: There are provided measures for enabling/realizing latency-bounded packet delivery in a mobile communication system, particularly in a mobile communication system (or mobile networking) being integrated in a time-sensitive communication system (or time-sensitive networking).

Abstract: Systems, methods, apparatuses, and computer program products for improving redundant data treatment in communication systems are provided. One method may include detecting, by a network entity, that two or more flows of packets are related. The method may then include informing lower layer(s) that the packets are related along with their QoS constraints, and directing the lower layer(s) to ensure that latency, availability and/or reliability requirements of the packets are fulfilled.

Abstract: Systems, methods, apparatuses, and computer program products for survival time monitoring and status transfer for time sensitive communication are provided.

Abstract: A transceiver includes a transmit signal path, a receive signal path, an amplifier, and control circuitry. The control circuitry is configured to couple the amplifier in the transmit signal path to amplify a transmit signal during a transmit operating mode of the transceiver. Furthermore, the control circuitry is configured to couple the amplifier in the receive signal path to amplify a receive signal during a receive operating mode of the transceiver.

Abstract: A transceiver includes a transmit signal path, a receive signal path, an amplifier, and control circuitry. The control circuitry is configured to couple the amplifier in the transmit signal path to amplify a transmit signal during a transmit operating mode of the transceiver. Furthermore, the control circuitry is configured to couple the amplifier in the receive signal path to amplify a receive signal during a receive operating mode of the transceiver.

Abstract: Embodiments relate to apparatuses (10; 20), methods and computer programs for determining transmission control information. The Apparatus (10) is suitable for a base band unit (110) of a base station transceiver (100) of a mobile communication system (300), the base station transceiver (100) further comprising one or more radio units (120) configured to wirelessly communicate with the base band unit (110) using one or more wireless fronthaul links. The apparatus (10) comprises at least one output (12) configured to transmit a downlink component of the one or more wireless fronthaul links to the one or more radio units (120). The apparatus (10) further comprises at least one input (14) configured to receive an uplink component of the one or more wireless fronthaul links from the one or more radio units (120). The apparatus (10) further comprises a control module (16) configured to control the at least one output (12) and the at least one input (14).

Abstract: The embodiments of the invention relate to a transmitter method for multiple antenna systems. The transmitter method contains the step of operating at least one antenna array in a first operation mode by transmitting first transmit signals (TS1-1, TS1-a, TS1-A) from a first number of antenna elements (AEG1) with a first transmit power and the step of operating the at least one antenna array in at least one second operation mode by transmitting at least second transmit signals (TS2-1, TS2-b, TS2-B, TS3-1, TS3-C, TS3-C) from at least one second number of antenna elements (AEG2, AEG3) smaller than the first number of antenna elements with at least one second transmit power larger than the first transmit power. The embodiments of the invention further relate to a transmitter apparatus for multiple antenna systems.

Abstract: Embodiments relate to apparatuses (10; 20), methods and computer programs for determining transmission control information. The Apparatus (10) is suitable for a base band unit (110) of a base station transceiver (100) of a mobile communication system (300), the base station transceiver (100) further comprising one or more radio units (120) configured to wirelessly communicate with the base band unit (110) using one or more wireless fronthaul links. The apparatus (10) comprises at least one output (12) configured to transmit a downlink component of the one or more wireless fronthaul links to the one or more radio units (120). The apparatus (10) further comprises at least one input (14) configured to receive an uplink component of the one or more wireless fronthaul links from the one or more radio units (120). The apparatus (10) further comprises a control module (16) configured to control the at least one output (12) and the at least one input (14).

Abstract: The embodiments of the invention relate to a transmitter method for multiple antenna systems. The transmitter method contains the step of operating at least one antenna array in a first operation mode by transmitting first transmit signals (TS1-1, TS1-a, TS1-A) from a first number of antenna elements (AEG1) with a first transmit power and the step of operating the at least one antenna array in at least one second operation mode by transmitting at least second transmit signals (TS2-1, TS2-b, TS2-B, TS3-1, TS3-C, TS3-C) from at least one second number of antenna elements (AEG2, AEG3) smaller than the first number of antenna demeats with at least one second transmit power larger than the first transmit power. The embodiments of the invention further relate to a transmitter apparatus for multiple antenna systems.

Abstract: The invention relates to a trench isolation with a self-aligning surface sealing and a fabrication method for said surface sealing. In this case, the surface sealing may have an overlap region of the substrate surface or a receded region into which extends an electrically conductive layer formed on the substrate surface.

Abstract: A memory cell includes a selection transistor and a trench capacitor. The trench capacitor is filled with a conductive trench filling on which an insulating covering layer is arranged. The insulating covering layer is laterally overgrown, proceeding from the substrate with a selectively grown epitaxial layer. The selection transistor is formed in the selectively grown epitaxial layer, comprises a source region connected to the trench capacitor and a drain region connected to a bit line. The junction depth of the source region is chosen so that the source region reaches as far as the insulating covering layer. Optionally, the thickness of the epitaxial layer can be reduced to a thickness by oxidation and a subsequent etching. Afterwards, a contact trench is etched through the source region down to the conductive trench filling, which trench is filled with a conductive contact and electrically connects the conductive trench filling to the source region.

Abstract: Process for producing a plurality of gate stacks approximately the same height and equidistant on a semiconductor substrate. The process includes providing a gate dielectric on the semiconductor substrate and applying and patterning at least a first layer and a second layer, above the first layer, to the gate dielectric to produce the gate stacks. An oblique implantation of an oxidation-inhibiting implantation species is carried out into two opposite, uncovered side faces of the second of the gate stacks, with respectively adjacent gate stacks serving to shadow the uncovered side faces of the first layer of the gate stacks. Oxidation to simultaneously form a first oxide layer on uncovered side faces of the first layer of the gate stacks and a second oxide layer on uncovered side faces of the second layer of the gate stacks is carried out, the thickness of the first oxide layer being greater than the thickness of the second oxide layer.

Abstract: A description is given of a method for a selective masking of a structure with a small structure surface with respect to a structure with a larger structure surface. To that end, the structures are filled with a covering layer. The covering layer is formed with a larger thickness above the first structure, which has the larger structure surface, than above the second structure. Afterward, the covering layer is removed by a homogeneous removal method, so that first the structure surface of the second structure is uncovered. A simple self-aligning method for fabricating a mask for uncovering the second structure is thus provided.

Abstract: A transistor is provided which advantageously utilizes a part of the area which, in conventional transistors, is provided for the isolation between the transistors. In this case, the channel width can be enlarged in a self-aligned manner without the risk of short circuits. The field-effect transistor according to the invention has the advantage that it is possible to ensure a significant increase in the effective channel width for the forward current ION compared with previously used, conventional transistor structures, without having to accept a reduction of the integration density that can be attained. Thus, by way of example, the forward current ION can be increased by up to 50%, without having to alter the arrangement of the active regions or of the trench isolation.

Abstract: A transistor is provided which advantageously utilizes a part of the area which, in conventional transistors, is provided for the isolation between the transistors. In this case, the channel width can be enlarged in a self-aligned manner without the risk of short circuits. The field-effect transistor according to the invention has the advantage that it is possible to ensure a significant increase in the effective channel width for the forward current ION compared with previously used, conventional transistor structures, without having to accept a reduction of the integration density that can be attained. Thus, by way of example, the forward current ION can be increased by up to 50%, without having to alter the arrangement of the active regions or of the trench isolation.

Abstract: The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect directly to the planar channel region (vertical extended channel regions). Said field effect transistor has the advantage that a significant increase in the effective channel width for the current flow ION can be guaranteed relative to conventional transistor structures used up until the present, without having to accept a reduction in the achievable integration density. Said field effect transistor furthermore has a low reverse current IOFF. The above advantages are achieved without the thickness of the gate insulators up to the region of the charge transfer tunnels having to be reduced or a reduced stability.

Abstract: The instant invention is a method for fabricating a trench contact to a deep trench capacitor with a polysilicon filling in a trench hole formed in a silicon substrate. An epitaxy process is performed to selectively grow silicon above the polysilicon filling in the trench hole. An opening leading to the polysilicon filling is anisotropically etched into the epitaxially grown silicon. The opening has lateral dimensions that are smaller than those of the polysilicon filling, and the opening is filled with polysilicon.

Abstract: A method for the fabrication of an integrated semiconductor component, in which at least one isolation trench is formed, a first layer of a nonconductive material is applied by a nonconformal deposition method, and a second layer of a nonconductive material is applied by a conformal deposition method at least to the back surface of the semiconductor component.

Abstract: The invention relates to a trench isolation with a self-aligning surface sealing and a fabrication method for said surface sealing. In this case, the surface sealing may have an overlap region of the substrate surface or a receded region into which extends an electrically conductive layer formed on the substrate surface.