Patents by Inventor Andreas Zankl
Andreas Zankl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11380612Abstract: In an embodiment, a semiconductor device includes a galvanically isolated signal transfer coupler having a contact pad. The contact pad includes a metallic base layer, a metallic diffusion barrier layer arranged on the metallic base layer, and a metallic wire bondable layer arranged on the metallic diffusion barrier layer. The metallic diffusion barrier layer includes a first portion and a second portion. The first portion has a first surface and a second surface opposing the first surface. The first surface has a curved surface at the periphery. The first portion extends in a transverse plane and has a width. The second portion protrudes from the second surface intermediate the width of the first portion.Type: GrantFiled: December 11, 2017Date of Patent: July 5, 2022Assignee: Infineon Technologies Austria AGInventors: Matthias Stecher, Martin Kotzbauer, Julie Mathilde Suzanne Paye, Andreas Zankl
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Patent number: 10090192Abstract: A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.Type: GrantFiled: November 9, 2015Date of Patent: October 2, 2018Assignee: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Matthias Stecher, Markus Menath, Andreas Zankl, Anja Reitmeier
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Publication number: 20180166375Abstract: In an embodiment, a semiconductor device includes a galvanically isolated signal transfer coupler having a contact pad. The contact pad includes a metallic base layer, a metallic diffusion barrier layer arranged on the metallic base layer, and a metallic wire bondable layer arranged on the metallic diffusion barrier layer. The metallic diffusion barrier layer includes a first portion and a second portion. The first portion has a first surface and a second surface opposing the first surface. The first surface has a curved surface at the periphery. The first portion extends in a transverse plane and has a width. The second portion protrudes from the second surface intermediate the width of the first portion.Type: ApplicationFiled: December 11, 2017Publication date: June 14, 2018Inventors: Matthias Stecher, Martin Kotzbauer, Julie Mathilde Suzanne Paye, Andreas Zankl
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Patent number: 9598277Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.Type: GrantFiled: August 21, 2015Date of Patent: March 21, 2017Assignee: Infineon Technologies AGInventors: Bernhard Winkler, Andreas Zankl, Klemens Pruegl, Stefan Kolb
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Publication number: 20160064273Abstract: A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.Type: ApplicationFiled: November 9, 2015Publication date: March 3, 2016Inventors: Matthias Stecher, Markus Menath, Andreas Zankl, Anja Gissibl
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Patent number: 9214424Abstract: A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.Type: GrantFiled: April 20, 2012Date of Patent: December 15, 2015Assignee: Infineon Technologies Austria AGInventors: Matthias Stecher, Markus Menath, Andreas Zankl, Anja Gisslbl
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Publication number: 20150353344Abstract: Embodiments relate to MEMS devices and methods for manufacturing MEMS devices. In one embodiment, the manufacturing includes forming a monocrystalline sacrificial layer on a non-silicon-on-insulator (non-SOI) substrate, patterning the monocrystalline sacrificial layer such that the monocrystalline sacrificial layer remains in a first portion and is removed in a second portion lateral to the first portion; depositing a first silicon layer, the first silicon layer deposited on the remaining monocrystalline sacrificial layer and further lateral to the first portion; removing at least a portion of the monocrystalline sacrificial layer via at least one release aperture in the first silicon layer to form a cavity and sealing the cavity.Type: ApplicationFiled: August 21, 2015Publication date: December 10, 2015Inventors: Bernhard Winkler, Andreas Zankl, Klemens Pruegl, Stefan Kolb
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Patent number: 9145292Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.Type: GrantFiled: May 19, 2014Date of Patent: September 29, 2015Assignee: Infineon Technologies AGInventors: Bernhard Winkler, Andreas Zankl, Klemens Pruegl, Stefan Kolb
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Publication number: 20140252422Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.Type: ApplicationFiled: May 19, 2014Publication date: September 11, 2014Inventors: Bernhard Winkler, Andreas Zankl, Klemens Pruegl, Stefan Kolb
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Patent number: 8665054Abstract: A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.Type: GrantFiled: April 20, 2012Date of Patent: March 4, 2014Assignee: Infineon Technologies Austria AGInventors: Matthias Stecher, Markus Menath, Andreas Zankl, Werner Robl
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Publication number: 20130280879Abstract: A method for producing a rounded conductor line of a semiconductor component is disclosed. In that method, a partially completed semiconductor component is provided. The partially completed semiconductor component has a bottom side and a top side spaced distant from the bottom side in a vertical direction. Also provided is an etchant. On the top side, a dielectric layer is arranged. The dielectric layer has at least two different regions that show different etch rates when they are etched with the etchant. Subsequently, a trench is formed in the dielectric layer such that the trench intersects each of the different regions. Then, the trench is widened by etching the trench with the etchant at different etch rates. By filling the widened trench with an electrically conductive material, a conductor line is formed.Type: ApplicationFiled: April 20, 2012Publication date: October 24, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Matthias Stecher, Markus Menath, Andreas Zankl, Anja Gissibl
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Publication number: 20130278372Abstract: A semiconductor component has integrated a coreless transformer with a first connection contact, a second connection contact, an electrically conductive spiral first coil, an electrically conductive first ring, and an electrically conductive second ring. The electrically conductive spiral first coil is electrically connected between the first connection contact and the second connection contact. The electrically conductive first ring surrounds the first coil and one or both of the first connection contact and the second connection contact. The electrically conductive second ring is arranged between the first coil and the first ring, electrically connected to the first coil, and surrounds the first coil and one or both of the first connection contact and the second connection contact.Type: ApplicationFiled: April 20, 2012Publication date: October 24, 2013Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Matthias Stecher, Markus Menath, Andreas Zankl, Werner Robl
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Publication number: 20120211805Abstract: Embodiments relate to MEMS devices, particularly MEMS devices integrated with related electrical devices on a single wafer. Embodiments utilize a modular process flow concept as part of a MEMS-first approach, enabling use of a novel cavity sealing process. The impact and potential detrimental effects on the electrical devices by the MEMS processing are thereby reduced or eliminated. At the same time, a highly flexible solution is provided that enables implementation of a variety of measurement principles, including capacitive and piezoresistive. A variety of sensor applications can therefore be addressed with improved performance and quality while remaining cost-effective.Type: ApplicationFiled: February 22, 2011Publication date: August 23, 2012Inventors: Bernhard Winkler, Andreas Zankl, Klemens Pruegl, Stefan Kolb