Abstract: A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.

Abstract: A user equipment (UE) in a mobile communications system is operated in a manner that alleviates or avoids an overload condition in the UE. This involves operating a receiver of the UE to receive one or more data blocks via a channel. In response to a user equipment overload condition being detected, a channel quality indicator (CQI) value is reported to a serving base station, wherein the reported CQI value represents a channel quality that is lower than an actual quality of the channel. The UE is then operated in a manner that is consistent with the reported CQI value. UE overload conditions include overheating, and an inability to process received data blocks at the rate at which they are being received.

Abstract: A user equipment (UE) in a mobile communications system is operated in a manner that alleviates or avoids an overload condition in the UE. This involves operating a receiver of the UE to receive one or more data blocks via a channel. In response to a user equipment overload condition being detected, a channel quality indicator (CQI) value is reported to a serving base station, wherein the reported CQI value represents a channel quality that is lower than an actual quality of the channel. The UE is then operated in a manner that is consistent with the reported CQI value. UE overload conditions include overheating, and an inability to process received data blocks at the rate at which they are being received.

Abstract: A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap.

Abstract: In order to produce a variable valve lift device for the lift adjustment of the gas-exchange valves of an internal combustion engine, by means of which with adjustment forces and holding forces, independently from whether said holding forces and adjustment forces are applied mechanically, hydraulically or electrically, with an adjustment of the valve lift being as cost-effective as possible, and with maximum accuracy of the adjustment or control of the valve lift to be taken between the individual cylinders of a multi-cylinder internal combustion engine, and, moreover, the adjustment possibility of the valve lift of the valves of an internal combustion engine with several cylinders is obtained within smallest tolerances, it is suggested that a valve lift device (1) has a rotatable eccentric shaft (3), which consists of several eccentrics (4, 5) and whereby all possible contours of the eccentrics (4, 5) are positioned within a circle, which is formed by means of the external diameters of a bearing (6, 7) of th

Abstract: A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap.

Abstract: An intermediate product in the manufacture of a vertical multiple-channel FET device containing alternating —Si—[(SiGe)—Si]u- stacked layers is shown, as well as a process for selectively etching the SiGe layers in such a stacked layer system, and products obtained from such selective etching. Differential Ge content is added to the successive layers to provide uniform removal of the sacrificial SiGe layers.

Abstract: Systems and methods are described for exposing the third party call control functionality of a telecom signaling network as a web services interface. An intelligent network application part (INAP) plug-in is used to provide the translation logic of simple web service interface calls received from a client application, into the lower-level signaling protocol invocations needed to provide the third party call functionality at the network level. The INAP plug-in is deployed in a service access gateway positioned between the telecommunications signaling-based network and a multitude of service provider applications that seek to access various functions in the network. By implementing the INAP plug-in, applications are provided with access to third party call control (3PCC) within the network, without the necessity of invoking low-level signaling needed to establish calls, terminate or cancel calls, as well as obtain various call information.

Abstract: A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.

Abstract: An apparatus for single analyte molecule detection includes: a light source (20) for generating excitation light; a dichroic mirror (22) disposed on a first path of excitation light generated by the light source, wherein the mirror directs excitation light into a fiber aligner (30); an optical transducer coupled to the light source by the fiber aligner, the optical transducer comprising an optical waveguide (40) made of dielectric material having a first dielectrical index; a photon detector (70) disposed to receive fluorescent back radiation, wherein when a test solution having a second dielectric index lower than the first index is provided and comprises one or more target molecules, excitation light is transmitted by the waveguide and exits a waveguide tip disposed in the test solution so as to excite one or more target molecules; subsequently, the waveguide transmits back radiation along a second path to the photon detector that detects the transmitted back radiation.

Abstract: A hydraulic circuit for a toroidal transmission comprises: a) a single pump, b) a main pressure controller connected to the pump to generate a main line pressure in a main line, c) a roller controller connected to the main line to generate two roller control pressures from the main line pressure, d) at least one hydraulic roller actuator for adjusting a roller in a toroidal space set up by two disks, the roller actuator being connected to the roller controller, e) a disk controller connected to the main line, a disk control pressure being generated in the disk controller from the main line pressure, and f) at least one hydraulic disk actuator for axially adjusting at least one of the disks, the disk actuator being connected to the disk controller.

Abstract: A user equipment (UE) in a mobile communications system is operated in a manner that alleviates or avoids an overload condition in the UE. This involves operating a receiver of the UE to receive one or more data blocks via a channel. In response to a user equipment overload condition being detected, a channel quality indicator (CQI) value is reported to a serving base station, wherein the reported CQI value represents a channel quality that is lower than an actual quality of the channel. The UE is then operated in a manner that is consistent with the reported CQI value. UE overload conditions include overheating, and an inability to process received data blocks at the rate at which they are being received.

Abstract: An apparatus for single analyte molecule detection includes: a light source (20) for generating excitation light; a dichroic mirror (22) disposed on a first path of excitation light generated by the light source, wherein the mirror directs excitation light into a fiber aligner (30); an optical transducer coupled to the light source by the fiber aligner, the optical transducer comprising an optical waveguide (40) made of dielectric material having a first dielectrical index; a photon detector (70) disposed to receive fluorescent back radiation, wherein when a test solution having a second dielectric index lower than the first index is provided and comprises one or more target molecules, excitation light is transmitted by the waveguide and exits a waveguide tip disposed in the test solution so as to excite one or more target molecules; subsequently, the waveguide transmits back radiation along a second path to the photon detector that detects the transmitted back radiation.

Abstract: In order to produce a variable valve lift device for the lift adjustment of the gas-exchange valves of an internal combustion engine, by means of which with adjustment forces and holding forces, independently from whether said holding forces and adjustment forces are applied mechanically, hydraulically or electrically, with an adjustment of the valve lift being as cost-effective as possible, and with maximum accuracy of the adjustment or control of the valve lift to be taken between the individual cylinders of a multi-cylinder internal combustion engine, and, moreover, the adjustment possibility of the valve lift of the valves of an internal combustion engine with several cylinders is obtained within smallest tolerances, it is suggested that a valve lift device (1) has a rotatable eccentric shaft (3), which consists of several eccentrics (4, 5) and whereby all possible contours of the eccentrics (4, 5) are positioned within a circle, which is formed by means of the external diameters of a bearing (6, 7) of th

Abstract: A hydraulic circuit for a toroidal transmission comprises: a) a single pump, b) a main pressure controller connected to the pump to generate a main line pressure in a main line, c) a roller controller connected to the main line to generate two roller control pressures from the main line pressure, d) at least one hydraulic roller actuator for adjusting a roller in a toroidal space set up by two disks, the roller actuator being connected to the roller controller, e) a disk controller connected to the main line, a disk control pressure being generated in the disk controller from the main line pressure, and f) at least one hydraulic disk actuator for axially adjusting at least one of the disks, the disk actuator being connected to the disk controller.

Abstract: A method for controlling and monitoring the quality of service (QoS) in a wireless network wherein the network comprises at least a mobile station and wherein individual quality parameters of the service can be defined is—regarding a possibly comprehensive control of the quality of service—characterized in that in addition to the QoS of ongoing connections, the QoS for further services that concern non-ongoing connections and/or the establishment of connections are also controlled and monitored.

Abstract: An improved antenna assembly, wherein: the opposing end regions of the dipole halves are each electrically connected to a respective connection line; the connection lines lead to two amplifiers; the outputs of both amplifiers are connected to the two inputs of a transform, whose output is at least indirectly electrically connected to a connector, a coaxial connector; one or more filters are provided; the filters are positioned between the connection lines and the connector terminal; the filter or filters is/are designed to suppress mobile radio frequency ranges and/or to protect broadcasting signals.

Abstract: Method for transmission of broadcast- and/or multicast-data within a mobile communication system, preferably according to HSDPA technology (High Speed Downlink Packet Access), wherein the communication system has a multitude of mobile terminals (UE) is characterized in that—regarding a high level of efficiency of data transmission—selectable terminals (UE) within a radio cell of the communication system are combined as a group of terminals (UE) and that the group of terminals is assigned a common group identifier which serves as destination address for the data transmission.

Abstract: A method of forming a semiconductor device includes forming a local strain-inducing structure of a first semiconductor material at a point location within a dielectric layer. The local strain-inducing structure has a prescribed geometry with a surface disposed above a surface of the dielectric layer. A second semiconductor material is formed over the dielectric layer and the local strain inducing structure, wherein formation of a first portion of the second material over the dielectric layer provides a poly crystalline structure of the second material and wherein formation of a second portion of the second material over the local strain-inducing structure provides a single crystalline structure of the second material subject to mechanical strain by the surface of the local strain-inducing structure. The single crystalline structure serves as a strained semiconductor layer of the semiconductor device.

Abstract: A semiconductor device includes a mechanically strained channel, wherein the channel comprises of a single crystalline structure of a strained semiconductor layer having a non-linear geometry, the non-linear geometry including a portion of an arch shape. The semiconductor device further includes a dielectric layer, wherein a first portion of the channel is disposed overlying a point location within the dielectric layer and a second portion of the channel is disposed overlying a portion of the dielectric layer proximate to and outside of the point location. In addition, a gate is disposed proximate to the channel for controlling current flow through the channel between first and second current handling electrodes that are coupled to the channel.