Abstract: The present invention provides a formulation that includes a therapeutically effective amount of ephedrine or a pharmaceutically acceptable salt thereof, and a method for preparing the formulation. In some embodiments, the formulation includes a tonicity agent, a citrate buffer, water, and has a pH of about 5.2-5.4. The formulation of the invention is stable and ready-to-administer.

Abstract: A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R1)mTa(NR22)2(?NR3) (I): wherein: R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

Abstract: Disclosed are methods for forming a metal-containing layer on a substrate. The methods include providing a vapor and at least one reaction gas and reacting the vapor and the reaction gas with the substrate by a deposition process. The vapor may be selected from the group consisting of (Cp)V(?NtBu)(NEt2)2; (Cp)V(?NtBu)(NMe2)2; (Cp)V(?NtBu)(NEtMe)2; (Cp)V(?NiPr)(NEt2)2; (Cp)V(?NiPr)(NMe2)2; (Cp)V(?NiPr)(NEtMe)2; (Cp)V(?NC5H11)(NEt2)2; (Cp)V(?NC5H11)(NMe2)2; (Cp)V(?NC5H11)(NEtMe)2; (Cp)Nb(?NtBu)(NEt2)2; (Cp)Nb(?NtBu)(NMe2)2; (Cp)Nb(?NtBu)(NEtMe)2; (Cp)Nb(?NiPr)(NEt2)2; (Cp)Nb(?NiPr)(NMe2)2; (Cp)Nb(?NiPr)(NEtMe)2; (Cp)Nb(?NC5H11)(NEt2)2; (Cp)Nb(?NC5H11)(NMe2)2; and (Cp)Nb(?NC5H11)(NEtMe)2.

Abstract: Methods of forming titanium-containing layers on substrates are disclosed. In the disclosed methods, the vapor of a precursor compound having the formula Ti(Me5Cp)(OR)3, wherein R is selected from methyl, ethyl, or isopropyl is provided. The vapor is reacted with the substrate according to an atomic layer deposition process to form a titanium-containing complex on the surface of the substrate.

Abstract: Disclosed are GeX2Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5?n?2. These molecules have lower melting points and/or increased volatility compared to GeCl2-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.

Abstract: Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt2)2; (Cp)V(=NtBu)(NMe2)2; (Cp)V(=NtBu)(NEtMe)2; (Cp)V(?NiPr)(NEt2)2; (Cp)V(?NiPr)(NMe2)2; (Cp)V(?NiPr)(NEtMe)2; (Cp)V(?NC5H11)(NEt2)2; (Cp)V(?NC5H11)(NMe2)2; (Cp)V(?NC5H11)(NEtMe)2; (Cp)Nb(=NtBu)(NEt2)2; (Cp)Nb(=NtBu)(NMe2)2; (Cp)Nb(=NtBu)(NEtMe)2; (Cp)Nb(?NiPr)(NEt2)2; (Cp)Nb(?NiPr)(NMe2)2; (Cp)Nb(?NiPr)(NEtMe)2; (Cp)Nb(?NC5H11)(NEt2)2; (Cp)Nb(?NC5H11)(NMe2)2; and (Cp)Nb(?NC5H11)(NEtMe)2 is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate.

Abstract: Disclosed are GeX2Ln molecules, with X being a halide, L being an adduct other than C4H8O2, and 0.5?n?2. These molecules have lower melting points and/or increased volatility compared to GeCl2-dioxane. Also disclosed is the use of such molecules for deposition of thin films, such as chalcogenide, SiGe, and GeO2 films.

Abstract: A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me5Cp)(OR)3 (I), wherein R is selected in the group consisting in methyl, ethyl, isopropyl; or of the formula Ti(R1Cp)(OR2)3 (II), wherein R1 is selected from the group consisting in H, methyl, ethyl, isopropyl and R2 is independently selected from the group consisting in methyl, ethyl, isopropyl or tert-butyl; b) reacting the vapor comprising the at least one compound of formula (I) or (II) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

Abstract: A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Cp(R1)mTa(NR22)2(?NR3) (I): wherein: R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atoms; b) reacting the vapor comprising the at least one compound of formula (I) with the substrate, according to an atomic layer deposition process, to form a layer of a tantalum-containing complex on at least one surface of said substrate.

Abstract: Compound of the formula Cp(R1)mM(NR22)2(?NR3) (I): Wherein: M is a metal independently selected from Vanadium (V) or Niobium (Nb) and m?5; R1 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R2 is an organic ligand, each one independently selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom; R3 is an organic ligand selected in the group consisting of H, linear or branched hydrocarbyl radical comprising from 1 to 6 carbon atom.