Abstract: Various systems and methods for implementing unsupervised or reinforcement learning operations for a neuron weight used in a neural network are described. In an example, the learning operations include processing a spike train input at a neuron of a spiking neural network, applying a synaptic weight, and observing spike events occurring before and after the neuron processing based on respective spike traces. A synaptic weight update process operates to generate a new value of the synaptic weight based upon the spike traces, configuration values, and a reference weight value. A reference weight update process also operates to generate a new value of the reference value for significant changes to the synaptic weight. Reinforcement may be provided in some examples to implement changes to the reference weight in reduced time. In some examples, the techniques may be implemented in a neuromorphic hardware implementation of the spiking neural network.

Abstract: Systems and methods for supervised learning and cascaded training of a neural network are described. In an example, a supervised process is used for strengthening connections to classifier neurons, with a supervised learning process of receiving a first spike at a classifier neuron from a processing neuron in response to training data, and receiving an out-of-band communication of a second desired (artificial) spike at the classifier neuron that corresponds to the classification of the training data. As a result of spike timing dependent plasticity, connections to the classifier neuron are strengthened. In another example, a cascaded technique is disclosed to generate a plurality of trained neural networks that are separately initialized and trained based on different types or forms of training data, which may be used with cascaded or parallel operation of the plurality of trained neural networks.

Abstract: The present invention relates to polymers and to the use thereof in the form of active electrode material or in an electrode slurry as electrical charge storage means, the electrical charge storage means especially being secondary batteries. These secondary batteries are especially notable for high cell voltages, and simple and scalable processing and production methods (for example by means of screen printing).

Abstract: The present invention relates to polymers and to the use thereof in the form of active electrode material or in an electrode slurry as electrical charge storage means, the electrical charge storage means especially being secondary batteries. The secondary batteries are especially notable for high cell voltages, a small drop in capacity even on undergoing several charging and discharging cycles, and simple and scalable processing and production methods (for example by means of screen printing).

Abstract: Novel tetracyanoanthraquinodimethane polymers and use thereof. The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus. Tetracyanoanthraquinodimethane polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

Abstract: Novel tetracyanoanthraquinodimethane polymers and use thereof. The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus. Tetracyanoanthraquinodimethane polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

Abstract: The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus. 9,10-Bis(1,3-dithiol-2-ylidene)-9,10-dihydroanthracene polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

Abstract: Novel tetracyanoanthraquinodimethane polymers and use thereof. The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus. Tetracyanoanthraquinodimethane polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

Abstract: The present invention relates to polymers and to the use thereof in the form of active electrode material or in an electrode slurry as electrical charge storage means, the electrical charge storage means especially being secondary batteries. The secondary batteries are especially notable for high cell voltages, even when undergoing several charging and discharging cycles, and simple and scalable processing and production methods (for example by means of screen printing).

Abstract: The present invention relates to polymers and to the use thereof in the form of active electrode material or in an electrode slurry as electrical charge storage means, the electrical charge storage means especially being secondary batteries. The secondary batteries are especially notable for high cell voltages, and high capacities after undergoing several charging and discharging cycles, and simple and scalable processing and production methods (for example by means of screen printing).

Abstract: A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises semiconductor substrate, a first layer of a first semiconductor material over the semiconductor substrate and a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material.

Abstract: An intermediate product in the manufacture of a vertical multiple-channel FET device containing alternating —Si—[(SiGe)—Si]u- stacked layers is shown, as well as a process for selectively etching the SiGe layers in such a stacked layer system, and products obtained from such selective etching. Differential Ge content is added to the successive layers to provide uniform removal of the sacrificial SiGe layers.

Abstract: Providing a first layer of a semiconductor structure having at least one air gap between conductive lines formed in the first layer. The air gap extends into the first layer from a first surface of the first layer. A barrier dielectric material over the first surface and the air gap is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. An air gap can extend from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces.

Abstract: A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises semiconductor substrate, a first layer of a first semiconductor material over the semiconductor substrate and a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material.

Abstract: Providing a first layer of a semiconductor structure having at least one air gap between conductive lines formed in the first layer. The air gap extends into the first layer from a first surface of the first layer. A barrier dielectric material over the first surface and the air gap is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. An air gap can extend from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces.

Abstract: A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.

Abstract: A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap.

Abstract: In order to produce a variable valve lift device for the lift adjustment of the gas-exchange valves of an internal combustion engine, by means of which with adjustment forces and holding forces, independently from whether said holding forces and adjustment forces are applied mechanically, hydraulically or electrically, with an adjustment of the valve lift being as cost-effective as possible, and with maximum accuracy of the adjustment or control of the valve lift to be taken between the individual cylinders of a multi-cylinder internal combustion engine, and, moreover, the adjustment possibility of the valve lift of the valves of an internal combustion engine with several cylinders is obtained within smallest tolerances, it is suggested that a valve lift device (1) has a rotatable eccentric shaft (3), which consists of several eccentrics (4, 5) and whereby all possible contours of the eccentrics (4, 5) are positioned within a circle, which is formed by means of the external diameters of a bearing (6, 7) of th

Abstract: A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap.

Abstract: An intermediate product in the manufacture of a vertical multiple-channel FET device containing alternating —Si—[(SiGe)—Si]u- stacked layers is shown, as well as a process for selectively etching the SiGe layers in such a stacked layer system, and products obtained from such selective etching. Differential Ge content is added to the successive layers to provide uniform removal of the sacrificial SiGe layers.