Abstract: In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

Abstract: An optoelectronic component comprising a laser diode is disclosed.

Abstract: A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip.

Abstract: A method of producing an optoelectronic lighting device includes providing a laser chip carrier on which two edge emitting laser chips, arranging a carrier including two optical elements onto the laser chip carrier, forming a respective optical connection by an optical material between a respective laser facet and a respective optical element, singulating the two laser chips by dividing the laser chip carrier between the two laser chips to form two mutually divided laser chip carrier parts, wherein the dividing includes dividing the carrier between the two optical elements to form two mutually divided carrier parts each including one of the two optical elements, such that two singulated laser chips arranged on the respective divided laser chip carrier part are formed, the respective laser facets of which are optically connected to the respective optical element of the respective carrier part by the optical material.

Abstract: A device having a reinforcement layer and a method for producing a device are disclosed. In an embodiment a device includes a carrier plate, an electronic component, a shaped body and a reinforcement layer, wherein the electronic component is laterally enclosed by the shaped body, wherein, in a vertical direction, the electronic component is arranged between the carrier plate and the reinforcement layer, wherein the shaped body has a thermal expansion coefficient which is at least three times as large as a thermal expansion coefficient of the carrier plate and at least three times as large as a thermal expansion coefficient of the reinforcement layer, and wherein the carrier plate and the reinforcement layer adjoin the shaped body at least in places and are configured to reduce deformation of the shaped body in an event of temperature fluctuations.

Abstract: A driver circuit for at least one light-emitting optoelectronic component includes a control circuit having a capacitor and a control switch, wherein the control switch electrically connects to the component such that the component is supplied with current by the capacitor as a function of a switching state of the control switch, and a charging circuit having at least a first charging switch, a bias resistor and a buffer capacitor, wherein the charging circuit electrically connects to the capacitor and is configured to charge the capacitor through the bias resistor, and the buffer capacitor is linked to a connecting line between the bias resistor and the capacitor.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip that emits electromagnetic radiation, arranged in a housing, wherein the housing has an outer wall face and an exit face transparent to the electromagnetic radiation, the exit face is set back relative to the outer wall face in a direction of an interior of the housing, the optoelectronic semiconductor chip is arranged such that radiation emitted by the optoelectronic semiconductor chip in an emission direction can emerge from the optoelectronic component through the exit face, and the outer wall face has separating marks and the exit face is free of separating marks.

Abstract: A laser component including a molded body, and a laser chip embedded into the molded body and configured to emit a laser beam in an emission direction, wherein a surface of the molded body includes a deflection section arranged and inclined relative to the emission direction such that a laser beam emitted by the laser chip impinges on the deflection section and is subjected to total internal reflection at the deflection section.

Abstract: A semiconductor laser component including a semiconductor chip arranged to emit laser radiation, a cladding that is electrically insulating and covers the semiconductor chip in places, and a bonding layer that electrically conductively connects the semiconductor chip to a first connection point, wherein the semiconductor chip includes a cover surface, a bottom surface, a first front surface, a second front surface, a first side surface and a second side surface, the first front surface is arranged to decouple the laser beam, the cladding covers the semiconductor chip at least in places on the cover surface, the second front surface, the first side surface and the second side surface, and the bonding layer on the cladding extends from the cover surface to the first connection point.

Abstract: A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.

Abstract: A semiconductor laser includes a contact carrier having electrical contact surfaces to electrically contact a semiconductor layer sequence, an electrical connecting line from a main side of the semiconductor layer sequence facing away from the contact carrier and a plurality of capacitors, wherein the connecting line is located on or in the semiconductor layer sequence, at least two of the capacitors are present, the capacitances of which differ by at least a factor of 50, the capacitor having a smaller capacitance is configured to supply the active zone with current immediately after a switch-on operation, and the capacitor having the larger capacitance is configured to a subsequent current supply, the capacitor having the smaller capacitance directly electrically connects to the active zone, and a resistor is arranged between the capacitor having the larger capacitance and the active zone, the resistor having a resistance of at least 100 ?.

Abstract: The invention relates to an assembly comprising an electric component. The component has an electric part, a control circuit, and a capacitor. At least two lead frames are provided which are embedded into a housing. The part, the control circuit, and the capacitor are arranged on the lead frames, and the control circuit is designed to charge the capacitor and to supply the part with current from the capacitor in a clocked manner. The component has two contacts, and the component is arranged on a support. The support has an electrically conductive layer and the two contacts are connected to the layer in an electrically conductive manner. At least one first part of one lead frame is arranged at a greater distance from the electrically conductive layer than the second lead frame.

Abstract: In an embodiment a light-emitting component includes a housing and an edge emitting semiconductor laser arranged in the housing, wherein the semiconductor laser is configured to emit light at a side face in an angle range, wherein the housing includes an emission opening for emitting the light, wherein the semiconductor laser is arranged in a first layer having a first material, wherein a second layer is arranged on the first layer, the second layer having a second material, wherein the first layer and the second layer are transmissive to the light, wherein the second layer is arranged between the first layer and the emission opening, wherein the emission opening lies at least partly outside the angle range of the semiconductor laser, and wherein a part of the light is directed directly onto an interface between the first and second layers.

Abstract: An optoelectronic component comprising a laser diode is disclosed.

Abstract: A semiconductor radiation source includes at least one semiconductor chip that generates radiation; a controller with one or more switching elements configured for pulsed operation of the semiconductor chip; and at least one capacitor body, wherein the semiconductor chip directly electrically connects in a planar manner to the capacitor body, the controller electrically connects to a side of the semiconductor chip opposite the capacitor body, and the controller, the capacitor body and the semiconductor chip are stacked on top of each other so that the capacitor body is located between the control unit and the semiconductor chip.

Abstract: A laser component includes a housing that includes a base section including a top side and an underside, wherein a plurality of electrical soldering contact pads are configured at the underside of the base section, the electrical soldering contact pads enabling surface mounting of the laser component, a plurality of electrical chip contact pads are configured at the top side of the base section and electrically conductively connect to the soldering contact pads, the housing includes a cavity adjoining the top side of the base section, and a laser chip is arranged in the cavity and electrically conductively connects to at least some of the chip contact pads.

Abstract: An electrical circuit that drives a light-emitting component including a parallel circuit including a capacitor; and a switching element, wherein a first terminal for a voltage supply connects to a first contact of the capacitor and a second terminal for a voltage supply connects to a second contact of the capacitor, the switching element includes a first electrical switch including a first input for a first switching signal, a second electrical switch including a second input for a second switching signal, and third and fourth terminals, the third terminal and the fourth terminal form a component terminal for the light-emitting component, a first current path may be switched to be conducting by the first switch, the first current path includes the component terminal, a second current path may be switched to be conducting by the second switch, and the second current path is in parallel with the component terminal.

Abstract: A device having a reinforcement layer and a method for producing a device are disclosed. In an embodiment a device includes a carrier plate, an electronic component, a shaped body and a reinforcement layer, wherein the electronic component is laterally enclosed by the shaped body, wherein, in a vertical direction, the electronic component is arranged between the carrier plate and the reinforcement layer, wherein the shaped body has a thermal expansion coefficient which is at least three times as large as a thermal expansion coefficient of the carrier plate and at least three times as large as a thermal expansion coefficient of the reinforcement layer, and wherein the carrier plate and the reinforcement layer adjoin the shaped body at least in places and are configured to reduce deformation of the shaped body in an event of temperature fluctuations.

Abstract: The invention relates to an assembly comprising an electric component. The component has an electric part, a control circuit, and a capacitor. At least two lead frames are provided which are embedded into a housing. The part, the control circuit, and the capacitor are arranged on the lead frames, and the control circuit is designed to charge the capacitor and to supply the part with current from the capacitor in a clocked manner. The component has two contacts, and the component is arranged on a support. The support has an electrically conductive layer and the two contacts are connected to the layer in an electrically conductive manner. At least one first part of one lead frame is arranged at a greater distance from the electrically conductive layer than the second lead frame.